MD3548G2 - Element fotosensibil al detectorului de fotoni - Google Patents

Element fotosensibil al detectorului de fotoni Download PDF

Info

Publication number
MD3548G2
MD3548G2 MDA20070120A MD20070120A MD3548G2 MD 3548 G2 MD3548 G2 MD 3548G2 MD A20070120 A MDA20070120 A MD A20070120A MD 20070120 A MD20070120 A MD 20070120A MD 3548 G2 MD3548 G2 MD 3548G2
Authority
MD
Moldova
Prior art keywords
photosensitive
photosensitive cell
photodetector
contact layer
registration
Prior art date
Application number
MDA20070120A
Other languages
English (en)
Russian (ru)
Other versions
MD3548F1 (ro
Inventor
Михаил ЙОВУ
Валериу ЧОРБЭ
Диана ХАРЯ
Эдуард КОЛОМЕЙКО
Ион ВАСИЛЬЕВ
Original Assignee
Институт Прикладной Физики Академии Наук Молдовы
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Институт Прикладной Физики Академии Наук Молдовы filed Critical Институт Прикладной Физики Академии Наук Молдовы
Priority to MDA20070120A priority Critical patent/MD3548G2/ro
Publication of MD3548F1 publication Critical patent/MD3548F1/ro
Publication of MD3548G2 publication Critical patent/MD3548G2/ro

Links

Landscapes

  • Light Receiving Elements (AREA)

Abstract

Invenţia se referă la domeniul fotonicii, şi anume la instalaţiile de detectare a fotonilor, în particular la elementele fotosensibile ale detectoarelor de fotoni în bază de semiconductori.Elementul fotosensibil al detectorului de fotoni conţine un substrat dielectric de sticlă (1), pe care sunt aplicate un substrat de contact (2), un substrat fotosensibil semiconductor (3) din triseleniură de arsen (As2Se3) dopat cu staniu (Sn) cu o concentraţie în limitele 3,0…5,0 % at. şi un al doilea substrat de contact (4).Rezultatul constă în aceea că elementul fotosensibil permite o detectare mai precisă a fotonilor, posedă sensibilitate fotoelectrică sporită şi o memorie fotoelectrică cu o capacitate înaltă.
MDA20070120A 2007-04-27 2007-04-27 Element fotosensibil al detectorului de fotoni MD3548G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20070120A MD3548G2 (ro) 2007-04-27 2007-04-27 Element fotosensibil al detectorului de fotoni

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20070120A MD3548G2 (ro) 2007-04-27 2007-04-27 Element fotosensibil al detectorului de fotoni

Publications (2)

Publication Number Publication Date
MD3548F1 MD3548F1 (ro) 2008-03-31
MD3548G2 true MD3548G2 (ro) 2008-10-31

Family

ID=39271509

Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20070120A MD3548G2 (ro) 2007-04-27 2007-04-27 Element fotosensibil al detectorului de fotoni

Country Status (1)

Country Link
MD (1) MD3548G2 (ro)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD341Z (ro) * 2010-07-30 2011-09-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de executare a reţelelor holografice de difracţie în relief

Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD1459C2 (ro) * 1987-06-23 2001-02-28 Biroul Specializat De Constructie Si Tehnologie A Electronicii Corpului Solid Al Institutului De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova Detector de fotoni
MD1676G2 (ro) * 1999-07-21 2001-12-31 Институт Прикладной Физики Академии Наук Молдовы Fotoreceptor

Patent Citations (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD1459C2 (ro) * 1987-06-23 2001-02-28 Biroul Specializat De Constructie Si Tehnologie A Electronicii Corpului Solid Al Institutului De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova Detector de fotoni
MD1676G2 (ro) * 1999-07-21 2001-12-31 Институт Прикладной Физики Академии Наук Молдовы Fotoreceptor

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD341Z (ro) * 2010-07-30 2011-09-30 Институт Прикладной Физики Академии Наук Молдовы Procedeu de executare a reţelelor holografice de difracţie în relief

Also Published As

Publication number Publication date
MD3548F1 (ro) 2008-03-31

Similar Documents

Publication Publication Date Title
Li et al. Flexible and air‐stable near‐infrared sensors based on solution‐processed inorganic–organic hybrid phototransistors
Lan et al. Electrically switchable color-selective organic photodetectors for full-color imaging
Yu et al. High-performance visible-blind ultraviolet photodetector based on IGZO TFT coupled with p–n heterojunction
Shin et al. Si–MoS2 vertical heterojunction for a photodetector with high responsivity and low noise equivalent power
Riede et al. Efficient organic tandem solar cells based on small molecules
Zheng et al. Scalable-production, self-powered TiO2 nanowell–organic hybrid UV photodetectors with tunable performances
Chowdhury et al. Self-powered, broad band, and ultrafast InGaN-based photodetector
Zeng et al. MoS2/WSe2 vdW heterostructures decorated with PbS quantum dots for the development of high-performance photovoltaic and broadband photodiodes
Ortega et al. Optoelectronic properties of CdO/Si photodetectors
Wang et al. Optimizing performance of silicon-based p–n junction photodetectors by the piezo-phototronic effect
Kwon et al. Inhibition of ion migration for reliable operation of organolead halide perovskite‐based Metal/Semiconductor/Metal broadband photodetectors
Yang et al. Semi-transparent ZnO-CuI/CuSCN photodiode detector with narrow-band UV photoresponse
Reinhardt et al. Identifying the impact of surface recombination at electrodes in organic solar cells by means of electroluminescence and modeling
Angmo et al. Over 2 years of outdoor operational and storage stability of ITO‐free, fully roll‐to‐roll fabricated polymer solar cell modules
WO2008093834A1 (ja) 固体撮像装置およびその製造方法
Yan et al. A spiro-MeOTAD/Ga2O3/Si pin junction featuring enhanced self-powered solar-blind sensing via balancing absorption of photons and separation of photogenerated carriers
CN106449861B (zh) 光传感器元件和光电转换装置
KR20120087946A (ko) 분극 저항성 태양 전지
Zafar et al. A MEHPPV/VOPcPhO composite based diode as a photodetector
Zhang et al. High-performance and stable colloidal quantum dots imager via energy band engineering
Cong et al. Graphene/Si heterostructure with an organic interfacial layer for a self-powered photodetector with a high ON/OFF ratio
Mukhokosi et al. An extrinsic approach toward achieving fast response and self‐powered photodetector
Kim et al. Highly transparent bidirectional transparent photovoltaics for on-site power generators
Kim et al. Al2O3-induced sub-gap doping on the IGZO channel for the detection of infrared light
EP0955680A4 (en) P-TYPE SEMICONDUCTOR, METHOD FOR THE PRODUCTION THEREOF, SEMICONDUCTOR ARRANGEMENT, PHOTOVOLTAIC COMPONENT, AND METHOD FOR THE PRODUCTION OF A SEMICONDUCTOR ARRANGEMENT

Legal Events

Date Code Title Description
FG4A Patent for invention issued
KA4A Patent for invention lapsed due to non-payment of fees (with right of restoration)
MM4A Patent for invention definitely lapsed due to non-payment of fees