KR970072398A - Semiconductor device and manufacturing method thereof - Google Patents
Semiconductor device and manufacturing method thereof Download PDFInfo
- Publication number
- KR970072398A KR970072398A KR1019960010286A KR19960010286A KR970072398A KR 970072398 A KR970072398 A KR 970072398A KR 1019960010286 A KR1019960010286 A KR 1019960010286A KR 19960010286 A KR19960010286 A KR 19960010286A KR 970072398 A KR970072398 A KR 970072398A
- Authority
- KR
- South Korea
- Prior art keywords
- forming
- substrate
- region
- semiconductor substrate
- impurity
- Prior art date
Links
- 239000004065 semiconductor Substances 0.000 title claims abstract description 19
- 238000004519 manufacturing process Methods 0.000 title claims abstract 3
- 239000000758 substrate Substances 0.000 claims abstract 23
- 239000012535 impurity Substances 0.000 claims abstract 14
- 238000000034 method Methods 0.000 claims abstract 6
- 238000002513 implantation Methods 0.000 claims abstract 5
- 238000002955 isolation Methods 0.000 claims abstract 3
- 239000002184 metal Substances 0.000 claims abstract 3
- 229910052751 metal Inorganic materials 0.000 claims abstract 3
- 150000002500 ions Chemical class 0.000 claims abstract 2
- 150000004767 nitrides Chemical class 0.000 claims abstract 2
- 229910021420 polycrystalline silicon Inorganic materials 0.000 claims abstract 2
- 229920005591 polysilicon Polymers 0.000 claims abstract 2
- PXHVJJICTQNCMI-UHFFFAOYSA-N Nickel Chemical compound [Ni] PXHVJJICTQNCMI-UHFFFAOYSA-N 0.000 claims 3
- BASFCYQUMIYNBI-UHFFFAOYSA-N platinum Chemical compound [Pt] BASFCYQUMIYNBI-UHFFFAOYSA-N 0.000 claims 3
- 239000010949 copper Substances 0.000 claims 2
- 239000010936 titanium Substances 0.000 claims 2
- RYGMFSIKBFXOCR-UHFFFAOYSA-N Copper Chemical compound [Cu] RYGMFSIKBFXOCR-UHFFFAOYSA-N 0.000 claims 1
- ZOKXTWBITQBERF-UHFFFAOYSA-N Molybdenum Chemical compound [Mo] ZOKXTWBITQBERF-UHFFFAOYSA-N 0.000 claims 1
- RTAQQCXQSZGOHL-UHFFFAOYSA-N Titanium Chemical compound [Ti] RTAQQCXQSZGOHL-UHFFFAOYSA-N 0.000 claims 1
- 229910017052 cobalt Inorganic materials 0.000 claims 1
- 239000010941 cobalt Substances 0.000 claims 1
- GUTLYIVDDKVIGB-UHFFFAOYSA-N cobalt atom Chemical compound [Co] GUTLYIVDDKVIGB-UHFFFAOYSA-N 0.000 claims 1
- 229910052802 copper Inorganic materials 0.000 claims 1
- 238000005468 ion implantation Methods 0.000 claims 1
- QSHDDOUJBYECFT-UHFFFAOYSA-N mercury Chemical compound [Hg] QSHDDOUJBYECFT-UHFFFAOYSA-N 0.000 claims 1
- 229910052753 mercury Inorganic materials 0.000 claims 1
- 229910052750 molybdenum Inorganic materials 0.000 claims 1
- 239000011733 molybdenum Substances 0.000 claims 1
- 229910052759 nickel Inorganic materials 0.000 claims 1
- 229910052697 platinum Inorganic materials 0.000 claims 1
- 125000006850 spacer group Chemical group 0.000 claims 1
- JBQYATWDVHIOAR-UHFFFAOYSA-N tellanylidenegermanium Chemical compound [Te]=[Ge] JBQYATWDVHIOAR-UHFFFAOYSA-N 0.000 claims 1
- 229910052719 titanium Inorganic materials 0.000 claims 1
- WFKWXMTUELFFGS-UHFFFAOYSA-N tungsten Chemical compound [W] WFKWXMTUELFFGS-UHFFFAOYSA-N 0.000 claims 1
- 229910052721 tungsten Inorganic materials 0.000 claims 1
- 239000010937 tungsten Substances 0.000 claims 1
- XUIMIQQOPSSXEZ-UHFFFAOYSA-N Silicon Chemical compound [Si] XUIMIQQOPSSXEZ-UHFFFAOYSA-N 0.000 abstract 1
- 239000012212 insulator Substances 0.000 abstract 1
- 229910052710 silicon Inorganic materials 0.000 abstract 1
- 239000010703 silicon Substances 0.000 abstract 1
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/70—Manufacture or treatment of devices consisting of a plurality of solid state components formed in or on a common substrate or of parts thereof; Manufacture of integrated circuit devices or of parts thereof
- H01L21/77—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate
- H01L21/78—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices
- H01L21/82—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components
- H01L21/822—Manufacture or treatment of devices consisting of a plurality of solid state components or integrated circuits formed in, or on, a common substrate with subsequent division of the substrate into plural individual devices to produce devices, e.g. integrated circuits, each consisting of a plurality of components the substrate being a semiconductor, using silicon technology
- H01L21/8222—Bipolar technology
- H01L21/8228—Complementary devices, e.g. complementary transistors
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L27/00—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
- H01L27/02—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers
- H01L27/04—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body
- H01L27/08—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind
- H01L27/082—Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components specially adapted for rectifying, oscillating, amplifying or switching and having potential barriers; including integrated passive circuit elements having potential barriers the substrate being a semiconductor body including only semiconductor components of a single kind including bipolar components only
Landscapes
- Engineering & Computer Science (AREA)
- Power Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Manufacturing & Machinery (AREA)
- Metal-Oxide And Bipolar Metal-Oxide Semiconductor Integrated Circuits (AREA)
Abstract
에너지 준위가 실리콘 포비든 밴드(forbiden band)내에 있는 불순물을 주입하여 CMOS에서 발생되는 바이폴라 동작의 이득율을 저하시킴으로써, LATCH-UP 현상을 억제시키기 위한 반도체 장치 및 그 제조방법을 개시한다. 이와같은 본 발명에 따른 반도체 장치는 반도체 기판, 상기 기판 상에 섬 모양으로 형성된 소자 분리막, 상기 기판의 표면 근방에 형성된 P＋ 영역과 N＋ 영역, 상기 기판 상에 게이트 절연막과 폴리 실리콘 및 절연막이 구비되고 양측벽이 스페이서로 감싸여진 게이트 전극, 상기 게이트 전극을 절연하는 절연막, 상기 노출된 기판 전면에 형성된 금속층 및, 상기 기판 내부의 소정영역에 불순물 이온 주입으로 형성된 불순물 주입층을 포함하여 이루어지고 그 제조방법은, 반도체 기판 상에 절연막 및 질화막을 순차적으로 형성하는 공정, 상기 반도체 기판 상에 웰을 형성하는 공정, 상기 반도체 기판 내에 NMOS 트랜지스턴간의 격리를 목적으로 하는 로커스 공정의 일부분으로서 채널 스톱 인플란테이션을 실시하는 공정, 상기 반도체 기판 내에 NMOS 및 PMOS의 문턱 전압(Threshold Voitage)을 조절해주는 이온 주입 공정, 상기 반도체 기판 상에 형성된 게이트 전극 측면에 LDD를 형성하는 공정, 상기 웰 영역내에 래치 업 방지를 위한 불순물층 형성 및 N＋ 영역 및 P＋ 영역을 형성하는 공정 및, 금속 배선층을 형성하는 공정을 포함하여 이루어진다.Disclosed is a semiconductor device and a manufacturing method thereof for suppressing a LATCH-UP phenomenon by lowering a gain rate of a bipolar operation generated in a CMOS by injecting an impurity having an energy level in a silicon forbidden band. The semiconductor device according to the present invention includes a semiconductor substrate, an element isolation film formed in an island shape on the substrate, a P + region and an N + region formed in the vicinity of the surface of the substrate, a gate insulating film, polysilicon and an insulating film on the substrate And an impurity implantation layer formed by implanting impurity ions into a predetermined region in the substrate, wherein the impurity implantation layer is formed by implanting impurities into the semiconductor substrate, The method includes the steps of sequentially forming an insulating film and a nitride film on a semiconductor substrate, forming a well on the semiconductor substrate, and forming a channel stop insulator as a part of a locus process for isolating NMOS transistors in the semiconductor substrate, Performing NMOS and PMOS in the semiconductor substrate; Forming an LDD on the side of the gate electrode formed on the semiconductor substrate; forming an impurity layer for preventing latch-up in the well region and forming an N + region and a P + region in the well region; And a step of forming a metal wiring layer.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제3도는 본 발명에 의한 반도체 장치를 나타낸 단면도.FIG. 3 is a cross-sectional view showing a semiconductor device according to the present invention. FIG.
Claims (5)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960010286A KR100205347B1 (en) | 1996-04-04 | 1996-04-04 | Semiconductro and method of fabricating it |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019960010286A KR100205347B1 (en) | 1996-04-04 | 1996-04-04 | Semiconductro and method of fabricating it |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970072398A true KR970072398A (en) | 1997-11-07 |
| KR100205347B1 KR100205347B1 (en) | 1999-07-01 |
Family
ID=19455135
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019960010286A KR100205347B1 (en) | 1996-04-04 | 1996-04-04 | Semiconductro and method of fabricating it |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100205347B1 (en) |
-
1996
- 1996-04-04 KR KR1019960010286A patent/KR100205347B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR100205347B1 (en) | 1999-07-01 |
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