KR970077183A - Method for monitoring switching characteristics of semiconductor devices - Google Patents

Method for monitoring switching characteristics of semiconductor devices Download PDF

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Publication number
KR970077183A
KR970077183A KR1019960017411A KR19960017411A KR970077183A KR 970077183 A KR970077183 A KR 970077183A KR 1019960017411 A KR1019960017411 A KR 1019960017411A KR 19960017411 A KR19960017411 A KR 19960017411A KR 970077183 A KR970077183 A KR 970077183A
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KR
South Korea
Prior art keywords
collector
emitter current
saturation voltage
current saturation
switching characteristics
Prior art date
Application number
KR1019960017411A
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Korean (ko)
Inventor
김종민
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019960017411A priority Critical patent/KR970077183A/en
Publication of KR970077183A publication Critical patent/KR970077183A/en

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Abstract

이 발명은 반도체 소자의 특성 파라미터를 검출하는 방법중 공정상산포에 의하여 발생되는 스위칭 속도의 편차를 모니터하는 반도체 소자의 스위칭 특성을 모니터하는 방법에 관한 것이다.The present invention relates to a method of monitoring the switching characteristics of a semiconductor device which monitors the deviation of the switching speed caused by the scattering of the process among the methods of detecting the characteristic parameters of the semiconductor device.

이 발명의 구성은 컬렉터-이미터 저전류 포화전압을 읽는 단계와, 컬렉터-이미터 저전류 포화전압이 일정값보다 큰 지를 판단하는 비교단계와, 상기의 비교단계에서 컬렉터-이미터 저전류 포화전압이 일정값보다 크지 않을 경우에 단품을 불량한 것으로 결정하는 단품불량 결정단계와, 비교단계에서 컬렉터-이미터 저전류 포화전압이 일전값보다 클 경우에 단품을 양호한 것으로 결정하는 단품양호 결정단계와, 단품불량 결정단계와 단품양호 결정단계에서 결정한 스위칭 특성을 모니터에 나타내는 특성모니터 단계로 이루어진다.The method includes comparing a collector-emitter current saturation voltage, determining whether a collector-emitter current saturation voltage is greater than a predetermined value, and comparing the collector-emitter current saturation voltage with a collector- Determining whether a single product is defective if the voltage is not greater than a predetermined value; determining whether the single-component is a good product when the collector-emitter current saturation voltage is greater than the previous value in the comparison step; , And a characteristic monitoring step of displaying the switching characteristics determined in the single article defect determination step and the single article good determination step on a monitor.

이 발명의 효과는 반도체 소자이 스위칭 특성 향상을 위하여 불순물 주입이나 전자빔 주사에 따른 소자의 특성 변화 요인으로 가장 밀접한 상관 관계를 갖는 직류 특성중 컬렉터-이미터 저전류 포화전압 파라미터를 선정하여 반도체 소자의 출하 품질의 보증 및 개선할 수 있는 반도체 소자의 스위칭 특성을 모니터하는 방법을 제공할 수 있다.The effect of the present invention is to select the collector-emitter current saturation voltage parameter among the DC characteristics having the closest correlation with the characteristic change factors of the device due to the impurity injection or electron beam scanning in order to improve the switching characteristics of the semiconductor element, It is possible to provide a method of monitoring the switching characteristics of a semiconductor device which can guarantee quality and can be improved.

Description

반도체 소자의 스위칭 특성을 모니터하는 방법Method for monitoring switching characteristics of semiconductor devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제2도는 이 발명의 실시예에 따른 반도체 소자의 스위칭 특성을 모니터하는 지점을 나타내고 있다.FIG. 2 shows a point monitoring the switching characteristics of the semiconductor device according to the embodiment of the present invention.

Claims (1)

반도체 소자의 스위칭 특성을 모니터 하는 방법에 있어서, 컬렉터-이미터 저전류 포화전압을 읽는 단계와, 상기의 컬렉터-이미터 저전류 포화전압이 일정값보다 큰 지를 판단하는 비교단계와, 상기의 비교단계에서 컬렉터-이미터 저전류 포화전압이 일정값보다 크지 않을 경우에 단품을 불량한 것으로 결정하는 단품불량 결정단계와, 상기의 비교단계에서 컬렉터-이미터 저전류 포화전압이 일전값보다 클 경우에 단품을 양호한 것으로 결정하는 단품양호 결정단계와, 상기의 단품불량 결정단계와 단품양호 결정단계에서 결정한 스위칭 특성을 모니터에 나타내는 특성모니터 단계를 포함하는 것을 특징으로 하는 반도체 소자의 스위칭 특성을 모니터하는 방법.CLAIMS What is claimed is: 1. A method of monitoring switching characteristics of a semiconductor device, comprising: reading a collector-emitter current saturation voltage; comparing the collector-emitter current saturation voltage with a constant value; Determining if the collector-emitter current saturation voltage is not greater than a predetermined value, determining that the single component is defective; and if the collector-emitter current saturation voltage is greater than the previous value in the comparison step A method for monitoring a switching characteristic of a semiconductor device characterized by comprising a step of determining a single good for determining a single good and a characteristic monitoring step for monitoring the switching characteristics determined in the single bad decision and the single good decision, . ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960017411A 1996-05-22 1996-05-22 Method for monitoring switching characteristics of semiconductor devices KR970077183A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019960017411A KR970077183A (en) 1996-05-22 1996-05-22 Method for monitoring switching characteristics of semiconductor devices

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019960017411A KR970077183A (en) 1996-05-22 1996-05-22 Method for monitoring switching characteristics of semiconductor devices

Publications (1)

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KR970077183A true KR970077183A (en) 1997-12-12

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KR1019960017411A KR970077183A (en) 1996-05-22 1996-05-22 Method for monitoring switching characteristics of semiconductor devices

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101536512B1 (en) * 2013-03-12 2015-07-13 글로벌웨어퍼스 재팬 가부시키가이샤 Saturation voltage estimation method and silicon epitaxial wafer manufacturing method

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101536512B1 (en) * 2013-03-12 2015-07-13 글로벌웨어퍼스 재팬 가부시키가이샤 Saturation voltage estimation method and silicon epitaxial wafer manufacturing method

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