KR970055229A - Stable Reference Voltage Generation Circuit for Thermal Shutdown (TSD) - Google Patents

Stable Reference Voltage Generation Circuit for Thermal Shutdown (TSD) Download PDF

Info

Publication number
KR970055229A
KR970055229A KR1019950068628A KR19950068628A KR970055229A KR 970055229 A KR970055229 A KR 970055229A KR 1019950068628 A KR1019950068628 A KR 1019950068628A KR 19950068628 A KR19950068628 A KR 19950068628A KR 970055229 A KR970055229 A KR 970055229A
Authority
KR
South Korea
Prior art keywords
reference voltage
tsd
bias current
initial
bias
Prior art date
Application number
KR1019950068628A
Other languages
Korean (ko)
Other versions
KR0153052B1 (en
Inventor
한진섭
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950068628A priority Critical patent/KR0153052B1/en
Publication of KR970055229A publication Critical patent/KR970055229A/en
Application granted granted Critical
Publication of KR0153052B1 publication Critical patent/KR0153052B1/en

Links

Classifications

    • G—PHYSICS
    • G05—CONTROLLING; REGULATING
    • G05F—SYSTEMS FOR REGULATING ELECTRIC OR MAGNETIC VARIABLES
    • G05F3/00—Non-retroactive systems for regulating electric variables by using an uncontrolled element, or an uncontrolled combination of elements, such element or such combination having self-regulating properties
    • G05F3/02—Regulating voltage or current
    • G05F3/08—Regulating voltage or current wherein the variable is dc
    • G05F3/10—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics
    • G05F3/16—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices
    • G05F3/20—Regulating voltage or current wherein the variable is dc using uncontrolled devices with non-linear characteristics being semiconductor devices using diode- transistor combinations
    • G05F3/26—Current mirrors
    • G05F3/265—Current mirrors using bipolar transistors only

Landscapes

  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Physics & Mathematics (AREA)
  • Nonlinear Science (AREA)
  • Electromagnetism (AREA)
  • General Physics & Mathematics (AREA)
  • Radar, Positioning & Navigation (AREA)
  • Automation & Control Theory (AREA)
  • Control Of Electrical Variables (AREA)

Abstract

본 발명은 입력 전압에 의해서 기준 전압 회로부의 동작을 결정하고 기준 전압 회로부에서 저항으로 초기 바이어스가 설정된 트랜지스터에 온도 증가에 따른 TSD동작 이후에도 바이어스 전류를 공급하여 기준전압 회로부가 TSD이후에도 안정한 기준 전압을 유지할 수 있도록 한 열적 차단(TSD)에 안정한 기준전압 발생회로에 관한 것인 바, 그 특징은 입력신호에 의해서 기준전압 회로에 초기 제1바이어스 전류를 공급하는 입력신호에 의해서 초기 동작을 결정하기 위한 제1바이어스 전류를 기준전압 발생회로에 공급하는 기준전압 설정용 바이어스전류 공급수단과 상기 제1바이어스 전류에 의해서 일정한 기준전압을 유지해주는 기준전압 발생수단과 열적 상승시에 일정온도에서 동작하여 상기 기준전압 발생수단으로 공급되는 제1바이어스 전류를 차단하면서 TSD가 실시되는 일정온도에서 상기 기준전압 설정용 바이어스전류 공급수단의, 입력신호를 차단시키는 TSD수단과 TSD가 실시되는 일정온도에서 피드백 전류를 발생시켜 상기 기준전압 발생수단에 제2바이어스 전류를 공급하는 기준전압 발생 제어수단으로 구성함에 있다.The present invention determines the operation of the reference voltage circuit unit by the input voltage and supplies a bias current to the transistor whose initial bias is set as a resistance in the reference voltage circuit unit even after the TSD operation according to the temperature increase, so that the reference voltage circuit unit maintains a stable reference voltage even after the TSD. A reference voltage generating circuit which is stable to a thermal cut-off (TSD), which is characterized in that the first signal for supplying an initial first bias current to the reference voltage circuit by an input signal is determined by the first signal for determining the initial operation. A bias current supply means for setting a reference voltage for supplying a 1 bias current to the reference voltage generating circuit, a reference voltage generating means for maintaining a constant reference voltage by the first bias current, and operating at a constant temperature during thermal rise to generate the reference voltage To isolate the first bias current supplied to the While generating a feedback current at the constant temperature at which the TSD is applied and the TSD means for interrupting the input signal of the reference voltage setting bias current supply means at a constant temperature at which the TSD is applied to supply a second bias current to the reference voltage generating means. The reference voltage generation control means for supplying.

Description

열적 차단(TSD)에 안정한 기준전압 발생회로Stable Reference Voltage Generation Circuit for Thermal Shutdown (TSD)

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명의 일 실시예에 의한 TSD에 안정한 기준전압 발생회로의 블록도.3 is a block diagram of a reference voltage generation circuit stable to a TSD according to an embodiment of the present invention.

Claims (4)

입력신호에 의해서 초기 동작을 결정하기 위한 제1바이어스 전류를 기준전압 발생회로에 공급하는 기준전압 설정용 바이어스 전류 공급수단과 상기 제1바이어스 전류에 의해서 일정한 기준전압을 유지해주는 기준전압 발생수단과, 열적 상승시에 일정온도에서 동작하여 상기 기준전압 발생수단으로 공급되는 제1바이어스 전류를 차단하면서 TSD가 실시되는 일정 온도에서 상기 기준전압 설정용 바이어스전류 공급수단의 입력신호를 차단시키는 TSD 수단과, TSD가 실시되는 일정 온도에서 피드백 전류를 발생시켜 상기 기준전압 발생수단에 제2바이어스 전류를 공급하는 기준전압 발생 제어수단으로 구성함을 특징으로 하는 열적 차단(TSD)에 안정한 기준전압 발생회로.A bias current supply means for setting a reference voltage for supplying a first bias current for determining an initial operation by an input signal to a reference voltage generator circuit, and reference voltage generator for maintaining a constant reference voltage by the first bias current; TSD means for blocking the input signal of the reference voltage setting bias current supply means at a predetermined temperature during TSD while blocking the first bias current supplied to the reference voltage generating means by operating at a constant temperature during thermal rise; And a reference voltage generation control means for generating a feedback current at a predetermined temperature and supplying a second bias current to the reference voltage generation means. 제1항에 있어서, 상기 기준전압 발생제어수단과 TSD 수단은 구동단 트랜지스터(Q7)(Q10)의 초기 바이어스 전압(Vbe(Q7))(Vbe(Q10))을 기준전압(Vref)을 저항으로 분배하여 설정함을 특징으로 하는 열적 차단(TSD)에 안정한 기준전압 발생회로.2. The control circuit of claim 1, wherein the reference voltage generation control means and the TSD means use the initial bias voltages Vbe (Q7) and Vbe (Q10) of the driving transistors Q7 and Q10 as reference resistances Vref. A reference voltage generating circuit stable to thermal cutoff (TSD), characterized in that the distribution is set. 제1항 또는 제2항에 있어서, 상기 기준전압 발생제어수단과 TSD 수단은 구동단 트랜지스터(Q7)(Q10)의 초기 바이어스 전압(Vbe(Q7))(Vbe(Q10))을 상온에서 트랜지스터가 턴-온하지 않게 설정함을 특징으로 하는 열적 차단(TSD)에 안정한 기준전압 발생회로.The method of claim 1 or claim 2, wherein the reference voltage generation control means and the TSD means for the initial bias voltage (Vbe (Q7)) (Vbe (Q10)) of the driving transistor (Q7) (Q10) transistors at room temperature. A stable reference voltage generator circuit for thermal shutdown (TSD), characterized in that it is set not to turn on. 제1항 또는 제2항 또는 제3항에 있어서, 상기 기준전압 발생제어수단의 트랜지스터의 초기 바이어스 전압을 TSD가 실시되는 일정 온도(T2)보다 낮은 임의의 온도(T1)에서 턴-온하게 설정하고 TSD 수단의 구동단 트랜지스터(Q10)의 초기 바이어스 전압이 TSD가 실시되는 일정 온도(T2)에서 턴-온하게 설정하여 두 온도 차이를 이용하여 기준전압 발생제어수단에서 기준전압 발생수단으로 궤환전류(I2)를 피드백시켜 TSD이후에도 기준전압을 일정하게 유지시키는 것을 특징으로 하는 열적 차단(TSD)에 안정한 기준전압 발생회로.4. An initial bias voltage of the transistor of the reference voltage generation control means is set to be turned on at an arbitrary temperature T1 lower than a predetermined temperature T2 at which the TSD is performed. And set the initial bias voltage of the driving stage transistor Q10 of the TSD means to be turned on at a constant temperature T2 at which the TSD is applied, and returning the reference current from the reference voltage generating control means to the reference voltage generating means using the two temperature differences. A reference voltage generating circuit stable to thermal cutoff (TSD), characterized by feeding back (I2) to maintain a constant reference voltage even after TSD. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950068628A 1995-12-30 1995-12-30 Stable reference voltage generator for thermal isolation KR0153052B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950068628A KR0153052B1 (en) 1995-12-30 1995-12-30 Stable reference voltage generator for thermal isolation

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950068628A KR0153052B1 (en) 1995-12-30 1995-12-30 Stable reference voltage generator for thermal isolation

Publications (2)

Publication Number Publication Date
KR970055229A true KR970055229A (en) 1997-07-31
KR0153052B1 KR0153052B1 (en) 1998-12-15

Family

ID=19448150

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950068628A KR0153052B1 (en) 1995-12-30 1995-12-30 Stable reference voltage generator for thermal isolation

Country Status (1)

Country Link
KR (1) KR0153052B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150003087A (en) * 2013-06-28 2015-01-08 주식회사 라온텍 Reference current generation circuit and voltage controlled oscillator device equipped with the same

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20150003087A (en) * 2013-06-28 2015-01-08 주식회사 라온텍 Reference current generation circuit and voltage controlled oscillator device equipped with the same

Also Published As

Publication number Publication date
KR0153052B1 (en) 1998-12-15

Similar Documents

Publication Publication Date Title
KR910019056A (en) Substrate Voltage Generation Circuit in Semiconductor Device with Internal Step-Down Power Supply Voltage
KR910020738A (en) Semiconductor integrated circuit device
KR930020449A (en) Internal power supply voltage generation circuit
KR0157045B1 (en) Band-gap reference voltage circuit and reference voltage supplying method
KR910002065A (en) Circuit Limiting Internal Current in High-Speed, High Potential Power Switches
KR950025774A (en) A reference potential generating circuit for generating a more stable reference potential, a potential detecting circuit for determining whether the detected potential reaches a predetermined level, and a semiconductor integrated circuit device having the same
KR950021505A (en) Reference current generating circuit, constant current generating circuit and the device using the same
KR950006848A (en) Reference potential generating circuit
KR910005730A (en) Circuit device for load supply
KR970003191A (en) Reference voltage generation circuit of semiconductor memory device
JP4397562B2 (en) Bandgap reference circuit
KR870009494A (en) Power supply voltage detection circuit
KR900013520A (en) BiCMOS reference network and reference voltage generation method
KR970055229A (en) Stable Reference Voltage Generation Circuit for Thermal Shutdown (TSD)
KR950033753A (en) Isolated Switching Power Supply
KR920019088A (en) Reference voltage generator
KR930020847A (en) Reference current generating circuit
KR940023028A (en) Voltage / Current Conversion Circuit Using Metal Oxide Semiconductor (MOS) Transistors
KR870008241A (en) Constant current supply circuit
KR930020658A (en) Reference voltage generator
KR920010579B1 (en) Stabilizing circuit of standard level voltage
KR100815189B1 (en) Reference voltage generator in semiconductor memory device
KR950702075A (en) CMOS CURRENT STEERING CIRCUIT
KR970012061A (en) Parasitic transistor operation prevention constant voltage controller
KR970049213A (en) Constant current switching circuit

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20120629

Year of fee payment: 15

FPAY Annual fee payment

Payment date: 20130628

Year of fee payment: 16

LAPS Lapse due to unpaid annual fee