KR970054540A - Transistor with Zener Diode and Manufacturing Method Thereof - Google Patents

Transistor with Zener Diode and Manufacturing Method Thereof Download PDF

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KR970054540A
KR970054540A KR1019950055605A KR19950055605A KR970054540A KR 970054540 A KR970054540 A KR 970054540A KR 1019950055605 A KR1019950055605 A KR 1019950055605A KR 19950055605 A KR19950055605 A KR 19950055605A KR 970054540 A KR970054540 A KR 970054540A
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conductivity type
transistor
region
high concentration
impurity layer
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KR1019950055605A
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KR0170200B1 (en
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윤영식
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김광호
삼성전자 주식회사
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/80—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier
    • H01L29/812—Field effect transistors with field effect produced by a PN or other rectifying junction gate, i.e. potential-jump barrier with a Schottky gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/02—Semiconductor bodies ; Multistep manufacturing processes therefor
    • H01L29/06—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions
    • H01L29/10—Semiconductor bodies ; Multistep manufacturing processes therefor characterised by their shape; characterised by the shapes, relative sizes, or dispositions of the semiconductor regions ; characterised by the concentration or distribution of impurities within semiconductor regions with semiconductor regions connected to an electrode not carrying current to be rectified, amplified or switched and such electrode being part of a semiconductor device which comprises three or more electrodes
    • H01L29/1025—Channel region of field-effect devices
    • H01L29/1029—Channel region of field-effect devices of field-effect transistors
    • H01L29/1058—Channel region of field-effect devices of field-effect transistors with PN junction gate
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/66007—Multistep manufacturing processes
    • H01L29/66075—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials
    • H01L29/66227—Multistep manufacturing processes of devices having semiconductor bodies comprising group 14 or group 13/15 materials the devices being controllable only by the electric current supplied or the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched, e.g. three-terminal devices
    • H01L29/66409—Unipolar field-effect transistors
    • H01L29/66477—Unipolar field-effect transistors with an insulated gate, i.e. MISFET
    • H01L29/66568—Lateral single gate silicon transistors
    • H01L29/66575—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate
    • H01L29/6659—Lateral single gate silicon transistors where the source and drain or source and drain extensions are self-aligned to the sides of the gate with both lightly doped source and drain extensions and source and drain self-aligned to the sides of the gate, e.g. lightly doped drain [LDD] MOSFET, double diffused drain [DDD] MOSFET
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/68—Types of semiconductor device ; Multistep manufacturing processes therefor controllable by only the electric current supplied, or only the electric potential applied, to an electrode which does not carry the current to be rectified, amplified or switched
    • H01L29/76—Unipolar devices, e.g. field effect transistors
    • H01L29/772—Field effect transistors
    • H01L29/78—Field effect transistors with field effect produced by an insulated gate
    • H01L29/7833—Field effect transistors with field effect produced by an insulated gate with lightly doped drain or source extension, e.g. LDD MOSFET's; DDD MOSFET's
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L29/00—Semiconductor devices specially adapted for rectifying, amplifying, oscillating or switching and having potential barriers; Capacitors or resistors having potential barriers, e.g. a PN-junction depletion layer or carrier concentration layer; Details of semiconductor bodies or of electrodes thereof ; Multistep manufacturing processes therefor
    • H01L29/66—Types of semiconductor device ; Multistep manufacturing processes therefor
    • H01L29/86—Types of semiconductor device ; Multistep manufacturing processes therefor controllable only by variation of the electric current supplied, or only the electric potential applied, to one or more of the electrodes carrying the current to be rectified, amplified, oscillated or switched
    • H01L29/861—Diodes
    • H01L29/866—Zener diodes

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Ceramic Engineering (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Manufacturing & Machinery (AREA)
  • Bipolar Integrated Circuits (AREA)
  • Bipolar Transistors (AREA)

Abstract

제너 다이오드를 구비한 트랜지스터 및 그 제조방법에 관하여 기재하고 있다. 이는, 고농도 제1 도전형 및 저농도 제1 도전형의 불순물층을 차례로 적층하여 이루어진 고농도 및 저농도 콜렉터영역, 상기 저농도 콜렉터영역 상에 형성되고, 제2 도전형의 불순물층으로 이루어진 베이스영역, 상기 베이스영역 내에 형성되고, 고농도 제1 도전형의 불순물층으로 이루어진 에미터영역을 구비하는 트랜지스터에 있어서, 상기 저농도 콜렉터영역 내에, 상기 베이스영역 및 상기 고농도 콜렉터영역과 접합을 이루도록 형성되어 제너 다이오드의 에노드로 사용될 고농도 제2 도전형의 불순물 영역을 구비하는 것을 특징으로 한다. 본 발명에 따른 트랜지스터 및 그 제조방법에 따르면, 종래와는 달리 장시간의 확산공정 없이 고농도 PN 접합을 형성할 수 있기 때문에, 종래에 비해 생산성을 향상시킬 수 있으며, 제조원가를 절감할 수 있다.A transistor having a zener diode and a method of manufacturing the same are described. It is formed on the high concentration and low concentration collector region, the low concentration collector region formed by sequentially stacking a high concentration first conductivity type and a low concentration first conductivity type impurity layer, and a base region consisting of a second conductivity type impurity layer, the base A transistor formed in a region and having an emitter region formed of an impurity layer of a high concentration first conductivity type, wherein the transistor is formed in the low concentration collector region to be in contact with the base region and the high concentration collector region to form an anode of a Zener diode. And a high concentration second impurity region to be used. According to the transistor according to the present invention and a manufacturing method thereof, unlike the conventional method, since a high concentration PN junction can be formed without a long diffusion process, productivity can be improved and manufacturing cost can be reduced as compared with the conventional method.

Description

제너 다이오드를 구비한 트랜지스터 및 그 제조방법Transistor with Zener Diode and Manufacturing Method Thereof

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3도는 본 발명의 일 실시예에 따른 제너 다이오드를 설명하기 위해 도시한 단면도이다.3 is a cross-sectional view illustrating a zener diode according to an embodiment of the present invention.

Claims (4)

고농도 제1 도전형 및 저농도 제1 도전형의 불순물층을 차례로 적층하여 이루어진 고농도 및 저농도 콜렉터영역; 상기 저농도 콜렉터영역 상에 형성되고, 제2 도전형의 불순물층으로 이루어진 베이스영역; 상기 베이스영역 내에 형성되고, 고농도 제1 도전형의 불순물층으로 이루어진 에미터영역을 구비하는 트랜지스터에 있어서, 상기 저농도 콜렉터영역 내에, 상기 베이스영역 및 상기 고농도 콜렉터영역과 접합을 이루도록 형성되어 제너 다이오드의 에노드로 사용될 고농도 제2 도전형의 불순물 영역을 구비하는 것을 특징으로 하는 트랜지스터.A high concentration and low concentration collector region formed by sequentially stacking an impurity layer of a high concentration first conductivity type and a low concentration first conductivity type; A base region formed on the low concentration collector region and comprising an impurity layer of a second conductivity type; A transistor formed in the base region and having an emitter region formed of an impurity layer of a high concentration first conductivity type, wherein the transistor is formed in the low concentration collector region to be in contact with the base region and the high concentration collector region. A transistor comprising a high concentration second impurity region to be used as an anode. 고농도 및 저농도 제1 도전형의 불순물층이 적층되어 형성된 반도체 기판에, 고농도 제2 도전형의 불순물을 선택적으로 증착한 다음 확산시켜 저농도 제1도전형의 불순물층의 소정영역에 고농도 제2도전형의 불순물층을 형성하는 제1단계; 고농도 불순물층이 형성된 상기 결과물 상에 상기 저농도 제1 도전형의 불순물층과 동일 도전형, 동일 농도를 갖는 에피층을 형성하는 제2단계; 상기 에피층 내에 제2 도전형의 불순물을 선택적으로 증착한 다음 확산시켜 트랜지스터의 베이스영역을 형성하는 제3단계 : 및 상기 베이스영역 내에 제1 도전형의 불순물을 선택적으로 증착한 다음 확산시켜 트랜지스터의 에미터영역을 형성하는 제4단계를 구비하는 것을 특징으로 하는 트랜지스터 제조방법.On the semiconductor substrate formed by stacking the high concentration and low concentration of the first conductivity type impurity layer, the high concentration second conductivity type impurity is selectively deposited and then diffused, so that the high concentration second conductivity type is formed in a predetermined region of the low concentration first conductivity type impurity layer. A first step of forming an impurity layer of; A second step of forming an epitaxial layer having the same conductivity type and same concentration as that of the low concentration first conductivity type impurity layer on the resultant on which the high concentration impurity layer is formed; Selectively depositing a second conductivity type impurity in the epitaxial layer and then diffusing to form a base region of the transistor; and selectively depositing and diffusing a first conductivity type impurity in the base region of the transistor And a fourth step of forming an emitter region. 제2항에 있어서, 상기 제1 단계에서의 고농도 제2 도전형의 불순물층 형성시, 고농도 제1 도전형의 콜렉터영역과 접합을 이루도록 형성하는 것을 특징으로 하는 트랜지스터 제조방법.The method of manufacturing a transistor according to claim 2, wherein the second conductive impurity layer is formed to be in contact with the collector region of the first high-concentration type. 제2항에 있어서, 상기 트랜지스터는 NPN 다알링톤 트랜지스터인 것을 특징으로 하는 트랜지스터 제조방법.3. The method of claim 2, wherein said transistor is an NPN dahlington transistor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950055605A 1995-12-23 1995-12-23 Transistor with zener diode and method of fabricating the same KR0170200B1 (en)

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KR0170200B1 KR0170200B1 (en) 1999-02-01

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