KR970077133A - Vertical diffusion furnace combined with oxide film growth process and LP CVD process - Google Patents

Vertical diffusion furnace combined with oxide film growth process and LP CVD process Download PDF

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Publication number
KR970077133A
KR970077133A KR1019960014644A KR19960014644A KR970077133A KR 970077133 A KR970077133 A KR 970077133A KR 1019960014644 A KR1019960014644 A KR 1019960014644A KR 19960014644 A KR19960014644 A KR 19960014644A KR 970077133 A KR970077133 A KR 970077133A
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South Korea
Prior art keywords
diffusion furnace
oxide film
inner tube
vertical diffusion
film growth
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KR1019960014644A
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Korean (ko)
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KR100227850B1 (en
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조경환
최상국
박찬식
김대우
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김광호
삼성전자 주식회사
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Publication of KR970077133A publication Critical patent/KR970077133A/en
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Publication of KR100227850B1 publication Critical patent/KR100227850B1/en

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    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45563—Gas nozzles
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/455—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for introducing gases into reaction chamber or for modifying gas flows in reaction chamber
    • C23C16/45523—Pulsed gas flow or change of composition over time

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  • Chemical & Material Sciences (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Engineering & Computer Science (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)

Abstract

본 발명은 수직형 확산로에 관한 것으로, 특히 산화막 성장 공정과 저압기상증착(LP CVD)공정을 하나의 수직형 확산로에서 선택적으로 수행할 수 있도록 한 산화막 성장공정과 LP CVD 공정 겸용 수직형 확산로에 관한 것이다.In particular, the present invention relates to a vertical diffusion furnace, and more particularly, to a vertical diffusion furnace capable of selectively performing an oxide film growth process and a low pressure vapor deposition (LP CVD) process in a single vertical diffusion furnace, .

본 발명의 목적은 산화막 성장공정과 LP CVD 공정을 단일 겸용 확산로에서 수행할 수 있도록 한 산화, LP CVD 공정 겸용 수직형 확산로를 제공하는데 있다.It is an object of the present invention to provide a vertical type diffusion furnace for both oxidation and LP CVD processes in which an oxide film growth process and an LP CVD process can be performed in a single combined diffusion furnace.

본 발명의 효과는 산화막 성장공정과 LP CVD 공정을 순차적으로 진행시 겸용 수직형 확산로를 사용하여 웨이퍼의 불필요한 이재.적재량을 감소시키고, 동일 설비를 최대한 이용하여 설비가 차지하는 점유면적을 감소시킬 수 있는 효과가 있다.The advantage of the present invention is that the vertical diffusion furnace is used to sequentially perform the oxide film growth process and the LP CVD process to reduce the amount of unnecessary materials and wafers to be loaded on the wafer and to reduce the occupied area occupied by the equipment There is an effect.

Description

산화막 성장 공정 및 LP CVD 공정 겸용 수직형 확산로Vertical diffusion furnace combined with oxide film growth process and LP CVD process

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.

제4도는 본 발명에 따른 산화막 성장공정과 LP CVD 공정 겸용 수직형 확산로의 구조를 나타낸 종단면도.FIG. 4 is a longitudinal sectional view showing the structure of a vertical diffusion furnace for both an oxide film growth process and an LP CVD process according to the present invention.

Claims (5)

상부가 개구된 내측튜브와, 상기 내측튜브와 소정 간격으로 이격되어 상기 내측튜브 전체를 둘러싸는 외측튜브와, 상기 외측튜브의 외측에 설치된 전기로와, 상기 내측튜브 하부에서 상기 내측튜브와 연동된 LP CVD 공정 가스 공급수단과, 상기 내측튜브 하부에서 상기 내측튜브와 연통된 산화막 성장공정용 가스 배출수단과, 상기 외측튜브의 하부에서 상기 외측튜브와 연통된 상기 산화막 성장 공정용 가스 공급수단과, 상기 외측튜브의 하부에서 상기 외측튜브와 연통한 상기 LP CVD공정용 가스 배출수단으로 구성된 것을 특징으로 하는 산화막 성장공정 및 LP CVD 공정 겸용 수직형 확산로.An outer tube which is spaced apart from the inner tube by a predetermined distance and surrounds the inner tube, an electric furnace provided outside the outer tube, and an LP connected to the inner tube at a lower portion of the inner tube, A CVD process gas supply means, a gas discharge means for the oxide film growth process in communication with the inner tube at the bottom of the inner tube, the gas supply means for the oxide film growth process in communication with the outer tube at the lower portion of the outer tube, And the gas exhausting means for the LP CVD process communicating with the outer tube at a lower portion of the outer tube. 제1항에 있어서, 상기 산화막 성장 공정용 가스 공급수단은 상기 외측 튜브와 상기 내측 튜브사이의 이격된 공간을 통해서 상기 내측 튜브의 상부 개구부까지 연장된 것을 특징으로 하는 산화막 성장 공정 및 LP CVD 공정 겸용 수직형 확산로.2. The method according to claim 1, wherein the oxide film growing process gas supply means extends from the outer tube to the upper opening of the inner tube through a spaced space between the outer tube and the inner tube. Vertical diffusion furnace. 제2항에 있어서, 상기 산화막 성장 공정용 가스 공급수단의 상기 상부 개구부에 대향하는 위치에 인젝터가 형성된 것을 특징으로 하는 산화막 성장 공정 및 LP CVD 공정 겸용 수직형 확산로.3. The vertical diffusion furnace according to claim 2, wherein an injector is formed at a position opposite to the upper opening of the gas supply means for growing the oxide film. 제3항에 있어서, 상기 인젝터는 상기 내측 튜브의 상기 개구부에서 상기 내측튜브 내부로 상기 산화막 성장용 가스를 하방 분사함을 특징으로 하는 산화막 성장공정과 LP CVD 공정 겸용 수직형 확산로.The vertical diffusion furnace according to claim 3, wherein the injector injects the oxide growth gas downward into the inner tube from the opening of the inner tube. 제1항에 있어서, 상기 전기로는 상기 산화막 성장공정과 LP CVD 공정에 필요한 소정의 온도를 상기 공정에 따라 가변적으로 셋팅하는 것을 특징으로 하는 산화막 성장공정 및 LP CVD 공정 겸용 수직형 확산로.The vertical diffusion furnace according to claim 1, wherein the electric furnace is configured such that a predetermined temperature necessary for the oxide film growth process and the LP CVD process is variably set according to the process. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: It is disclosed by the contents of the first application.
KR1019960014644A 1996-05-06 1996-05-06 Vertical diffusion furnace for both oxide growth process and lp cvd process KR100227850B1 (en)

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KR1019960014644A KR100227850B1 (en) 1996-05-06 1996-05-06 Vertical diffusion furnace for both oxide growth process and lp cvd process

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KR970077133A true KR970077133A (en) 1997-12-12
KR100227850B1 KR100227850B1 (en) 1999-11-01

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