LU79239A1 - N-CHANNEL MEMORY FET - Google Patents

N-CHANNEL MEMORY FET

Info

Publication number
LU79239A1
LU79239A1 LU79239A LU79239A LU79239A1 LU 79239 A1 LU79239 A1 LU 79239A1 LU 79239 A LU79239 A LU 79239A LU 79239 A LU79239 A LU 79239A LU 79239 A1 LU79239 A1 LU 79239A1
Authority
LU
Luxembourg
Prior art keywords
channel memory
memory fet
fet
channel
memory
Prior art date
Application number
LU79239A
Other languages
German (de)
Inventor
B Roessler
K Hoffmann
Original Assignee
Siemens Ag
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Priority claimed from DE19772744113 external-priority patent/DE2744113A1/en
Priority claimed from DE19772759040 external-priority patent/DE2759040A1/en
Priority claimed from DE19772758877 external-priority patent/DE2758877A1/en
Application filed by Siemens Ag filed Critical Siemens Ag
Publication of LU79239A1 publication Critical patent/LU79239A1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/788—Field effect transistors with field effect produced by an insulated gate with floating gate
    • H01L29/7881—Programmable transistors with only two possible levels of programmation
    • H01L29/7884—Programmable transistors with only two possible levels of programmation charging by hot carrier injection
    • H01L29/7885—Hot carrier injection from the channel
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/40—Electrodes ; Multistep manufacturing processes therefor
    • H01L29/401—Multistep manufacturing processes
    • H01L29/4011—Multistep manufacturing processes for data storage electrodes
    • H01L29/40114—Multistep manufacturing processes for data storage electrodes the electrodes comprising a conductor-insulator-conductor-insulator-semiconductor structure
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
LU79239A 1977-09-30 1978-03-15 N-CHANNEL MEMORY FET LU79239A1 (en)

Applications Claiming Priority (3)

Application Number Priority Date Filing Date Title
DE19772744113 DE2744113A1 (en) 1977-09-30 1977-09-30 N-channel storage IGFET with floating gate - has between drain and source N-doped auxiliary region in series with channel followed by further channel region
DE19772759040 DE2759040A1 (en) 1977-12-30 1977-12-30 Multi-channel storage FET - has floating storage gate surrounded by insulator and has control and selector gates
DE19772758877 DE2758877A1 (en) 1977-12-30 1977-12-30 Multiple channel memory FET - is esp. for telephone circuit and has gate and control electrodes separated by thin oxide layers in insulating window

Publications (1)

Publication Number Publication Date
LU79239A1 true LU79239A1 (en) 1978-06-28

Family

ID=27187336

Family Applications (1)

Application Number Title Priority Date Filing Date
LU79239A LU79239A1 (en) 1977-09-30 1978-03-15 N-CHANNEL MEMORY FET

Country Status (1)

Country Link
LU (1) LU79239A1 (en)

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