KR980005831A - Interlayer insulating film of semiconductor device and manufacturing method thereof - Google Patents

Interlayer insulating film of semiconductor device and manufacturing method thereof Download PDF

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Publication number
KR980005831A
KR980005831A KR1019960024552A KR19960024552A KR980005831A KR 980005831 A KR980005831 A KR 980005831A KR 1019960024552 A KR1019960024552 A KR 1019960024552A KR 19960024552 A KR19960024552 A KR 19960024552A KR 980005831 A KR980005831 A KR 980005831A
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KR
South Korea
Prior art keywords
film
interlayer
interlayer insulating
insulating film
planarizing
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Application number
KR1019960024552A
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Korean (ko)
Inventor
박민규
김천수
Original Assignee
김주용
현대전자산업 주식회사
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Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019960024552A priority Critical patent/KR980005831A/en
Publication of KR980005831A publication Critical patent/KR980005831A/en

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  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Formation Of Insulating Films (AREA)

Abstract

본 발명은 개선된 층간 절연막 및 그 제조방법이 개시된다. 본 발명의 층간 절연막은 층간 평탄화막인 BPSG막 상부에 질산화막으로 된 확산 방지막이 형성되어, BPSG막내의 붕소 및 인 이온의 외방 확산을 방지함과 동시에, 상부의 전도층으로 부터 스트레스를 방지하여 주며, 또한 외부로터의 수분 및 산소등의 공격을 방지하여 주므로써, 소자의 특성이 개선된다.An improved interlayer insulating film and a method of manufacturing the same are disclosed. In the interlayer insulating film of the present invention, a diffusion preventing film made of a nitrided oxide is formed on the BPSG film as the interlayer planarizing film to prevent outward diffusion of boron and phosphorus ions in the BPSG film, and to prevent stress from the upper conductive layer Also, by preventing the outer rotor from being attacked by moisture and oxygen, the characteristics of the element are improved.

Description

반도체 소자의 층간 절연막 및 그 제조방법Interlayer insulating film of semiconductor device and manufacturing method thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제1도는 본 발명의 반도체 소자의 층간 절연막 제조방법에 따라 제조된 반도체 소자의 단면도.FIG. 1 is a sectional view of a semiconductor device manufactured according to a method for manufacturing an interlayer insulating film of a semiconductor device of the present invention. FIG.

Claims (7)

비평탄한 반도체 기판에 상부에 형성되고, 반도체 기판 표면을 평탄하게 하기 위한 도펀트가 함유된 층간 평탄화막; 및 상기 층간 평탄화막 상부에 형성되고, 층간 평탄화막의 도펀트 확산을 방지하기 위한 방지막을 포함하는 것을 특징으로 하는 반도체 소자의 층간 절연막.An interlayer planarizing film formed on the non-planar semiconductor substrate and containing a dopant for planarizing the surface of the semiconductor substrate; And an interlayer insulating film formed on the interlayer planarizing film, the interlayer insulating film comprising a barrier film for preventing dopant diffusion of the interlayer planarizing film. 제1항에 있어서, 상기 확산 방지막은 질산화막(oxynitride)인 것을 특징으로 하는 반도체 소자의 층간 절연막.The interlayer insulating film of a semiconductor device according to claim 1, wherein the diffusion barrier layer is a silicon oxynitride layer. 하부 토폴로지가 있어 평탄하지 않는 표면을 갖는 반도체 기판에 도펀트를 포함한 층간 평탄화막을 증착하는 단계; 및 상기 층간 평탄화막 상부에 도펀트 확산 방지막을 증착하는 단계를 포함하는 것을 특징으로 하는 반도체 소자의 층간 절연막 제조방법.Depositing an interlayer planarizing film including a dopant on a semiconductor substrate having a lower topology and having a non-planar surface; And depositing a dopant diffusion barrier layer over the interlayer planarization layer. ≪ RTI ID = 0.0 > 11. < / RTI > 제3항에 있어서, 상기 확산 방지막은 질산화막(xoynitride)인 것을 특징으로 하는 반도체 소자의 층간 절연막 제조방법.4. The method of claim 3, wherein the diffusion barrier layer is a xoynitride layer. 제4항에 있어서, 상기 질산화막은 PECVD 방식에 의하여 형성하는 것을 특징으로 하는 반도체 소자의 층간 절연막 제조방법.5. The method according to claim 4, wherein the nitrified oxide film is formed by a PECVD method. 제3항에 있어서, 상기 확산 방지막의 두께는 500 내지 700Å 정도인 것을 특징으로 하는 반도체 소자의 층간 절연막 제조방법.4. The method of claim 3, wherein the diffusion barrier layer has a thickness of about 500 to 700 ANGSTROM. 제3항에 있어서, 상기 층간 평탄화막은 BPSG막인 것을 특징으로 하는 반도체 소자의 층간 절연막 제조방법.The method according to claim 3, wherein the interlayer planarizing film is a BPSG film. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960024552A 1996-06-27 1996-06-27 Interlayer insulating film of semiconductor device and manufacturing method thereof KR980005831A (en)

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KR1019960024552A KR980005831A (en) 1996-06-27 1996-06-27 Interlayer insulating film of semiconductor device and manufacturing method thereof

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KR1019960024552A KR980005831A (en) 1996-06-27 1996-06-27 Interlayer insulating film of semiconductor device and manufacturing method thereof

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7223951B2 (en) 2005-01-03 2007-05-29 Samsung Electronics Co., Ltd. Cooking control method of microwave oven and apparatus for performing the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7223951B2 (en) 2005-01-03 2007-05-29 Samsung Electronics Co., Ltd. Cooking control method of microwave oven and apparatus for performing the same

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