MD4686B1 - Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice - Google Patents
Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice Download PDFInfo
- Publication number
- MD4686B1 MD4686B1 MDA20180109A MD20180109A MD4686B1 MD 4686 B1 MD4686 B1 MD 4686B1 MD A20180109 A MDA20180109 A MD A20180109A MD 20180109 A MD20180109 A MD 20180109A MD 4686 B1 MD4686 B1 MD 4686B1
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- MD
- Moldova
- Prior art keywords
- inp
- cds
- layer
- platelet
- deposited
- Prior art date
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- Y—GENERAL TAGGING OF NEW TECHNOLOGICAL DEVELOPMENTS; GENERAL TAGGING OF CROSS-SECTIONAL TECHNOLOGIES SPANNING OVER SEVERAL SECTIONS OF THE IPC; TECHNICAL SUBJECTS COVERED BY FORMER USPC CROSS-REFERENCE ART COLLECTIONS [XRACs] AND DIGESTS
- Y02—TECHNOLOGIES OR APPLICATIONS FOR MITIGATION OR ADAPTATION AGAINST CLIMATE CHANGE
- Y02E—REDUCTION OF GREENHOUSE GAS [GHG] EMISSIONS, RELATED TO ENERGY GENERATION, TRANSMISSION OR DISTRIBUTION
- Y02E10/00—Energy generation through renewable energy sources
- Y02E10/50—Photovoltaic [PV] energy
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- Physical Vapour Deposition (AREA)
- Photovoltaic Devices (AREA)
Abstract
Invenţia se referă la tehnologia semiconductoarelor şi poate fi utilizată, în special, în dispozitive de conversie a radiaţiei solare în energie electrică.Procedeul de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice constă în aceea că se creşte stratul de p-InP pe un substrat, executat în formă de plachetă de p+InP cu orientarea cristalografică (100), dezorientarea de 3…5° în direcţia (110) şi concentraţia purtătorilor de sarcină de 1018 cm-3, se depune, pe partea frontală a plachetei, prin metoda volumului cvasi închis stratul de n+CdS, se depune pe partea posterioară a plachetei un contact ohmic din Ag+5%Zn, se tratează termic la temperatura de 450°C, se depune un contact ohmic din In pe stratul de n+CdS, se tratează termic la temperatura de 250°C, şi se depune prin metoda evaporării cu fasciculul de electroni, la temperatura de 300°C, un strat antireflector de SiO2.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20180109A MD4686C1 (ro) | 2018-12-15 | 2018-12-15 | Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20180109A MD4686C1 (ro) | 2018-12-15 | 2018-12-15 | Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD4686B1 true MD4686B1 (ro) | 2020-03-31 |
| MD4686C1 MD4686C1 (ro) | 2020-12-31 |
Family
ID=70056179
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20180109A MD4686C1 (ro) | 2018-12-15 | 2018-12-15 | Procedeu de creştere a structurii p+InP-p-InP-n+CdS pentru celule fotovoltaice |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD4686C1 (ro) |
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2018
- 2018-12-15 MD MDA20180109A patent/MD4686C1/ro not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| MD4686C1 (ro) | 2020-12-31 |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |