MD1994G2 - Procedeu de formare a anizotropiei optice artificiale în cristale semiconductoare optic izotropice - Google Patents

Procedeu de formare a anizotropiei optice artificiale în cristale semiconductoare optic izotropice Download PDF

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Publication number
MD1994G2
MD1994G2 MDA20000119A MD20000119A MD1994G2 MD 1994 G2 MD1994 G2 MD 1994G2 MD A20000119 A MDA20000119 A MD A20000119A MD 20000119 A MD20000119 A MD 20000119A MD 1994 G2 MD1994 G2 MD 1994G2
Authority
MD
Moldova
Prior art keywords
optical
creation
semicondustors
crystals
artificial
Prior art date
Application number
MDA20000119A
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English (en)
Russian (ru)
Other versions
MD1994F2 (ro
MD20000119A (ro
Inventor
Ион ТИГИНЯНУ
Валериан ДОРОГАН
Григоре СУРУЧАНУ
Original Assignee
Ион ТИГИНЯНУ
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Ион ТИГИНЯНУ filed Critical Ион ТИГИНЯНУ
Priority to MDA20000119A priority Critical patent/MD1994G2/ro
Publication of MD20000119A publication Critical patent/MD20000119A/ro
Publication of MD1994F2 publication Critical patent/MD1994F2/ro
Publication of MD1994G2 publication Critical patent/MD1994G2/ro

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  • Crystals, And After-Treatments Of Crystals (AREA)
  • Liquid Deposition Of Substances Of Which Semiconductor Devices Are Composed (AREA)

Abstract

Invenţia se referă la tehnologia materialelor şi structurilor semiconductoare şi poate fi utilizată pentru confecţionarea elementelor optice neliniare.Procedeul include formarea unei regiuni texturate, implantarea a ionilor de înaltã energie sub un unghi de 30…90? în cristalul semiconductor optic izotropic şi dizolvarea electrochimică ulterioară a regiunii implantate.
MDA20000119A 2000-07-17 2000-07-17 Procedeu de formare a anizotropiei optice artificiale în cristale semiconductoare optic izotropice MD1994G2 (ro)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MDA20000119A MD1994G2 (ro) 2000-07-17 2000-07-17 Procedeu de formare a anizotropiei optice artificiale în cristale semiconductoare optic izotropice

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MDA20000119A MD1994G2 (ro) 2000-07-17 2000-07-17 Procedeu de formare a anizotropiei optice artificiale în cristale semiconductoare optic izotropice

Publications (3)

Publication Number Publication Date
MD20000119A MD20000119A (ro) 2002-07-31
MD1994F2 MD1994F2 (ro) 2002-08-31
MD1994G2 true MD1994G2 (ro) 2003-02-28

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Family Applications (1)

Application Number Title Priority Date Filing Date
MDA20000119A MD1994G2 (ro) 2000-07-17 2000-07-17 Procedeu de formare a anizotropiei optice artificiale în cristale semiconductoare optic izotropice

Country Status (1)

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MD (1) MD1994G2 (ro)

Non-Patent Citations (6)

* Cited by examiner, † Cited by third party
Title
Appl. Phys., V. 34, 1995, p. 177-178. *
J. S. Blakmore. Fizica corpului solid. Moscova, MIR, 1998, p. 57 *
Еijiro Kikuno, Marco Amiotti, Tshiyuki Takizawa and Shigehisa Arai. Anizotropic refractive index of porous InP fabricated by anodization of (111)A Surface. J. *
Еijiro Kikuno, Marco Amiotti, Tshiyuki Takizawa and Shigehisa Arai. Anizotropic refractive index of porous InP fabricated by anodization of (111)A Surface. J. Appl. Phys., V. 34, 1995, p. 177-178 *
Ж. Панков. Оптические процессы в полупроводниках. Москва, МИР, 1998, с. 57 *
С. А. Медведев. Введение в технологию полупроводниковых материалов, Москва, Высшая школа, 1970, с. 65-70, 451-473 *

Also Published As

Publication number Publication date
MD1994F2 (ro) 2002-08-31
MD20000119A (ro) 2002-07-31

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