KR970054101A - MOS transistor - Google Patents
MOS transistor Download PDFInfo
- Publication number
- KR970054101A KR970054101A KR1019950065706A KR19950065706A KR970054101A KR 970054101 A KR970054101 A KR 970054101A KR 1019950065706 A KR1019950065706 A KR 1019950065706A KR 19950065706 A KR19950065706 A KR 19950065706A KR 970054101 A KR970054101 A KR 970054101A
- Authority
- KR
- South Korea
- Prior art keywords
- removal
- mos transistor
- polysilicon layer
- removal portion
- oxide film
- Prior art date
Links
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- Insulated Gate Type Field-Effect Transistor (AREA)
Abstract
본 발명은 모스 트랜지스터에 관한 것으로, 유효 정전용량을 증가시키기 위하여 폭 및 길이가 분할된 구조의 게이트 전극을 형성하므로써 동일한 면적에서의 유효정전용량이 증가되며, 게이트 산화막의 특성 저하가 방지되어 소자의 신뢰성이 향상될 수 있도록 한 모스 트랜지스터에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a MOS transistor. The effective capacitance in the same area is increased by forming a gate electrode having a structure in which the width and the length are divided to increase the effective capacitance, and the deterioration of the characteristics of the gate oxide film is prevented. The present invention relates to a MOS transistor capable of improving reliability.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.
제3A 내지 제3C도는 본 발명에 따른 모스 트랜지스터를 설명하기 위한 소자의 단면도.3A to 3C are cross-sectional views of elements for explaining the MOS transistor according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950065706A KR970054101A (en) | 1995-12-29 | 1995-12-29 | MOS transistor |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950065706A KR970054101A (en) | 1995-12-29 | 1995-12-29 | MOS transistor |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970054101A true KR970054101A (en) | 1997-07-31 |
Family
ID=66624220
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950065706A KR970054101A (en) | 1995-12-29 | 1995-12-29 | MOS transistor |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970054101A (en) |
-
1995
- 1995-12-29 KR KR1019950065706A patent/KR970054101A/en not_active Application Discontinuation
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Legal Events
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WITN | Withdrawal due to no request for examination |