KR970054582A - 제2고조파 발생소자 - Google Patents

제2고조파 발생소자 Download PDF

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Publication number
KR970054582A
KR970054582A KR1019950069312A KR19950069312A KR970054582A KR 970054582 A KR970054582 A KR 970054582A KR 1019950069312 A KR1019950069312 A KR 1019950069312A KR 19950069312 A KR19950069312 A KR 19950069312A KR 970054582 A KR970054582 A KR 970054582A
Authority
KR
South Korea
Prior art keywords
harmonic generating
generating element
substrate
harmonic
present
Prior art date
Application number
KR1019950069312A
Other languages
English (en)
Other versions
KR0166907B1 (ko
Inventor
진용성
윤두협
Original Assignee
구자홍
Lg 전자주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Application filed by 구자홍, Lg 전자주식회사 filed Critical 구자홍
Priority to KR1019950069312A priority Critical patent/KR0166907B1/ko
Publication of KR970054582A publication Critical patent/KR970054582A/ko
Application granted granted Critical
Publication of KR0166907B1 publication Critical patent/KR0166907B1/ko

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/48—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor body packages
    • H01L33/58—Optical field-shaping elements
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/02—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies
    • H01L33/04—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the semiconductor bodies with a quantum effect structure or superlattice, e.g. tunnel junction
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L33/00—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof
    • H01L33/44—Semiconductor devices having potential barriers specially adapted for light emission; Processes or apparatus specially adapted for the manufacture or treatment thereof or of parts thereof; Details thereof characterised by the coatings, e.g. passivation layer or anti-reflective coating

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Power Engineering (AREA)
  • Optical Integrated Circuits (AREA)
  • Optical Modulation, Optical Deflection, Nonlinear Optics, Optical Demodulation, Optical Logic Elements (AREA)
  • Optical Head (AREA)

Abstract

본 발명은 제2고조파 발생소자에 관한 것으로, 제2고조파 발생효율을 증가시킴으로써 고밀도 초소형 광픽업장치의 광원으로 사용이 적합하도록 한 것이다.
본 발명에 따른 제2고조파 발생소자는 분극반전층이 형성된 기판위의 광도파로위에 굴절율이 큰 클래드층이 형성된 구성으로 되어 있다.

Description

제2고조파 발생소자
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제6도는 본 발명에 따른 제2고조파 발생소자의 개략도.

Claims (2)

  1. 분극반전층이 형성된 기판위의 광도파로위에 기판보다 굴절율이 큰 클래드층이 형성된 것을 특징으로 하는 제2고조파 발생소자.
  2. 제1항에 있어서, 상기 클래드층은 Al2O3또는 리튬탄탈레이트중 1종으로 형성된 것을 특징으로 하는 제2고조파 발생장치.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950069312A 1995-12-30 1995-12-30 제 2 고조파 발생소자 KR0166907B1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950069312A KR0166907B1 (ko) 1995-12-30 1995-12-30 제 2 고조파 발생소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950069312A KR0166907B1 (ko) 1995-12-30 1995-12-30 제 2 고조파 발생소자

Publications (2)

Publication Number Publication Date
KR970054582A true KR970054582A (ko) 1997-07-31
KR0166907B1 KR0166907B1 (ko) 1999-01-15

Family

ID=19448407

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950069312A KR0166907B1 (ko) 1995-12-30 1995-12-30 제 2 고조파 발생소자

Country Status (1)

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KR (1) KR0166907B1 (ko)

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR20190097940A (ko) 2018-02-13 2019-08-21 효성화학 주식회사 난연성이 개선된 폴리케톤 복합 조성물

Also Published As

Publication number Publication date
KR0166907B1 (ko) 1999-01-15

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