MD719G2 - Procedeu de preparare a structurilor comutatoare cu caracteristica 1-V de tip S - Google Patents
Procedeu de preparare a structurilor comutatoare cu caracteristica 1-V de tip S Download PDFInfo
- Publication number
- MD719G2 MD719G2 MD94-0256A MD940256A MD719G2 MD 719 G2 MD719 G2 MD 719G2 MD 940256 A MD940256 A MD 940256A MD 719 G2 MD719 G2 MD 719G2
- Authority
- MD
- Moldova
- Prior art keywords
- figurative
- volt
- switching structure
- ampere characteristic
- transition
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 230000007704 transition Effects 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
Landscapes
- Micromachines (AREA)
- Contacts (AREA)
Abstract
Invenţia se referă la tehnologia semiconductorilor şi poate fi utilizată la prepararea structurilor comutatoare cu caracteristica curent-tensiune de tip S.În procedeul propus de preparare a structurii comutatoare cu caracteristica curent-tensiune de tip S pe bază de siliciu, care include formarea unei joncţiuni anizotipice p+-n şi a unei joncţiuni izotipice n-n+, noutatea constă în aceea că joncţiunea izotipică n-n+ pe suprafaţa de siliciu se prepară prin depunerea în aer a unui strat de In2O3:SnO2 cu grosimea de 0,3 mm.Rezultatul tehnic al invenţiei constă în formarea barierei de potenţial fotosensibile în joncţiunea izotipică n-n+ care la o polarizare inversă este caracterizată prin mecanismul-tunel de trecere a curentului.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD94-0256A MD719G2 (ro) | 1994-07-22 | 1994-07-22 | Procedeu de preparare a structurilor comutatoare cu caracteristica 1-V de tip S |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD94-0256A MD719G2 (ro) | 1994-07-22 | 1994-07-22 | Procedeu de preparare a structurilor comutatoare cu caracteristica 1-V de tip S |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD719F2 MD719F2 (ro) | 1997-04-30 |
| MD719G2 true MD719G2 (ro) | 1997-12-31 |
Family
ID=19738567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MD94-0256A MD719G2 (ro) | 1994-07-22 | 1994-07-22 | Procedeu de preparare a structurilor comutatoare cu caracteristica 1-V de tip S |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD719G2 (ro) |
-
1994
- 1994-07-22 MD MD94-0256A patent/MD719G2/ro active IP Right Grant
Non-Patent Citations (2)
| Title |
|---|
| "Диоды и тиристоры", под общей редакцией А.А. Чернышева, 1980 г., изд-во "Энергия", М., с. 126. * |
| И.М. Викулин, В.И. Стафеев, "Физика полупроводниковых приборов", 1980 г., изд-во "Советское радио", М., с. 296. * |
Also Published As
| Publication number | Publication date |
|---|---|
| MD719F2 (ro) | 1997-04-30 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| TW350135B (en) | Semiconductor device and method of manufacturing the same the invention relates to a semiconductor device and method of manufacturing the same | |
| TW363276B (en) | Thin-film semiconductor device, thin-film transistor and method for fabricating the same | |
| EP0342796A3 (en) | Thin-film transistor | |
| FR2738394B1 (fr) | Dispositif a semi-conducteur en carbure de silicium, et son procede de fabrication | |
| CA2052970A1 (en) | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same | |
| TW283263B (en) | Fabrication method of semiconductor device and field effect transistor | |
| DE69635824D1 (de) | Graben-dmos-transistor mit vergrabener schicht für verminderten anschaltwiderstand und verbesserter robustheit | |
| GB2343197B (en) | Method of forming silicon oxide layer and method of manufacturing thin film transistor thereby | |
| DE3574080D1 (en) | Silicon semiconductor substrate with an insulating layer embedded therein and method for forming the same | |
| EP0827208A3 (en) | Hydrogen-terminated diamond misfet and its manufacturing method | |
| EP0845803A4 (en) | SiC ELEMENT AND PROCESS FOR ITS PRODUCTION | |
| FR2725074B1 (fr) | Procede de fabrication d'une structure comportant une couche mince semi-conductrice sur un substrat | |
| CA2084174A1 (en) | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing thesame | |
| CA2054795A1 (en) | Superconducting device having an extremely thin superconducting channel formed of oxide superconductor material and method for manufacturing the same | |
| TW370677B (en) | Semiconductor memory device and manufacturing method | |
| MD719G2 (ro) | Procedeu de preparare a structurilor comutatoare cu caracteristica 1-V de tip S | |
| DK0869156T3 (da) | Fotokatalytisk fremgangsmåde til at gøre en overflade hydrofil, og kompositmateriale med en fotokatalytisk hydrofil overflade | |
| EP0997996A3 (en) | Semiconductor device and method for fabricating the same | |
| DE69416462D1 (de) | Schichtstruktur mit isolierender Dünnschicht und Oxydsupraleiter-Dünnschicht | |
| JPS6418278A (en) | Mis structure photosensor | |
| CA2051048A1 (en) | Superconducting device having a reduced thickness of oxide superconducting layer and method for manufacturing the same | |
| TW331656B (en) | The produce of wafer and its devices | |
| AU2143895A (en) | Method of manufacturing an electrical resistance heating means | |
| KR950034766A (ko) | 절연게이트형 전계효과 트랜지스터와 그 제법 | |
| JPS56125881A (en) | Optical semiconductor element |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG3A | Granted patent for invention | ||
| IF99 | Valid patent on 19990615 |
Free format text: EXPIRES: 20140722 |