MD499F2 - Process of epitaxial layer grouing AIIIBV in chloride system - Google Patents

Process of epitaxial layer grouing AIIIBV in chloride system

Info

Publication number
MD499F2
MD499F2 MD940008A MD940008A MD499F2 MD 499 F2 MD499 F2 MD 499F2 MD 940008 A MD940008 A MD 940008A MD 940008 A MD940008 A MD 940008A MD 499 F2 MD499 F2 MD 499F2
Authority
MD
Moldova
Prior art keywords
grouing
aiiibv
epitaxial layer
chloride system
straturilor
Prior art date
Application number
MD940008A
Other languages
Romanian (ro)
Other versions
MD499G2 (en
MD940008A (en
Inventor
Vasile Botnariuc
Leonid Gorceac
Valentin Plesca
Semion Raevschi
Alexei SIMASCHEVICI
Original Assignee
Univ De Stat Din Moldova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Univ De Stat Din Moldova filed Critical Univ De Stat Din Moldova
Priority to MD94-0008A priority Critical patent/MD499G2/en
Publication of MD940008A publication Critical patent/MD940008A/en
Publication of MD499F2 publication Critical patent/MD499F2/en
Publication of MD499G2 publication Critical patent/MD499G2/en

Links

Landscapes

  • Semiconductor Memories (AREA)
  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Crystals, And After-Treatments Of Crystals (AREA)

Abstract

Inventia se refera la tehnologia semiconductorilor si poate fi utilizata pentru obtinerea straturilor epitaxiale de fosfura de indiu crescuta prin procedeul de cloruri cu parametri electrofi Ameliorarea calitatii si sporirea reproductibilitatii parametrilor electrofizici in cadrul procedeului de crestere a straturilor epitaxiale AlllBV in sistem de cloruri, ce include pregatirea
MD94-0008A 1993-12-30 1993-12-30 Process of epitaxial layer grouing AIII BV in chloride system MD499G2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MD94-0008A MD499G2 (en) 1993-12-30 1993-12-30 Process of epitaxial layer grouing AIII BV in chloride system

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD94-0008A MD499G2 (en) 1993-12-30 1993-12-30 Process of epitaxial layer grouing AIII BV in chloride system

Publications (3)

Publication Number Publication Date
MD940008A MD940008A (en) 1995-06-30
MD499F2 true MD499F2 (en) 1996-10-31
MD499G2 MD499G2 (en) 1997-05-31

Family

ID=19738514

Family Applications (1)

Application Number Title Priority Date Filing Date
MD94-0008A MD499G2 (en) 1993-12-30 1993-12-30 Process of epitaxial layer grouing AIII BV in chloride system

Country Status (1)

Country Link
MD (1) MD499G2 (en)

Families Citing this family (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD151Z (en) * 2008-12-30 2010-09-30 Государственный Университет Молд0 Process for growth of GaAs epitaxial layers into a horizontal reactor
MD972Z (en) * 2015-02-19 2016-06-30 Государственный Университет Молд0 Method for p+InP-p-InP-n+CdS structure growth for photovoltaic cells

Also Published As

Publication number Publication date
MD499G2 (en) 1997-05-31
MD940008A (en) 1995-06-30

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Legal Events

Date Code Title Description
MM3A Patent for invention definitely lapsed