KR970077216A - Polyside gate electrode manufacturing method - Google Patents

Polyside gate electrode manufacturing method Download PDF

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Publication number
KR970077216A
KR970077216A KR1019960018215A KR19960018215A KR970077216A KR 970077216 A KR970077216 A KR 970077216A KR 1019960018215 A KR1019960018215 A KR 1019960018215A KR 19960018215 A KR19960018215 A KR 19960018215A KR 970077216 A KR970077216 A KR 970077216A
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KR
South Korea
Prior art keywords
layer
forming
metal silicide
silicide layer
gate electrode
Prior art date
Application number
KR1019960018215A
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Korean (ko)
Inventor
최길현
배대록
이응준
김병준
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960018215A priority Critical patent/KR970077216A/en
Publication of KR970077216A publication Critical patent/KR970077216A/en

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  • Insulated Gate Type Field-Effect Transistor (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

폴리사이드 게이트전극 제조방법이 기재되어 있다. 반도체기판 상에 폴리실리콘층 및 금속실리사이드층을 순차적으로 형성하고, 상기 금속실리사이드층 상에 인-시츄 공정으로 산화방지막을 형성한 다음, 절연막을 형성한다. 다음, 상기 절연막 상에 게이트전극 형성을 위한 포토레지스트 패턴을 형성하고, 상기 포토레지스트 패턴을 식각마스크로 사용하여 절연막 패턴을 식각마스크로 사용하여 상기 산화방지막, 금속실리사이드층 및 폴리실리콘층을 패터닝한다. 따라서, 타이타늄실리사이드층이 산화되는 것을 방지할 수 있다.A method of manufacturing a polyside gate electrode is described. A polysilicon layer and a metal silicide layer are sequentially formed on the semiconductor substrate, an antioxidant film is formed on the metal silicide layer by an in-situ process, and then an insulating film is formed. Next, a photoresist pattern for forming a gate electrode is formed on the insulating layer, and the antioxidant layer, the metal silicide layer, and the polysilicon layer are patterned by using the photoresist pattern as an etching mask and using the insulating layer pattern as an etching mask. . Therefore, the titanium silicide layer can be prevented from being oxidized.

Description

폴리사이드 게이트전극 제조방법Polyside gate electrode manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2E도는 본 발명의 실시예에 따른 타이타늄 폴리사이드 게이트전극 제조방법을 설명하기 위해 도시한 단면도들이다.2E is a cross-sectional view illustrating a method of manufacturing a titanium polyside gate electrode according to an exemplary embodiment of the present invention.

Claims (4)

반도체기판 상에 폴리실리콘층 및 금속실리사이드층을 순차적으로 형성하는 단계; 상기 금속실리사이드층 상에 인-시츄 공정으로 산화방지막을 형성하는 단계; 상기 산화방지막 상에 절연막을 형성하는 단계; 상기 절연막 상에 게이트전극 형성을 위한 포토레지스트 패턴을 형성하는 단계; 상기 포토레지스트 패턴을 식각마스크로 사용하여 절연막 패턴을 형성하는 단계; 상기 포토레지스트 패턴을 제거하는 단계; 및 상기 절연막 패턴을 식각마스크로 사용하여 상기 산화방지막, 금속실리사이드층 및 폴리실리콘층을 패터닝하는 단계를 구비하는 것을 특징으로 하는 폴리사이드 게이트전극 제조방법.Sequentially forming a polysilicon layer and a metal silicide layer on the semiconductor substrate; Forming an anti-oxidation film on the metal silicide layer by an in-situ process; Forming an insulating film on the antioxidant film; Forming a photoresist pattern for forming a gate electrode on the insulating film; Forming an insulating film pattern using the photoresist pattern as an etching mask; Removing the photoresist pattern; And patterning the anti-oxidation layer, the metal silicide layer, and the polysilicon layer using the insulating layer pattern as an etching mask. 제1항에 있어서, 상기 폴리실리콘층과 금속실리사이드층 사이에 확산방지막을 더 형성하는 것을 특징으로 하는 폴리사이드 게이트전극 제조방법.The method of claim 1, further comprising forming a diffusion barrier between the polysilicon layer and the metal silicide layer. 제1항에 있어서, 상기 금속실리사이드층은 타이타늄실리사이드(TiSix)로 형성하는 것을 특징으로 하는 폴리사이드 게이트전극 제조방법.The method of claim 1, wherein the metal silicide layer is formed of titanium silicide (TiSix). 제1항에 있어서, 상기 산화방지막은 질화타이타늄실리사이드층인 것을 특징으로 하는 폴리사이드 게이트 전극 제조방법.The method of claim 1, wherein the anti-oxidation film is a titanium nitride silicide layer. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019960018215A 1996-05-28 1996-05-28 Polyside gate electrode manufacturing method KR970077216A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960018215A KR970077216A (en) 1996-05-28 1996-05-28 Polyside gate electrode manufacturing method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960018215A KR970077216A (en) 1996-05-28 1996-05-28 Polyside gate electrode manufacturing method

Publications (1)

Publication Number Publication Date
KR970077216A true KR970077216A (en) 1997-12-12

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KR1019960018215A KR970077216A (en) 1996-05-28 1996-05-28 Polyside gate electrode manufacturing method

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KR (1) KR970077216A (en)

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