KR970077183A - Method for monitoring switching characteristics of semiconductor devices - Google Patents
Method for monitoring switching characteristics of semiconductor devices Download PDFInfo
- Publication number
- KR970077183A KR970077183A KR1019960017411A KR19960017411A KR970077183A KR 970077183 A KR970077183 A KR 970077183A KR 1019960017411 A KR1019960017411 A KR 1019960017411A KR 19960017411 A KR19960017411 A KR 19960017411A KR 970077183 A KR970077183 A KR 970077183A
- Authority
- KR
- South Korea
- Prior art keywords
- collector
- emitter current
- saturation voltage
- current saturation
- switching characteristics
- Prior art date
- Legal status (The legal status is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the status listed.)
- Withdrawn
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- Testing Of Individual Semiconductor Devices (AREA)
Abstract
이 발명은 반도체 소자의 특성 파라미터를 검출하는 방법중 공정상산포에 의하여 발생되는 스위칭 속도의 편차를 모니터하는 반도체 소자의 스위칭 특성을 모니터하는 방법에 관한 것이다.The present invention relates to a method of monitoring the switching characteristics of a semiconductor device which monitors the deviation of the switching speed caused by the scattering of the process among the methods of detecting the characteristic parameters of the semiconductor device.
이 발명의 구성은 컬렉터-이미터 저전류 포화전압을 읽는 단계와, 컬렉터-이미터 저전류 포화전압이 일정값보다 큰 지를 판단하는 비교단계와, 상기의 비교단계에서 컬렉터-이미터 저전류 포화전압이 일정값보다 크지 않을 경우에 단품을 불량한 것으로 결정하는 단품불량 결정단계와, 비교단계에서 컬렉터-이미터 저전류 포화전압이 일전값보다 클 경우에 단품을 양호한 것으로 결정하는 단품양호 결정단계와, 단품불량 결정단계와 단품양호 결정단계에서 결정한 스위칭 특성을 모니터에 나타내는 특성모니터 단계로 이루어진다.The method includes comparing a collector-emitter current saturation voltage, determining whether a collector-emitter current saturation voltage is greater than a predetermined value, and comparing the collector-emitter current saturation voltage with a collector- Determining whether a single product is defective if the voltage is not greater than a predetermined value; determining whether the single-component is a good product when the collector-emitter current saturation voltage is greater than the previous value in the comparison step; , And a characteristic monitoring step of displaying the switching characteristics determined in the single article defect determination step and the single article good determination step on a monitor.
이 발명의 효과는 반도체 소자이 스위칭 특성 향상을 위하여 불순물 주입이나 전자빔 주사에 따른 소자의 특성 변화 요인으로 가장 밀접한 상관 관계를 갖는 직류 특성중 컬렉터-이미터 저전류 포화전압 파라미터를 선정하여 반도체 소자의 출하 품질의 보증 및 개선할 수 있는 반도체 소자의 스위칭 특성을 모니터하는 방법을 제공할 수 있다.The effect of the present invention is to select the collector-emitter current saturation voltage parameter among the DC characteristics having the closest correlation with the characteristic change factors of the device due to the impurity injection or electron beam scanning in order to improve the switching characteristics of the semiconductor element, It is possible to provide a method of monitoring the switching characteristics of a semiconductor device which can guarantee quality and can be improved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제2도는 이 발명의 실시예에 따른 반도체 소자의 스위칭 특성을 모니터하는 지점을 나타내고 있다.FIG. 2 shows a point monitoring the switching characteristics of the semiconductor device according to the embodiment of the present invention.
Claims (1)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017411A KR970077183A (en) | 1996-05-22 | 1996-05-22 | Method for monitoring switching characteristics of semiconductor devices |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960017411A KR970077183A (en) | 1996-05-22 | 1996-05-22 | Method for monitoring switching characteristics of semiconductor devices |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970077183A true KR970077183A (en) | 1997-12-12 |
Family
ID=66219823
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960017411A Withdrawn KR970077183A (en) | 1996-05-22 | 1996-05-22 | Method for monitoring switching characteristics of semiconductor devices |
Country Status (1)
Country | Link |
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KR (1) | KR970077183A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101536512B1 (en) * | 2013-03-12 | 2015-07-13 | 글로벌웨어퍼스 재팬 가부시키가이샤 | Saturation voltage estimation method and silicon epitaxial wafer manufacturing method |
-
1996
- 1996-05-22 KR KR1019960017411A patent/KR970077183A/en not_active Withdrawn
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR101536512B1 (en) * | 2013-03-12 | 2015-07-13 | 글로벌웨어퍼스 재팬 가부시키가이샤 | Saturation voltage estimation method and silicon epitaxial wafer manufacturing method |
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Legal Events
Date | Code | Title | Description |
---|---|---|---|
PA0109 | Patent application |
Patent event code: PA01091R01D Comment text: Patent Application Patent event date: 19960522 |
|
PG1501 | Laying open of application | ||
N231 | Notification of change of applicant | ||
PN2301 | Change of applicant |
Patent event date: 19990422 Comment text: Notification of Change of Applicant Patent event code: PN23011R01D |
|
PC1203 | Withdrawal of no request for examination | ||
WITN | Application deemed withdrawn, e.g. because no request for examination was filed or no examination fee was paid |