KR970054101A - MOS transistor - Google Patents

MOS transistor Download PDF

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Publication number
KR970054101A
KR970054101A KR1019950065706A KR19950065706A KR970054101A KR 970054101 A KR970054101 A KR 970054101A KR 1019950065706 A KR1019950065706 A KR 1019950065706A KR 19950065706 A KR19950065706 A KR 19950065706A KR 970054101 A KR970054101 A KR 970054101A
Authority
KR
South Korea
Prior art keywords
removal
mos transistor
polysilicon layer
removal portion
oxide film
Prior art date
Application number
KR1019950065706A
Other languages
Korean (ko)
Inventor
정채현
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950065706A priority Critical patent/KR970054101A/en
Publication of KR970054101A publication Critical patent/KR970054101A/en

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  • Insulated Gate Type Field-Effect Transistor (AREA)

Abstract

본 발명은 모스 트랜지스터에 관한 것으로, 유효 정전용량을 증가시키기 위하여 폭 및 길이가 분할된 구조의 게이트 전극을 형성하므로써 동일한 면적에서의 유효정전용량이 증가되며, 게이트 산화막의 특성 저하가 방지되어 소자의 신뢰성이 향상될 수 있도록 한 모스 트랜지스터에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a MOS transistor. The effective capacitance in the same area is increased by forming a gate electrode having a structure in which the width and the length are divided to increase the effective capacitance, and the deterioration of the characteristics of the gate oxide film is prevented. The present invention relates to a MOS transistor capable of improving reliability.

Description

모스(MOS) 트랜지스터MOS transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제3A 내지 제3C도는 본 발명에 따른 모스 트랜지스터를 설명하기 위한 소자의 단면도.3A to 3C are cross-sectional views of elements for explaining the MOS transistor according to the present invention.

Claims (2)

모스 트랜지스터에 있어서, 각 모서리부분에는 정사각형으로 제거된 제1제거부가 형성되고, 상기 각 제1제거부 사이에는 상기 제1제거부와 동일한 세로변 및 일정길이의 가로변을 갖는 제2제거부가 형성되며, 중앙부에는 각변의 길이가 상기 제2제거부의 가로변과 동일한 제3제거부가 형성된 폴리실리콘층과, 상기 폴리실리콘층과 동일한 형태를 가지며, 상기 폴리실리콘층의 하부에 형성된 게이트 산화막과, 상기 게이트 산화막 및폴리실리콘층이 적층된 게이트 전극이 상부에 위치하며, 필드 영역에는 필드 산화막이 형성된 실리콘 기판과상기 제1 내지 제3제거부를 통하여 노출되며, 상기 각 제거부의 제거면과 접하는 상기 실리콘 기판에 소정의 크기로 형성된 접합 영역으로 이루어지는 것을 특징으로 하는 모스 트랜지스터.In the MOS transistor, each corner portion includes a first removal portion removed in a square shape, and a second removal portion having the same vertical side and a horizontal length as the first removal portion is formed between each first removal portion. And a polysilicon layer having a third removal portion having a length equal to a horizontal side of the second removal portion at a central portion thereof, the same shape as that of the polysilicon layer, and a gate oxide film formed under the polysilicon layer, and the gate A gate electrode having an oxide film and a polysilicon layer stacked thereon is disposed thereon, and a silicon substrate having a field oxide film formed in a field region and exposed through the first to third removal parts, and contacted with a removal surface of each removal part. A MOS transistor, comprising: a junction region formed in a predetermined size on the substrate. 제1항에 있어서, 상기 제1및 제2제거부 사이에 위치하는 상기 폴리실리콘층의 각 변은 상기 제1제거부의 각변의 길이와 동일한 것을 특징으로 하는 모스 트랜지스터.The MOS transistor of claim 1, wherein each side of the polysilicon layer positioned between the first and second removal portions is equal to a length of each side of the first removal portion. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950065706A 1995-12-29 1995-12-29 MOS transistor KR970054101A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950065706A KR970054101A (en) 1995-12-29 1995-12-29 MOS transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950065706A KR970054101A (en) 1995-12-29 1995-12-29 MOS transistor

Publications (1)

Publication Number Publication Date
KR970054101A true KR970054101A (en) 1997-07-31

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ID=66624220

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950065706A KR970054101A (en) 1995-12-29 1995-12-29 MOS transistor

Country Status (1)

Country Link
KR (1) KR970054101A (en)

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