MD719F2 - Manufacturing method for the switching structure with S- figurative volt-ampere characteristic. - Google Patents
Manufacturing method for the switching structure with S- figurative volt-ampere characteristic.Info
- Publication number
- MD719F2 MD719F2 MD940256A MD940256A MD719F2 MD 719 F2 MD719 F2 MD 719F2 MD 940256 A MD940256 A MD 940256A MD 940256 A MD940256 A MD 940256A MD 719 F2 MD719 F2 MD 719F2
- Authority
- MD
- Moldova
- Prior art keywords
- figurative
- volt
- switching structure
- ampere characteristic
- transition
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title abstract 3
- 230000007704 transition Effects 0.000 abstract 4
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 2
- 229910052710 silicon Inorganic materials 0.000 abstract 2
- 239000010703 silicon Substances 0.000 abstract 2
- XOLBLPGZBRYERU-UHFFFAOYSA-N tin dioxide Chemical compound O=[Sn]=O XOLBLPGZBRYERU-UHFFFAOYSA-N 0.000 abstract 2
- 238000006073 displacement reaction Methods 0.000 abstract 1
- 238000005036 potential barrier Methods 0.000 abstract 1
Landscapes
- Contacts (AREA)
- Micromachines (AREA)
Abstract
The invention relates to the semiconducting technology and may be applied for the switching structure fabrication with S- figurative volt- ampere characteristic. The novelty of the proposed manufacturing method for the silicon switching structure with S- figurative volt - ampere characteristic, including the anisotype transition p+-n and isotype transition n-n+ forming, is the isotype transition forming on the silicon surface by the In2 O3: SnO2 layer application in the air flow, its thickness being of 0,3 (miu)m. The technical result of the invention consists in the creation of a photo= sen- sitive potential barrier in the isotype transition n-n+, which at reverse displacements is characterized by a tunnel current transiting mechanism. Claims: 1
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD94-0256A MD719G2 (en) | 1994-07-22 | 1994-07-22 | Manufacturing method for the switching structure with S-figurative volt-ampere characteristic |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MD94-0256A MD719G2 (en) | 1994-07-22 | 1994-07-22 | Manufacturing method for the switching structure with S-figurative volt-ampere characteristic |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD719F2 true MD719F2 (en) | 1997-04-30 |
| MD719G2 MD719G2 (en) | 1997-12-31 |
Family
ID=19738567
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MD94-0256A MD719G2 (en) | 1994-07-22 | 1994-07-22 | Manufacturing method for the switching structure with S-figurative volt-ampere characteristic |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD719G2 (en) |
-
1994
- 1994-07-22 MD MD94-0256A patent/MD719G2/en active IP Right Grant
Also Published As
| Publication number | Publication date |
|---|---|
| MD719G2 (en) | 1997-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG3A | Granted patent for invention | ||
| IF99 | Valid patent on 19990615 |
Free format text: EXPIRES: 20140722 |