LU79239A1 - N-CHANNEL MEMORY FET - Google Patents
N-CHANNEL MEMORY FETInfo
- Publication number
- LU79239A1 LU79239A1 LU79239A LU79239A LU79239A1 LU 79239 A1 LU79239 A1 LU 79239A1 LU 79239 A LU79239 A LU 79239A LU 79239 A LU79239 A LU 79239A LU 79239 A1 LU79239 A1 LU 79239A1
- Authority
- LU
- Luxembourg
- Prior art keywords
- channel memory
- memory fet
- fet
- channel
- memory
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
- H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
- H01L29/7881—Programmable transistors with only two possible levels of programmation
- H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
- H01L29/7885—Hot carrier injection from the channel
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/40—Electrodes ; Multistep manufacturing processes therefor
- H01L29/401—Multistep manufacturing processes
- H01L29/4011—Multistep manufacturing processes for data storage electrodes
- H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
- H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
- H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
- H01L29/76—Unipolar devices, e.g. field effect transistors
- H01L29/772—Field effect transistors
- H01L29/78—Field effect transistors with field effect produced by an insulated gate
Landscapes
- Engineering & Computer Science (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Ceramic Engineering (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Manufacturing & Machinery (AREA)
Applications Claiming Priority (3)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
DE19772744113 DE2744113A1 (en) | 1977-09-30 | 1977-09-30 | N-channel storage IGFET with floating gate - has between drain and source N-doped auxiliary region in series with channel followed by further channel region |
DE19772759040 DE2759040A1 (en) | 1977-12-30 | 1977-12-30 | Multi-channel storage FET - has floating storage gate surrounded by insulator and has control and selector gates |
DE19772758877 DE2758877A1 (en) | 1977-12-30 | 1977-12-30 | Multiple channel memory FET - is esp. for telephone circuit and has gate and control electrodes separated by thin oxide layers in insulating window |
Publications (1)
Publication Number | Publication Date |
---|---|
LU79239A1 true LU79239A1 (en) | 1978-06-28 |
Family
ID=27187336
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
LU79239A LU79239A1 (en) | 1977-09-30 | 1978-03-15 | N-CHANNEL MEMORY FET |
Country Status (1)
Country | Link |
---|---|
LU (1) | LU79239A1 (en) |
-
1978
- 1978-03-15 LU LU79239A patent/LU79239A1/en unknown
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