KR980005980A - Morse transistor test pattern formation method - Google Patents
Morse transistor test pattern formation method Download PDFInfo
- Publication number
- KR980005980A KR980005980A KR1019960026470A KR19960026470A KR980005980A KR 980005980 A KR980005980 A KR 980005980A KR 1019960026470 A KR1019960026470 A KR 1019960026470A KR 19960026470 A KR19960026470 A KR 19960026470A KR 980005980 A KR980005980 A KR 980005980A
- Authority
- KR
- South Korea
- Prior art keywords
- mos transistor
- test pattern
- forming
- transistor test
- film
- Prior art date
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- Drying Of Semiconductors (AREA)
- Testing Or Measuring Of Semiconductors Or The Like (AREA)
Abstract
본 발명은 반도체 장치의 모스 트랜지스터 동작 특성을 측정하기 위해 스크라이브 라인상에 형성되는 모스 트랜지스터 레스트 패턴 형성방법에 있어서, 상기 스크라이브 라인 상에 게이트 산화막, 게이트 전극, 활성영역이 형성된 모스 트랜지스터 구조 상부에 소정의 절연막을 형성하는 단계 및, 상기 게이트 산화막 및 상기 절연막을 보호하기 위하여 전체구조 상부에 폴리 실리콘막을 형성한 후, 이후 형성될 콘택홀과 오버랩 되지 않도록 선택식각하는 단계를 포함하여 이루어지는 것을 특징으로 한다.A MOS transistor reset pattern forming method for forming MOS transistor reset pattern on a scribe line for measuring a MOS transistor operating characteristic of a semiconductor device, the MOS transistor reset pattern forming method comprising the steps of: Forming a polysilicon film on the entire structure to protect the gate oxide film and the insulating film, and then selectively etching the polysilicon film so as not to overlap with the contact hole to be formed thereafter .
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2도는 본 발명의 일실시예에 따른 반도체 장치의 모스 트랜지스터 테스트 패턴 단면도.FIG. 2 is a cross-sectional view of a MOS transistor test pattern of a semiconductor device according to an embodiment of the present invention; FIG.
Claims (1)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960026470A KR980005980A (en) | 1996-06-29 | 1996-06-29 | Morse transistor test pattern formation method |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960026470A KR980005980A (en) | 1996-06-29 | 1996-06-29 | Morse transistor test pattern formation method |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR980005980A true KR980005980A (en) | 1998-03-30 |
Family
ID=66241098
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960026470A KR980005980A (en) | 1996-06-29 | 1996-06-29 | Morse transistor test pattern formation method |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR980005980A (en) |
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100409032B1 (en) * | 2001-11-23 | 2003-12-11 | 주식회사 하이닉스반도체 | Method of forming a test pattern, method of measuring an etching characteristic using the same and circuit for measurement of the etching characteristic |
-
1996
- 1996-06-29 KR KR1019960026470A patent/KR980005980A/en not_active Application Discontinuation
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100409032B1 (en) * | 2001-11-23 | 2003-12-11 | 주식회사 하이닉스반도체 | Method of forming a test pattern, method of measuring an etching characteristic using the same and circuit for measurement of the etching characteristic |
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| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |