KR970053204A - Electrode Pads for TEG - Google Patents

Electrode Pads for TEG Download PDF

Info

Publication number
KR970053204A
KR970053204A KR1019950069749A KR19950069749A KR970053204A KR 970053204 A KR970053204 A KR 970053204A KR 1019950069749 A KR1019950069749 A KR 1019950069749A KR 19950069749 A KR19950069749 A KR 19950069749A KR 970053204 A KR970053204 A KR 970053204A
Authority
KR
South Korea
Prior art keywords
teg
electrode pad
electrode pads
scribe line
electrode
Prior art date
Application number
KR1019950069749A
Other languages
Korean (ko)
Other versions
KR100195279B1 (en
Inventor
윤승범
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950069749A priority Critical patent/KR100195279B1/en
Publication of KR970053204A publication Critical patent/KR970053204A/en
Application granted granted Critical
Publication of KR100195279B1 publication Critical patent/KR100195279B1/en

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L24/00—Arrangements for connecting or disconnecting semiconductor or solid-state bodies; Methods or apparatus related thereto
    • H01L24/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L24/10—Bump connectors ; Manufacturing methods related thereto
    • H01L24/11—Manufacturing methods
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/50—Assembly of semiconductor devices using processes or apparatus not provided for in a single one of the subgroups H01L21/06 - H01L21/326, e.g. sealing of a cap to a base of a container
    • H01L21/60—Attaching or detaching leads or other conductive members, to be used for carrying current to or from the device in operation
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L2224/00—Indexing scheme for arrangements for connecting or disconnecting semiconductor or solid-state bodies and methods related thereto as covered by H01L24/00
    • H01L2224/01—Means for bonding being attached to, or being formed on, the surface to be connected, e.g. chip-to-package, die-attach, "first-level" interconnects; Manufacturing methods related thereto
    • H01L2224/10—Bump connectors; Manufacturing methods related thereto
    • H01L2224/11—Manufacturing methods

Landscapes

  • Engineering & Computer Science (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)
  • Testing Or Measuring Of Semiconductors Or The Like (AREA)

Abstract

다수개의 사각형으로 분할된 TEG용 전극 패드에 대해 기재되어 있다. 이는, 스크라이브 라인내에 형성된 TEG용 범프전극의 전극 패드에 있어서, 전극 패드는 다수개의 사각형으로 분할된 구조로 형성된 것을 특징으로 한다. 따라서, 범프전극의 형성공정 후 진행하는 금속막의 식각시 스크라이브 라인내에 최소한의 금속막만이 잔존하게 되며, 이에 따라 패키지의 핀간 단락을 방지할 수 있다.An electrode pad for a TEG divided into a plurality of squares is described. This is characterized in that, in the electrode pad of the bump electrode for TEG formed in the scribe line, the electrode pad is formed in a structure divided into a plurality of squares. Therefore, only a minimum metal film remains in the scribe line during the etching of the metal film that is performed after the bump electrode forming process, thereby preventing a short circuit between the pins of the package.

Description

TEG용 전극 패드Electrode Pads for TEG

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 따른 TEG용 전극 패턴을 도시한 평면도이다.3 is a plan view showing an electrode pattern for a TEG according to the present invention.

Claims (1)

스크라이브 라인내에 형성된 TEG용 범프전극의 전극 패드에 있어서, 상기 전극 패드는 다수개의 사각형으로 분할한 구조로 형성된 것을 특징으로 하는 TEG용 범프전극의 전극 패드.An electrode pad of a TEG bump electrode formed in a scribe line, wherein the electrode pad is formed in a structure divided into a plurality of quadrangles. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950069749A 1995-12-30 1995-12-30 Electrode pad for teg KR100195279B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950069749A KR100195279B1 (en) 1995-12-30 1995-12-30 Electrode pad for teg

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950069749A KR100195279B1 (en) 1995-12-30 1995-12-30 Electrode pad for teg

Publications (2)

Publication Number Publication Date
KR970053204A true KR970053204A (en) 1997-07-29
KR100195279B1 KR100195279B1 (en) 1999-06-15

Family

ID=19448575

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950069749A KR100195279B1 (en) 1995-12-30 1995-12-30 Electrode pad for teg

Country Status (1)

Country Link
KR (1) KR100195279B1 (en)

Also Published As

Publication number Publication date
KR100195279B1 (en) 1999-06-15

Similar Documents

Publication Publication Date Title
KR950004464A (en) Manufacturing method of chip bump
TW370695B (en) Semiconductor device and manufacturing method and testing method of the same
KR950034544A (en) Semiconductor Wafers and Semiconductor Devices
KR970060467A (en) Semiconductor device
KR910019236A (en) Semiconductor device
KR970053198A (en) Bonding device for semiconductor device and manufacturing method thereof
KR970053204A (en) Electrode Pads for TEG
KR980005930A (en) Semiconductor device and manufacturing method
KR970024076A (en) Manufacturing method of solder bump
KR960002508A (en) Master semiconductor manufacturing method
KR960019485A (en) Exposure mask
KR980005296A (en) Reticle for contact photo of semiconductor device and contact formation method using same
KR940010302A (en) Semiconductor connection device
KR970059832A (en) Structure of photomask
KR920010798A (en) A method for forming a semiconductor chip and dummy wire bond pad having a dummy wire bond pad
KR970048925A (en) Masks used in the manufacture of semiconductor devices
KR930014924A (en) IC Package Manufacturing Method
KR950025885A (en) Exposure mask formation method
KR970052550A (en) Contact Forming Method of Semiconductor Device
KR930003304A (en) Semiconductor chip for wire bonding by pattern recognition method
KR950009994A (en) Metal pad formation method of semiconductor device
KR950027970A (en) Semiconductor manufacturing method
KR980005306A (en) Alignment key of the semiconductor device pattern
KR970023929A (en) Pad Placement Reduces Chip Area
TW240326B (en) Device for IC

Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080201

Year of fee payment: 10

LAPS Lapse due to unpaid annual fee