KR980006306A - Capacitor Formation Method in Semiconductor Device - Google Patents

Abstract

A method of forming a capacitor of a semiconductor device is disclosed. The present invention includes forming an amorphous silicon film pattern on a semiconductor substrate, forming an HSG polysilicon film on the surface of the amorphous silicon film pattern, and sequentially forming a dielectric film and a plate electrode on the HSG polysilicon film. In the method of forming a capacitor of a semiconductor device, the forming of the HSG polysilicon film may include forming an HSG polysilicon nucleus on the surface of the amorphous silicon film pattern using a silicon source gas at a first temperature. And forming an HSG polysilicon film on the surface of the amorphous silicon film pattern by annealing the resultant product having the HSG polysilicon nucleus formed at a second temperature higher than the first temperature. As a result, a uniform HSG polysilicon film can be formed while suppressing the occurrence of bold defects on the surface of the amorphous silicon film pattern, thereby maximizing the surface area of the storage electrode composed of the amorphous silicon film pattern and the HSG polysilicon film.

Description

Capacitor Formation Method in Semiconductor Device

As this is a public information case, the full text was not included.

4 and 5 are cross-sectional views illustrating a method of forming a capacitor according to the present invention.

Claims (6)

Forming an amorphous silicon film pattern on the semiconductor substrate, forming an HSG polysilicon film on the surface of the amorphous silicon film pattern, and sequentially forming a dielectric film and a plate electrode on the HSG polysilicon film. In the method of forming a capacitor of the device, the forming of the HSG polysilicon film comprises forming an HSG polysilicon nucleus on the surface of the amorphous silicon film pattern by using a silicon source gas at a first temperature on the resultant product of the amorphous silicon film pattern. And forming an HSG polysilicon film on the amorphous silicon film pattern surface by annealing the resultant product on which the HSG polysilicon nucleus is formed at a second temperature higher than the first temperature. The method of claim 1, wherein the first temperature and the second temperature are 580 ° C. to 595 ° C. and 605 ° C. to 620 ° C., respectively. The method of claim 1, wherein the silicon source gas is silane ( ) Gas or Die Silane A method of forming a capacitor of a semiconductor device, characterized in that the gas. Forming an amorphous silicon film pattern on the semiconductor substrate, forming an HSG polysilicon film on the surface of the amorphous silicon film pattern, and sequentially forming a dielectric film and a plated electrode on the HSG polysilicon film. In the method of forming a capacitor of a semiconductor device, the forming of the HSG polysilicon film may include forming an HSG polysilicon core on the surface of the amorphous silicon film pattern using a silicon source gas at a first temperature. And annealing the resultant product on which the HSG polysilicon nucleus is formed at a second temperature lower than the first temperature to form an HSG polysilicon film on the amorphous silicon film pattern surface. The method of claim 4, wherein the first temperature and the second temperature are 605 ° C. to 610 ° C. and 585 ° C. to 595 ° C., respectively. The method of claim 4, wherein the silicon source gas is silane ( ) Gas or Die Silane A method of forming a capacitor of a semiconductor device, characterized in that the gas.