KR970077738A - Manufacturing method of thin film transistor using oxygen ion implantation process - Google Patents

Manufacturing method of thin film transistor using oxygen ion implantation process Download PDF

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Publication number
KR970077738A
KR970077738A KR1019960015573A KR19960015573A KR970077738A KR 970077738 A KR970077738 A KR 970077738A KR 1019960015573 A KR1019960015573 A KR 1019960015573A KR 19960015573 A KR19960015573 A KR 19960015573A KR 970077738 A KR970077738 A KR 970077738A
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KR
South Korea
Prior art keywords
polysilicon film
forming
ion implantation
photoresist pattern
manufacturing
Prior art date
Application number
KR1019960015573A
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Korean (ko)
Inventor
정준호
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960015573A priority Critical patent/KR970077738A/en
Publication of KR970077738A publication Critical patent/KR970077738A/en

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  • Thin Film Transistor (AREA)

Abstract

산소이온 주입공정을 이용한 박막트랜지스터의 제조방법에 관하여 개시한다. 본 발명은 기판 상에 폴리실리콘막을 형성하는 단계와, 상기 폴리실리콘막 상에 포토레지스트 패턴을 형성하는 단계와, 상기 포트레지스트 패턴을 이온주입 마스크로 산소이온을 주입하는 단계와, 상기 포토레지스트 패턴을 제거하는 단계와, 상기 이온주입된 폴리실리콘막을 산화시켜 산화막에 의하여 분리된 액티브용 및 게이트전극용 폴리실리콘막 패턴을 형성하는 단계를 포함하는 박막트랜지스터 제조방법을 제공한다. 본 발명은 폴리실리콘막을 식각공정에 의하지 않고 산소이온주입 및 산화공정에 의하여 패터닝하므로써 신뢰성있는 박막트랜지스터를 제조할 수 있다.A method of manufacturing a thin film transistor using an oxygen ion implantation process will be described. The present invention provides a method of manufacturing a semiconductor device, comprising: forming a polysilicon film on a substrate; forming a photoresist pattern on the polysilicon film; implanting oxygen ions into the photoresist pattern as an ion implantation mask; And oxidizing the ion implanted polysilicon film to form a polysilicon film pattern for active and gate electrodes separated by the oxide film. The present invention can manufacture a reliable thin film transistor by patterning a polysilicon film by an oxygen ion implantation and an oxidation process without using an etching process.

Description

산소이온 주입공정을 이용한 박막트랜지스터의 제조방법Manufacturing method of thin film transistor using oxygen ion implantation process

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도 내지 제5도는 본 발명에 의한 박막트랜지스터의 제조방법을 설명하기 위하여 도시한 단면도들이다.FIGS. 2 to 5 are cross-sectional views illustrating a method of manufacturing a TFT according to the present invention.

Claims (1)

기판 상에 제1폴리실리콘막을 형성하는 단계; 상기 제1폴리실리콘막 상에 제1포토레지스트 패턴을 형성하는 단계; 상기 제1포토레지스트 패턴을 이온주입 마스크로 산소이온을 주입하는 단계; 상기 제1포토레지스트 패턴을 제거하는 단계; 상기 이온주입된 제1폴리실리콘막을 산화시켜 산화막에 의하여 분리된 활성층용 제1폴리실리콘막 패턴을 형성하는 단계; 상기 제1폴리실리콘막 패턴 상에 게이트절연막을 형성하는 단계; 상기 게이트절연막이 형성된 기판의 전면에 제2폴리실리콘막을 형성하는 단계; 상기 제2폴리실리콘막 상에 제2포토레지스트 패턴을 형성하는 단계; 상기 제2포토레지스트 패턴을 이온주입 마스크로 산소이온을 주입하는 단계; 상기 제2포토레지스트 패턴을 제거하는 단계; 상기 이온주입된 제2폴리실리콘막을 산화시켜 산화막에 의하여 분리된 게이트전극용 제2폴리실리콘막 패턴을 형성하는 단계; 및 상기 제2폴리실리콘막 패턴이 형성된 기판의 전면에 층간절연막을 형성하는 단계를 포함하는 것을 특징으로 하는 박막트랜지스터의 제조방법.Forming a first polysilicon film on the substrate; Forming a first photoresist pattern on the first polysilicon film; Implanting oxygen ions into the first photoresist pattern using an ion implantation mask; Removing the first photoresist pattern; Forming a first polysilicon film pattern for an active layer separated by an oxide film by oxidizing the ion-implanted first polysilicon film; Forming a gate insulating film on the first polysilicon film pattern; Forming a second polysilicon film on the entire surface of the substrate on which the gate insulating film is formed; Forming a second photoresist pattern on the second polysilicon film; Implanting oxygen ions into the second photoresist pattern using an ion implantation mask; Removing the second photoresist pattern; Oxidizing the ion-implanted second polysilicon film to form a second polysilicon film pattern for the gate electrode separated by the oxide film; And forming an interlayer insulating film on the entire surface of the substrate having the second polysilicon film pattern formed thereon. ※ 참고사항 : 최초출원 내용에 의하여 공개되는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960015573A 1996-05-11 1996-05-11 Manufacturing method of thin film transistor using oxygen ion implantation process KR970077738A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960015573A KR970077738A (en) 1996-05-11 1996-05-11 Manufacturing method of thin film transistor using oxygen ion implantation process

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960015573A KR970077738A (en) 1996-05-11 1996-05-11 Manufacturing method of thin film transistor using oxygen ion implantation process

Publications (1)

Publication Number Publication Date
KR970077738A true KR970077738A (en) 1997-12-12

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Application Number Title Priority Date Filing Date
KR1019960015573A KR970077738A (en) 1996-05-11 1996-05-11 Manufacturing method of thin film transistor using oxygen ion implantation process

Country Status (1)

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KR (1) KR970077738A (en)

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