KR970077216A - Polyside gate electrode manufacturing method - Google Patents
Polyside gate electrode manufacturing method Download PDFInfo
- Publication number
- KR970077216A KR970077216A KR1019960018215A KR19960018215A KR970077216A KR 970077216 A KR970077216 A KR 970077216A KR 1019960018215 A KR1019960018215 A KR 1019960018215A KR 19960018215 A KR19960018215 A KR 19960018215A KR 970077216 A KR970077216 A KR 970077216A
- Authority
- KR
- South Korea
- Prior art keywords
- layer
- forming
- metal silicide
- silicide layer
- gate electrode
- Prior art date
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- Insulated Gate Type Field-Effect Transistor (AREA)
- Electrodes Of Semiconductors (AREA)
Abstract
폴리사이드 게이트전극 제조방법이 기재되어 있다. 반도체기판 상에 폴리실리콘층 및 금속실리사이드층을 순차적으로 형성하고, 상기 금속실리사이드층 상에 인-시츄 공정으로 산화방지막을 형성한 다음, 절연막을 형성한다. 다음, 상기 절연막 상에 게이트전극 형성을 위한 포토레지스트 패턴을 형성하고, 상기 포토레지스트 패턴을 식각마스크로 사용하여 절연막 패턴을 식각마스크로 사용하여 상기 산화방지막, 금속실리사이드층 및 폴리실리콘층을 패터닝한다. 따라서, 타이타늄실리사이드층이 산화되는 것을 방지할 수 있다.A method of manufacturing a polyside gate electrode is described. A polysilicon layer and a metal silicide layer are sequentially formed on the semiconductor substrate, an antioxidant film is formed on the metal silicide layer by an in-situ process, and then an insulating film is formed. Next, a photoresist pattern for forming a gate electrode is formed on the insulating layer, and the antioxidant layer, the metal silicide layer, and the polysilicon layer are patterned by using the photoresist pattern as an etching mask and using the insulating layer pattern as an etching mask. . Therefore, the titanium silicide layer can be prevented from being oxidized.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제2E도는 본 발명의 실시예에 따른 타이타늄 폴리사이드 게이트전극 제조방법을 설명하기 위해 도시한 단면도들이다.2E is a cross-sectional view illustrating a method of manufacturing a titanium polyside gate electrode according to an exemplary embodiment of the present invention.
Claims (4)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960018215A KR970077216A (en) | 1996-05-28 | 1996-05-28 | Polyside gate electrode manufacturing method |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960018215A KR970077216A (en) | 1996-05-28 | 1996-05-28 | Polyside gate electrode manufacturing method |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970077216A true KR970077216A (en) | 1997-12-12 |
Family
ID=66284486
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960018215A KR970077216A (en) | 1996-05-28 | 1996-05-28 | Polyside gate electrode manufacturing method |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970077216A (en) |
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1996
- 1996-05-28 KR KR1019960018215A patent/KR970077216A/en not_active Application Discontinuation
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