KR980005827A - Interlayer insulating film of semiconductor device and manufacturing method thereof - Google Patents

Abstract

An improved interlayer insulating film and a method of manufacturing the same are disclosed. The interlayer insulating film of the present invention is an interlayer planarizing film of a semiconductor device, and a flow silicon oxide film having a small moisture content and excellent in dielectric constant and filling property is used to prevent the diffusion of moisture, thereby preventing corrosion of the metal film, The operation speed is improved.

Description

Interlayer insulating film of semiconductor device and manufacturing method thereof

Since this is a trivial issue, I did not include the contents of the text.

FIGS. 2A to 2C are diagrams showing a process sequence of a method for manufacturing an interlayer insulating film of a semiconductor device of the present invention. FIG.

Claims (11)

A first oxide film including a silicon substrate component and a first atom on a silicon substrate on which a metal interconnection for electrically connecting junction regions of the transistor and the transistor is formed and insulates the metal interconnection; A planarization insulating film formed on the first oxide film and having a planarized surface, the planarization insulating film including a silicon substrate component, a first component and a second component; And a second oxide film having the same composition as the first oxide film on the planarization insulating film. The interlayer insulating film of a semiconductor device according to claim 1, wherein the first component is O2. The interlayer insulating film of a semiconductor device according to claim 1, wherein the second component is SF4. The interlayer insulating film of a semiconductor device according to any one of claims 1 to 3, wherein the interlayer planarizing film is an SiOF film. The interlayer insulating film of a semiconductor device according to claim 1, wherein the first oxide film has a thickness of 100 to 1500 ANGSTROM. The interlayer insulating film of a semiconductor device according to claim 1, wherein the thickness of the second oxide film is 3000 to 5000 ANGSTROM. Forming a first oxide film on a silicon substrate on which a metal interconnection electrically connecting junction regions of the transistor and the transistor is formed; Depositing a silicon oxide oxide film on the first oxide film; Removing the floating silicon oxide film to have a flat surface; And forming a second oxide film on an upper surface of the structure. 8. The method of claim 7, wherein the first oxide layer and the second oxide layer are formed by a plasma-assisted chemical vapor deposition method. 8. The method of claim 7, wherein the deposited silicon nitride oxide film has a thickness of 9000 to 10000 angstroms. The method for manufacturing an interlayer insulating film of a semiconductor device according to claim 7, wherein the surface of the siliconized flow film is chemically and mechanically polished to form the silicon oxide film having a flat surface. The method of manufacturing a semiconductor device according to claim 7, wherein the silicon fluoride oxide film is formed by a high density plasma or chemical vapor deposition method. ※ Note: It is disclosed by the contents of the first application.