KR980005831A - Interlayer insulating film of semiconductor device and manufacturing method thereof - Google Patents
Interlayer insulating film of semiconductor device and manufacturing method thereof Download PDFInfo
- Publication number
- KR980005831A KR980005831A KR1019960024552A KR19960024552A KR980005831A KR 980005831 A KR980005831 A KR 980005831A KR 1019960024552 A KR1019960024552 A KR 1019960024552A KR 19960024552 A KR19960024552 A KR 19960024552A KR 980005831 A KR980005831 A KR 980005831A
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- KR
- South Korea
- Prior art keywords
- film
- interlayer
- interlayer insulating
- insulating film
- planarizing
- Prior art date
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- Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
- Formation Of Insulating Films (AREA)
Abstract
본 발명은 개선된 층간 절연막 및 그 제조방법이 개시된다. 본 발명의 층간 절연막은 층간 평탄화막인 BPSG막 상부에 질산화막으로 된 확산 방지막이 형성되어, BPSG막내의 붕소 및 인 이온의 외방 확산을 방지함과 동시에, 상부의 전도층으로 부터 스트레스를 방지하여 주며, 또한 외부로터의 수분 및 산소등의 공격을 방지하여 주므로써, 소자의 특성이 개선된다.An improved interlayer insulating film and a method of manufacturing the same are disclosed. In the interlayer insulating film of the present invention, a diffusion preventing film made of a nitrided oxide is formed on the BPSG film as the interlayer planarizing film to prevent outward diffusion of boron and phosphorus ions in the BPSG film, and to prevent stress from the upper conductive layer Also, by preventing the outer rotor from being attacked by moisture and oxygen, the characteristics of the element are improved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제1도는 본 발명의 반도체 소자의 층간 절연막 제조방법에 따라 제조된 반도체 소자의 단면도.FIG. 1 is a sectional view of a semiconductor device manufactured according to a method for manufacturing an interlayer insulating film of a semiconductor device of the present invention. FIG.
Claims (7)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
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KR1019960024552A KR980005831A (en) | 1996-06-27 | 1996-06-27 | Interlayer insulating film of semiconductor device and manufacturing method thereof |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960024552A KR980005831A (en) | 1996-06-27 | 1996-06-27 | Interlayer insulating film of semiconductor device and manufacturing method thereof |
Publications (1)
Publication Number | Publication Date |
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KR980005831A true KR980005831A (en) | 1998-03-30 |
Family
ID=66240531
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
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KR1019960024552A KR980005831A (en) | 1996-06-27 | 1996-06-27 | Interlayer insulating film of semiconductor device and manufacturing method thereof |
Country Status (1)
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KR (1) | KR980005831A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7223951B2 (en) | 2005-01-03 | 2007-05-29 | Samsung Electronics Co., Ltd. | Cooking control method of microwave oven and apparatus for performing the same |
-
1996
- 1996-06-27 KR KR1019960024552A patent/KR980005831A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
US7223951B2 (en) | 2005-01-03 | 2007-05-29 | Samsung Electronics Co., Ltd. | Cooking control method of microwave oven and apparatus for performing the same |
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