KR970072172A - A method of manufacturing a semiconductor device using a diffusion barrier film as a gate insulating film - Google Patents
A method of manufacturing a semiconductor device using a diffusion barrier film as a gate insulating film Download PDFInfo
- Publication number
- KR970072172A KR970072172A KR1019960009677A KR19960009677A KR970072172A KR 970072172 A KR970072172 A KR 970072172A KR 1019960009677 A KR1019960009677 A KR 1019960009677A KR 19960009677 A KR19960009677 A KR 19960009677A KR 970072172 A KR970072172 A KR 970072172A
- Authority
- KR
- South Korea
- Prior art keywords
- material layer
- oxide film
- gate oxide
- forming
- film
- Prior art date
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Abstract
게이트 절연막으로 확산방지막을 사용하는 반도체장치의 제조방법이 개시되어 있다. 본 발명은 반도체기판상에 게이트 산화막을 형성하는 단계, 상기 게이트 산화막이 형성된 기판 전면에 제1물질층을 형성하는 단계, 및 상기 제1물질층을 도우핑시킨 후 이를 패터닝하여 게이트 전극을 형성하는 단계를 구비하는 반도체장치의 제조방법에 있어서, 상기 제1물질층을 형성하는 단계 이후에, 상기 게이트 산화막과 인접하는 상기 제1물질층의 하단부에 최대 농도를 갖도록 질소 이온을 주입하는 단계; 및 상기 결과물을 열처리하여 상기 질소 이온을 확산시킴으로써, 상기 게이트 산화막을 확산방지막으로 변형시키는 단계를 더 구비하는 것을 특징으로 하는 반도체장치의 제조방법을 제공한다. 본 발명에 의하면, 누설전류 및 내압 특성이 우수한 게이트 절연막을 형성할 수 있어 트랜지스터 특성을 개선시킬 수 있다.A method of manufacturing a semiconductor device using a diffusion prevention film as a gate insulating film is disclosed. The present invention provides a method of manufacturing a semiconductor device, comprising: forming a gate oxide film on a semiconductor substrate; forming a first material layer on the entire surface of the substrate on which the gate oxide film is formed; and dipping and patterning the first material layer to form a gate electrode Implanting nitrogen ions so as to have a maximum concentration at a lower end of the first material layer adjacent to the gate oxide film after forming the first material layer; And annealing the resultant to diffuse the nitrogen ions, thereby transforming the gate oxide film into a diffusion prevention film. According to the present invention, a gate insulating film having excellent leakage current and withstand voltage characteristics can be formed, and the transistor characteristics can be improved.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is a trivial issue, I did not include the contents of the text.
제1도 내지 제3도는 본 발명에 의한 반도체장치의 제조방법을 설명하기 위한 단면도들이다.FIGS. 1 to 3 are cross-sectional views illustrating a method of manufacturing a semiconductor device according to the present invention.
Claims (3)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960009677A KR970072172A (en) | 1996-04-01 | 1996-04-01 | A method of manufacturing a semiconductor device using a diffusion barrier film as a gate insulating film |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019960009677A KR970072172A (en) | 1996-04-01 | 1996-04-01 | A method of manufacturing a semiconductor device using a diffusion barrier film as a gate insulating film |
Publications (1)
Publication Number | Publication Date |
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KR970072172A true KR970072172A (en) | 1997-11-07 |
Family
ID=66222883
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019960009677A KR970072172A (en) | 1996-04-01 | 1996-04-01 | A method of manufacturing a semiconductor device using a diffusion barrier film as a gate insulating film |
Country Status (1)
Country | Link |
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KR (1) | KR970072172A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100731070B1 (en) * | 2005-12-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | Method for fabricating gate electrode of semiconductor device |
-
1996
- 1996-04-01 KR KR1019960009677A patent/KR970072172A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100731070B1 (en) * | 2005-12-28 | 2007-06-22 | 동부일렉트로닉스 주식회사 | Method for fabricating gate electrode of semiconductor device |
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