LU91987B1 - Method for manufacturing a semiconductor thin film - Google Patents
Method for manufacturing a semiconductor thin filmInfo
- Publication number
- LU91987B1 LU91987B1 LU91987A LU91987A LU91987B1 LU 91987 B1 LU91987 B1 LU 91987B1 LU 91987 A LU91987 A LU 91987A LU 91987 A LU91987 A LU 91987A LU 91987 B1 LU91987 B1 LU 91987B1
- Authority
- LU
- Luxembourg
- Prior art keywords
- manufacturing
- thin film
- semiconductor thin
- semiconductor
- film
- Prior art date
Links
- 238000004519 manufacturing process Methods 0.000 title 1
- 238000000034 method Methods 0.000 title 1
- 239000004065 semiconductor Substances 0.000 title 1
- 239000010409 thin film Substances 0.000 title 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02367—Substrates
- H01L21/0237—Materials
- H01L21/02422—Non-crystalline insulating materials, e.g. glass, polymers
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02436—Intermediate layers between substrates and deposited layers
- H01L21/02439—Materials
- H01L21/02491—Conductive materials
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02554—Oxides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/02557—Sulfides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02551—Group 12/16 materials
- H01L21/0256—Selenides
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02518—Deposited layers
- H01L21/02521—Materials
- H01L21/02568—Chalcogenide semiconducting materials not being oxides, e.g. ternary compounds
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02365—Forming inorganic semiconducting materials on a substrate
- H01L21/02656—Special treatments
- H01L21/02664—Aftertreatments
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L31/00—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
- H01L31/0248—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies
- H01L31/0256—Semiconductor devices sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by their semiconductor bodies characterised by the material
- H01L31/0264—Inorganic materials
- H01L31/032—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312
- H01L31/0326—Inorganic materials including, apart from doping materials or other impurities, only compounds not provided for in groups H01L31/0272 - H01L31/0312 comprising AIBIICIVDVI kesterite compounds, e.g. Cu2ZnSnSe4, Cu2ZnSnS4
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Physics & Mathematics (AREA)
- Power Engineering (AREA)
- Manufacturing & Machinery (AREA)
- Chemical & Material Sciences (AREA)
- Inorganic Chemistry (AREA)
- Electromagnetism (AREA)
- Materials Engineering (AREA)
- Photovoltaic Devices (AREA)
Priority Applications (2)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
LU91987A LU91987B1 (en) | 2012-04-26 | 2012-04-26 | Method for manufacturing a semiconductor thin film |
PCT/EP2013/058509 WO2013160356A1 (en) | 2012-04-26 | 2013-04-24 | Method for manufacturing a semiconductor thin film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
LU91987A LU91987B1 (en) | 2012-04-26 | 2012-04-26 | Method for manufacturing a semiconductor thin film |
Publications (1)
Publication Number | Publication Date |
---|---|
LU91987B1 true LU91987B1 (en) | 2013-10-28 |
Family
ID=48236908
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
LU91987A LU91987B1 (en) | 2012-04-26 | 2012-04-26 | Method for manufacturing a semiconductor thin film |
Country Status (2)
Country | Link |
---|---|
LU (1) | LU91987B1 (en) |
WO (1) | WO2013160356A1 (en) |
Families Citing this family (2)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US10079321B2 (en) * | 2016-06-30 | 2018-09-18 | International Business Machines Corporation | Technique for achieving large-grain Ag2ZnSn(S,Se)4thin films |
CN106960906B (en) * | 2017-02-24 | 2019-02-19 | 江苏理工学院 | A kind of Cu-Sn-Se nano phase change thin-film material and its preparation method and application |
-
2012
- 2012-04-26 LU LU91987A patent/LU91987B1/en active
-
2013
- 2013-04-24 WO PCT/EP2013/058509 patent/WO2013160356A1/en active Application Filing
Non-Patent Citations (6)
Title |
---|
BÃR M ET AL: "Impact of KCN etching on the chemical and electronic surface structure of CuZnSnSthin-film solar cell absorbers", APPLIED PHYSICS LETTERS, AIP, AMERICAN INSTITUTE OF PHYSICS, MELVILLE, NY, US, vol. 99, no. 15, 10 October 2011 (2011-10-10), pages 152111 - 152111, XP012152471, ISSN: 0003-6951, [retrieved on 20111013], DOI: 10.1063/1.3650717 * |
BJÖRN-ARVID SCHUBERT ET AL: "Cu2ZnSnS4 thin film solar cells by fast coevaporation", PROGRESS IN PHOTOVOLTAICS: RESEARCH AND APPLICATIONS, vol. 19, no. 1, 1 January 2011 (2011-01-01), pages 93 - 96, XP055001284, ISSN: 1062-7995, DOI: 10.1002/pip.976 * |
HIRONORI KATAGIRI ET AL: "Enhanced conversion efficiencies of Cu2ZnSnS4-based thin film solar cells by using preferential etching technique", APPLIED PHYSICS EXPRESS, THE JAPAN SOCIETY OF APPLIED PHYSICS, vol. 1, no. 4, 1 April 2008 (2008-04-01), pages 41201 - 1, XP001517129, ISSN: 1882-0778, DOI: 10.1143/APEX.1.041201 * |
PRASHANT K SARSWAT ET AL: "CZTS thin films on transparent conducting electrodes by electrochemical technique", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 520, no. 6, 21 July 2011 (2011-07-21), pages 1694 - 1697, XP028444220, ISSN: 0040-6090, [retrieved on 20110729], DOI: 10.1016/J.TSF.2011.07.052 * |
SCRAGG J J ET AL: "A 3.2% efficient Kesterite device from electrodeposited stacked elemental layers", JOURNAL OF ELECTROANALYTICAL CHEMISTRY, ELSEVIER, AMSTERDAM, NL, vol. 646, no. 1-2, 15 July 2010 (2010-07-15), pages 52 - 59, XP027141897, ISSN: 1572-6657, [retrieved on 20100118] * |
WANGPERAWONG A ET AL: "Aqueous bath process for deposition of CuZnSnSphotovoltaic absorbers", THIN SOLID FILMS, ELSEVIER-SEQUOIA S.A. LAUSANNE, CH, vol. 519, no. 8, 24 November 2010 (2010-11-24), pages 2488 - 2492, XP028132120, ISSN: 0040-6090, [retrieved on 20101204], DOI: 10.1016/J.TSF.2010.11.040 * |
Also Published As
Publication number | Publication date |
---|---|
WO2013160356A1 (en) | 2013-10-31 |
Similar Documents
Publication | Publication Date | Title |
---|---|---|
EP2840110A4 (en) | Method for manufacturing hard coating film | |
EP2793268A4 (en) | Method for manufacturing semiconductor device | |
LT2964417T (en) | Method for providing through-openings in a substrate | |
EP2749915A4 (en) | Method for manufacturing anti-glare film | |
EP2964416C0 (en) | Method for separating a substrate | |
EP2790209A4 (en) | Manufacturing method for semiconductor device | |
EP2782147A4 (en) | Method for manufacturing semiconductor light-emitting element | |
EP2978018A4 (en) | Method for manufacturing power-module substrate | |
EP2787543A4 (en) | Manufacturing method for light-emitting device | |
EP2966679A4 (en) | Method for manufacturing power-module substrate | |
TWI563540B (en) | Semiconductor device manufacturing method | |
EP2676991A4 (en) | Substrate film and method for manufacturing same | |
TWI560309B (en) | Film deposition method | |
EP2913843A4 (en) | Semiconductor device manufacturing method | |
EP2736067A4 (en) | Method for manufacturing semiconductor device | |
EP2790225A4 (en) | Method for manufacturing semiconductor device | |
SG11201402006SA (en) | Member for semiconductor manufacturing device | |
EP2897166A4 (en) | Method for manufacturing semiconductor device | |
SG11201406661YA (en) | Method for manufacturing bonded wafer | |
EP2787526A4 (en) | Semiconductor device fabrication method | |
SG11201502119TA (en) | Method for manufacturing soi wafer | |
EP2685488A4 (en) | Production method for semiconductor device | |
EP3041035A4 (en) | METHOD FOR MANUFACTURING PNbZT THIN FILM | |
EP2664792A4 (en) | Method for manufacturing thin film actuator | |
SG11201501873QA (en) | Method for manufacturing soi wafer |