MD1545C2 - Carrier for registration of optic images and holographic information - Google Patents

Carrier for registration of optic images and holographic information

Info

Publication number
MD1545C2
MD1545C2 MD99-0219A MD990219A MD1545C2 MD 1545 C2 MD1545 C2 MD 1545C2 MD 990219 A MD990219 A MD 990219A MD 1545 C2 MD1545 C2 MD 1545C2
Authority
MD
Moldova
Prior art keywords
thickness
layer
carrier
registration
electrode
Prior art date
Application number
MD99-0219A
Other languages
Romanian (ro)
Russian (ru)
Other versions
MD1545B1 (en
Inventor
Валериу БИВОЛ
Maria Iovu
Михай ЙОВУ
Elena Hancevschi
Ion Ciumacov
Original Assignee
Biroul Specializat De Constructie Si Tehnologie A Electronicii Corpului Solid Al Institutului De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by Biroul Specializat De Constructie Si Tehnologie A Electronicii Corpului Solid Al Institutului De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova filed Critical Biroul Specializat De Constructie Si Tehnologie A Electronicii Corpului Solid Al Institutului De Fizica Aplicata Al Academiei De Stiinte A Republicii Moldova
Priority to MD99-0219A priority Critical patent/MD1545C2/en
Publication of MD1545B1 publication Critical patent/MD1545B1/en
Publication of MD1545C2 publication Critical patent/MD1545C2/en

Links

Landscapes

  • Light Receiving Elements (AREA)
  • Holo Graphy (AREA)

Abstract

The invention relates to the silverless semi-conductive photography.The carrier consists of the dielectric support with subsequently situated thereon first electrode, photoinjective layer of P-type conductivity, chalcogenide vitreous semiconductor layer and the second electrode in which the photoinjection layer is made of ten interchangable semi-layer pairs, the lower one is manufactured of As2Se3 with a thickness of 8-10 nm and the upper one - of In2S3 with a thickness of 10-12 nm or In2Se3 with a thickness of 40-50 nm, the registration layer having a thickness of 0,2-0,5 µm, and the second electrode is manufactured of aluminium and has a thickness of 10-50 nm.The result consists in increasing the light sensibility of the information carrier.
MD99-0219A 1999-08-25 1999-08-25 Carrier for registration of optic images and holographic information MD1545C2 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
MD99-0219A MD1545C2 (en) 1999-08-25 1999-08-25 Carrier for registration of optic images and holographic information

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
MD99-0219A MD1545C2 (en) 1999-08-25 1999-08-25 Carrier for registration of optic images and holographic information

Publications (2)

Publication Number Publication Date
MD1545B1 MD1545B1 (en) 2000-09-30
MD1545C2 true MD1545C2 (en) 2001-04-30

Family

ID=19739458

Family Applications (1)

Application Number Title Priority Date Filing Date
MD99-0219A MD1545C2 (en) 1999-08-25 1999-08-25 Carrier for registration of optic images and holographic information

Country Status (1)

Country Link
MD (1) MD1545C2 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD313Z (en) * 2009-07-08 2011-08-31 Государственный Университет Молд0 Photothermoplastic medium for recording of optical information

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
MD313Z (en) * 2009-07-08 2011-08-31 Государственный Университет Молд0 Photothermoplastic medium for recording of optical information

Also Published As

Publication number Publication date
MD1545B1 (en) 2000-09-30

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