KR980010602A - Mask for controlling transmittance and method for producing the same - Google Patents
Mask for controlling transmittance and method for producing the same Download PDFInfo
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- KR980010602A KR980010602A KR1019960031200A KR19960031200A KR980010602A KR 980010602 A KR980010602 A KR 980010602A KR 1019960031200 A KR1019960031200 A KR 1019960031200A KR 19960031200 A KR19960031200 A KR 19960031200A KR 980010602 A KR980010602 A KR 980010602A
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Abstract
투과율조절 마스크 및 그 제조방법을 개시하고 있다. 이는, 차광영역 및 투광영역으로 구분된 석영기판, 상기 석영기판의 차광영역 상에 형성되고, 투과율 조절막과 차광막이 적층되어 형성된 차광 패턴, 및 상기 차광영역의 소정부위에 형성된 투과율 조절막을 구비하는 것을 특징으로 한다. 따라서, 제조공정이 간편하고, 결함 발생이 방지되고, 세정공정시의 물리적, 화학적 처리에 의한 문제가 발생되지 않는다.Discloses a mask for controlling transmittance and a method for manufacturing the mask. The light guide plate includes a quartz substrate divided into a light shielding region and a light transmitting region, a light shielding pattern formed on the light shielding region of the quartz substrate, the light shielding pattern being formed by stacking a transmittance adjusting film and a light shielding film, and a transmittance adjusting film formed on a predetermined portion of the light shielding region . Therefore, the manufacturing process is simple, the occurrence of defects is prevented, and the problems caused by the physical and chemical treatment during the cleaning process do not occur.
Description
본 발명은 투과율조절 마스크(Transmittance Controlled Mask) 및 그 제조방법에 관한 것으로, 특히 결함발생 및 세정공정시 문제점 발생이 방지된 투과율조절 마스크 및 그 제조방법에 관한 것이다.The present invention relates to a transmittance-controlled mask and a method of manufacturing the same, and more particularly, to a transmittance-controlled mask and a method of manufacturing the same that prevent occurrence of defects and problems in a cleaning process.
투과율조절 마스크는 특정한 투과율을 갖는 차광막을 증착함으로써, 글로벌 단차 개선 및 패턴의 노칭이나 브리징을 감소시킬 수 있는 포토마스크이다.The transmittance control mask is a photomask capable of reducing the global step difference and the pattern notching and bridging by depositing a light shielding film having a specific transmittance.
제1도 내지 제3도는 종래 일반적인 투과율 조절 마스크 제조방법을 설명하기위해 도시한 단면도들이다.FIGS. 1 to 3 are cross-sectional views illustrating a conventional method for manufacturing a transmittance control mask.
먼저, 석영기판(1) 상에 빛을 차광시키는 크롬 패턴(3)을 형성한다(도1).First, a chromium pattern 3 for shielding light is formed on a quartz substrate 1 (Fig. 1).
다음, 크롬 패턴(3)이 형성된 기판 전면에 포토레지스트를 도포한 다음, 노광 및 현상하여 상기 석영기판(1)과 크롬패턴(3) 일부를 노출시키는 포토레지스트 패턴(5)을 형성한다(도2).Next, a photoresist is applied to the entire surface of the substrate on which the chrome pattern 3 is formed, and then exposed and developed to form a photoresist pattern 5 exposing the quartz substrate 1 and a part of the chrome pattern 3 2).
노출된 상기 기판 상에 스퍼터링을 통해 투과율 조절 물질을 증착하여 투과율 조절막(7)을 형성한 다음, 포토레지스트 패턴(5)을 리프트-오프(lift-off) 방법으로 제거한다(도3).The transmittance controlling material 7 is deposited on the exposed substrate by sputtering to form a transmittance adjusting film 7 and then the photoresist pattern 5 is removed by a lift-off method (FIG. 3).
이와 같이 제조된 일반적인 투과율 조절 마스크는 투과율 조절막(7) 형성조건에 따라 투과율 조절이 가능한 장점이 있다.The general transmittance control mask manufactured as described above has an advantage that the transmittance can be controlled according to the conditions for forming the transmittance adjusting film 7.
그러나, 투과율 조절막 형성시 결함이 발생될 가능성이 많고, 마스크 세정시 영향으로 인해 투과율이 변화되거나 투과율 조절막이 벗겨질수 있는 가능성이 있다.However, there is a high possibility that defects are likely to occur during formation of the transmittance controlling film, and there is a possibility that the transmittance may be changed or the transmittance controlling film may be peeled off due to the influence of the mask cleaning.
본 발명은 상기 문제점을 해결하여 결함발생이 방지되고, 세정시 투과율이 변화되거나 제거되는 것을 방지할 수 있는 투과율 조절 마스크를 제공하는 것이다.SUMMARY OF THE INVENTION The present invention has been made to solve the above problems, and it is an object of the present invention to provide a transmittance adjusting mask capable of preventing the occurrence of defects and preventing the transmittance from being changed or removed during cleaning.
본 발명이 이루고자하는 다른 기술적 과제는 상기 투과율 조절 마스크를 제조하는 데 적합한 제조방법을 제공하는 것이다.It is another object of the present invention to provide a manufacturing method suitable for manufacturing the transmittance control mask.
도1 내지 도3은 종래 일반적인 투과율 조절 마스크 제조방법을 설명하기 위해 도시한 단면도들이다.FIGS. 1 to 3 are cross-sectional views illustrating a conventional method for manufacturing a transmittance control mask.
도4 및 도5는 본 발명의 일 실시예에 따른 투과율조절 마스크를 도시한 단면도 및 평면도들이다.4 and 5 are a cross-sectional view and a plan view illustrating a mask for controlling transmittance according to an embodiment of the present invention.
도6 내지 도8은 본 발명의 일 실시예에 따른 투과율 조절 마스크 제조방법을 설명하기 위해 도시한 단면도들이다.6 to 8 are cross-sectional views illustrating a method of fabricating a mask for controlling transmittance according to an embodiment of the present invention.
상기 목적을 달성하기 위하여 본 발명은, 차광영역 및 투광영역으로 구분된 석영기판; 상기 석영기판의 차광영역 상에 형성되고, 투과율 조절막과 차광막이 적층되어 형성된 차광 패턴; 및 상기 차광영역의 소정부위에 형성된 투과율 조절막을 구비하는 것을 특징으로 하는 투과율조절 마스크를 제공한다.According to an aspect of the present invention, there is provided a quartz substrate comprising: a quartz substrate divided into a light shielding region and a light transmitting region; A light shielding pattern formed on the light shielding region of the quartz substrate and formed by stacking a light transmittance controlling film and a light shielding film; And a transmittance adjusting film formed at a predetermined portion of the light shielding region.
상기 다른 목적을 달성하기 위하여 본 발명은, 석영기판 상에 투과율 조절물질 및 차광물질을 차례로 도포한 다음 패터닝하여 투과율 조절막 및 차광패턴을 형성하는 제1단계; 차광패턴이 형성된 상기 결과물 전면에 포토레지스트를 도포한 다음 상기 차광패턴의 특정부분만을 노출시키는 포토레지스트 패턴을 형성하는 제2단계; 상기 노출된 차광패턴을 선택적으로 제거하는 제3단계; 및 상기 포토레지스트 패턴을 제거하는 제4단계를 구비하는 것을 특징으로 하는 투과율조절 마스크 제조방법을 제공한다.According to another aspect of the present invention, there is provided a method of fabricating a quartz substrate, comprising the steps of: sequentially forming a transmittance controlling material and a light shielding material on a quartz substrate and then patterning the resultant to form a transmittance controlling film and a light shielding pattern; A second step of forming a photoresist pattern that exposes only a specific portion of the light-shielding pattern after coating the photoresist on the entire surface of the resultant light-shielding pattern; A third step of selectively removing the exposed light shielding pattern; And a fourth step of removing the photoresist pattern. The present invention also provides a method of fabricating a mask for controlling transmittance.
따라서, 제조공정이 간편하고, 결함 발생이 방지되고, 세정공정시의 물리적, 화학적 처리에 의한 문제가 발생되지 않는다.Therefore, the manufacturing process is simple, the occurrence of defects is prevented, and the problems caused by the physical and chemical treatment during the cleaning process do not occur.
이하, 첨부한 도면을 참조하여 본 발명을 보다 상세하게 설명하고자 한다.DETAILED DESCRIPTION OF THE PREFERRED EMBODIMENTS Reference will now be made in detail to the preferred embodiments of the present invention.
제4도 및 제5도는 본 발명의 일 실시예에 따른 투과율조절 마스크를 도시한 단면도 및 평면도들로서, 비트라인 패턴 형성시 적용되는 투과율조절 마스크를 예로 들었다.FIGS. 4 and 5 are cross-sectional views and plan views illustrating a mask for controlling transmittance according to an embodiment of the present invention, and examples of the mask for controlling the transmittance applied when forming a bit line pattern are illustrated.
제4도 및 제5도를 참조하면, 석영기판(50) 상에 투과율 조절막(52)과 차광막(54)이 적층되어 빛이 차단되는 차광영역이 형성되어 있으며, 투과율 조절막(52) 만이 형성된 반투광영역이 형성되어 있다. 이때, 투과율 조절막(52)의 투과율은 2％∼80％로 적절히 조절될 수 있으며, 특히 투과율 조절막(52)이 하프톤 위상반전마스크로 대체 가능한 투과율로 조절하고자 할 경우, 하프톤 위상반전 마스크 기판을 그대로 적용할 수 있는 장점이 있다.4 and 5, a light-shielding region is formed on the quartz substrate 50 by stacking the transmittance controlling film 52 and the light-shielding film 54, and only the transmittance controlling film 52 A semi-light-transmitting region is formed. At this time, the transmittance of the transmittance adjusting film 52 can be appropriately adjusted to 2% to 80%. In particular, when the transmittance adjusting film 52 is to be adjusted to a transmittance that can be replaced by a halftone phase inversion mask, There is an advantage that the mask substrate can be applied as it is.
이 경우, 결함이 없는 마스크 기판이 가능하기 때문에 종래의 투과율 조절 마스크에서 발생가능한 결함 문제를 쉽게 해결할 수 있다. 또한, 세정공정시의 물리적, 화학적 처리에도 문제가 발생되지 않는다.In this case, since a defect-free mask substrate can be formed, a defect problem that can occur in a conventional transmittance control mask can be easily solved. Further, there is no problem in the physical and chemical treatment during the cleaning process.
제6도 내지 도8은 본 발명의 일 실시예에 따른 투과율 조절 마스크 제조방법을 설명하기 위해 도시한 단면도들이다.6 to 8 are cross-sectional views illustrating a method of fabricating a mask for controlling transmittance according to an embodiment of the present invention.
제6도를 참조하면, 먼저, 석영기판(50) 상에 투과율 조절물질을 도포하고, 그 위에 빛을 차단하기 위한Referring to FIG. 6, first, a quartz substrate 50 is coated with a transmittance adjusting material,
차광물질을 차례로 도포한다. 다음, 상기 차광물질층과 투과율 조절물질층을 패터닝하여 투과율 조절막(52)과 차광패턴(54)을 형성한다.Apply the carmine in order. Next, the light-shielding layer 52 and the light-shielding pattern 54 are formed by patterning the light-shielding layer and the transmittance controlling material layer.
제7도를 참조하면, 차광패턴(54)이 형성된 상기 결과물 전면에 포토레지스트를 도포한 다음 상기 차광패턴(54)의 특정부분만을 노출시키는 포토레지스트 패턴(56)을 형성한다.Referring to FIG. 7, a photoresist pattern is formed on the entire surface of the resultant surface on which the light-shielding pattern 54 is formed, and then a photoresist pattern 56 exposing only a specific portion of the light-shielding pattern 54 is formed.
제8도를 참조하면, 상기 노출된 차광패턴(54)을 제거한 다음, 상기 포토레지스트 패턴(56)을 제거함으로써 투과율 조절 마스크를 완성한다.Referring to FIG. 8, after the exposed light-shielding pattern 54 is removed, the photoresist pattern 56 is removed to complete the transmittance adjusting mask.
상술한 바와 같이 본 발명에 따르면, 제조공정이 간편하고, 결함 발생이 방지되고, 세정공정시의 물리적, 화학적 처리에 의한 문제가 발생되지 않는다.INDUSTRIAL APPLICABILITY As described above, according to the present invention, the manufacturing process is simple, the occurrence of defects is prevented, and the problems caused by the physical and chemical treatment during the cleaning process do not occur.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960031200A KR980010602A (en) | 1996-07-29 | 1996-07-29 | Mask for controlling transmittance and method for producing the same |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960031200A KR980010602A (en) | 1996-07-29 | 1996-07-29 | Mask for controlling transmittance and method for producing the same |
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| Publication Number | Publication Date |
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| KR980010602A true KR980010602A (en) | 1998-04-30 |
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| Application Number | Title | Priority Date | Filing Date |
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| KR1019960031200A KR980010602A (en) | 1996-07-29 | 1996-07-29 | Mask for controlling transmittance and method for producing the same |
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Cited By (4)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100560975B1 (en) * | 1999-06-16 | 2006-03-15 | 삼성전자주식회사 | Thin film transistor substrate for liquid crystal display and manufacturing method thereof |
| KR100560969B1 (en) * | 1998-12-31 | 2006-06-23 | 삼성전자주식회사 | Manufacturing method of optical mask for liquid crystal display device |
| KR100623975B1 (en) * | 1999-05-07 | 2006-09-13 | 삼성전자주식회사 | Photolithographic etching method of a thin film and manufacturing methods of a thin film transistor array panel for a liquid crystal display using the same |
| US7264905B2 (en) | 2003-01-31 | 2007-09-04 | Renesas Technology Corp. | Photomask, and method and apparatus for producing the same |
-
1996
- 1996-07-29 KR KR1019960031200A patent/KR980010602A/en not_active Application Discontinuation
Cited By (7)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100560969B1 (en) * | 1998-12-31 | 2006-06-23 | 삼성전자주식회사 | Manufacturing method of optical mask for liquid crystal display device |
| KR100623975B1 (en) * | 1999-05-07 | 2006-09-13 | 삼성전자주식회사 | Photolithographic etching method of a thin film and manufacturing methods of a thin film transistor array panel for a liquid crystal display using the same |
| KR100560975B1 (en) * | 1999-06-16 | 2006-03-15 | 삼성전자주식회사 | Thin film transistor substrate for liquid crystal display and manufacturing method thereof |
| US7264905B2 (en) | 2003-01-31 | 2007-09-04 | Renesas Technology Corp. | Photomask, and method and apparatus for producing the same |
| US7582397B2 (en) | 2003-01-31 | 2009-09-01 | Renesas Technology Corp. | Photomask, and method and apparatus for producing the same |
| US7585599B2 (en) | 2003-01-31 | 2009-09-08 | Renesas Technology Corp. | Photomask, and method and apparatus for producing the same |
| US7771904B2 (en) | 2003-01-31 | 2010-08-10 | Renesas Technology Corp. | Photomask, and method and apparatus for producing the same |
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