MD3548G2 - Фоточувствительный элемент фотодетектора - Google Patents
Фоточувствительный элемент фотодетектора Download PDFInfo
- Publication number
- MD3548G2 MD3548G2 MDA20070120A MD20070120A MD3548G2 MD 3548 G2 MD3548 G2 MD 3548G2 MD A20070120 A MDA20070120 A MD A20070120A MD 20070120 A MD20070120 A MD 20070120A MD 3548 G2 MD3548 G2 MD 3548G2
- Authority
- MD
- Moldova
- Prior art keywords
- photosensitive
- photosensitive cell
- photodetector
- contact layer
- registration
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 abstract 2
- ATJFFYVFTNAWJD-UHFFFAOYSA-N Tin Chemical compound [Sn] ATJFFYVFTNAWJD-UHFFFAOYSA-N 0.000 abstract 1
- 239000011521 glass Substances 0.000 abstract 1
- 230000035945 sensitivity Effects 0.000 abstract 1
- 239000000758 substrate Substances 0.000 abstract 1
Landscapes
- Light Receiving Elements (AREA)
Abstract
Изобретение относится к области фотоники, а именно к установкам для регистрации фотонов, в частности к фоточувствительным элементам фотоприемников на основе полупроводников.Фоточувствительный элемент фотодетектора содержит подложку из стекла (1), на которую нанесены контактный слой (2), фоточувствительный полупроводниковый слой (3) из триселенида мышьяка (As2Se3) легированный оловом (Sn) с концентрацией в пределах 3,0...5,0% ат., и второй контактный слой (4).Результат состоит в том, что фоточувствительный элемент разрешает более точную регистрацию фотонов, обладает высокой фотоэлектрической чувствительностью и вместительной фотоэлектрической памятью.
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20070120A MD3548G2 (ru) | 2007-04-27 | 2007-04-27 | Фоточувствительный элемент фотодетектора |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| MDA20070120A MD3548G2 (ru) | 2007-04-27 | 2007-04-27 | Фоточувствительный элемент фотодетектора |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| MD3548F1 MD3548F1 (en) | 2008-03-31 |
| MD3548G2 true MD3548G2 (ru) | 2008-10-31 |
Family
ID=39271509
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| MDA20070120A MD3548G2 (ru) | 2007-04-27 | 2007-04-27 | Фоточувствительный элемент фотодетектора |
Country Status (1)
| Country | Link |
|---|---|
| MD (1) | MD3548G2 (ru) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD341Z (ru) * | 2010-07-30 | 2011-09-30 | Институт Прикладной Физики Академии Наук Молдовы | Способ изготовления рельефных голографических дифракционных решеток |
Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD1459C2 (ru) * | 1987-06-23 | 2001-02-28 | Biroul Specializat De Constructie Si Tehnologie A Electronicii Corpului Solid Al Institutului De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova | Фотоприемник |
| MD1676G2 (ru) * | 1999-07-21 | 2001-12-31 | Институт Прикладной Физики Академии Наук Молдовы | Фотоприемник |
-
2007
- 2007-04-27 MD MDA20070120A patent/MD3548G2/ru not_active IP Right Cessation
Patent Citations (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD1459C2 (ru) * | 1987-06-23 | 2001-02-28 | Biroul Specializat De Constructie Si Tehnologie A Electronicii Corpului Solid Al Institutului De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova | Фотоприемник |
| MD1676G2 (ru) * | 1999-07-21 | 2001-12-31 | Институт Прикладной Физики Академии Наук Молдовы | Фотоприемник |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| MD341Z (ru) * | 2010-07-30 | 2011-09-30 | Институт Прикладной Физики Академии Наук Молдовы | Способ изготовления рельефных голографических дифракционных решеток |
Also Published As
| Publication number | Publication date |
|---|---|
| MD3548F1 (en) | 2008-03-31 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| Li et al. | Flexible and air‐stable near‐infrared sensors based on solution‐processed inorganic–organic hybrid phototransistors | |
| Lan et al. | Electrically switchable color-selective organic photodetectors for full-color imaging | |
| Yu et al. | High-performance visible-blind ultraviolet photodetector based on IGZO TFT coupled with p–n heterojunction | |
| Shin et al. | Si–MoS2 vertical heterojunction for a photodetector with high responsivity and low noise equivalent power | |
| Riede et al. | Efficient organic tandem solar cells based on small molecules | |
| Zheng et al. | Scalable-production, self-powered TiO2 nanowell–organic hybrid UV photodetectors with tunable performances | |
| Chowdhury et al. | Self-powered, broad band, and ultrafast InGaN-based photodetector | |
| Zeng et al. | MoS2/WSe2 vdW heterostructures decorated with PbS quantum dots for the development of high-performance photovoltaic and broadband photodiodes | |
| Ortega et al. | Optoelectronic properties of CdO/Si photodetectors | |
| Wang et al. | Optimizing performance of silicon-based p–n junction photodetectors by the piezo-phototronic effect | |
| Kwon et al. | Inhibition of ion migration for reliable operation of organolead halide perovskite‐based Metal/Semiconductor/Metal broadband photodetectors | |
| Yang et al. | Semi-transparent ZnO-CuI/CuSCN photodiode detector with narrow-band UV photoresponse | |
| Reinhardt et al. | Identifying the impact of surface recombination at electrodes in organic solar cells by means of electroluminescence and modeling | |
| Angmo et al. | Over 2 years of outdoor operational and storage stability of ITO‐free, fully roll‐to‐roll fabricated polymer solar cell modules | |
| WO2008093834A1 (ja) | 固体撮像装置およびその製造方法 | |
| CN106449861B (zh) | 光传感器元件和光电转换装置 | |
| KR20120087946A (ko) | 분극 저항성 태양 전지 | |
| Zafar et al. | A MEHPPV/VOPcPhO composite based diode as a photodetector | |
| Zhang et al. | High-performance and stable colloidal quantum dots imager via energy band engineering | |
| Cong et al. | Graphene/Si heterostructure with an organic interfacial layer for a self-powered photodetector with a high ON/OFF ratio | |
| Mukhokosi et al. | An extrinsic approach toward achieving fast response and self‐powered photodetector | |
| Kim et al. | Highly transparent bidirectional transparent photovoltaics for on-site power generators | |
| Kim et al. | Al2O3-induced sub-gap doping on the IGZO channel for the detection of infrared light | |
| Ghosh et al. | Self-powered ultraviolet–visible transparent photodetector based on Mo-doped BiVO4 thin films | |
| EP0955680A4 (en) | P-TYPE SEMICONDUCTOR, METHOD FOR THE PRODUCTION THEREOF, SEMICONDUCTOR ARRANGEMENT, PHOTOVOLTAIC COMPONENT, AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR ARRANGEMENT |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| FG4A | Patent for invention issued | ||
| KA4A | Patent for invention lapsed due to non-payment of fees (with right of restoration) | ||
| MM4A | Patent for invention definitely lapsed due to non-payment of fees |