KR970052617A - Texture etching method and texture solution of silicon wafer - Google Patents

Texture etching method and texture solution of silicon wafer Download PDF

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KR970052617A
KR970052617A KR1019950046032A KR19950046032A KR970052617A KR 970052617 A KR970052617 A KR 970052617A KR 1019950046032 A KR1019950046032 A KR 1019950046032A KR 19950046032 A KR19950046032 A KR 19950046032A KR 970052617 A KR970052617 A KR 970052617A
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volume
solution
texture
deionized water
etching
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KR0180621B1 (en
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윤종욱
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이창세
주식회사 실트론
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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/30—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26
    • H01L21/302—Treatment of semiconductor bodies using processes or apparatus not provided for in groups H01L21/20 - H01L21/26 to change their surface-physical characteristics or shape, e.g. etching, polishing, cutting
    • H01L21/306—Chemical or electrical treatment, e.g. electrolytic etching
    • H01L21/30604—Chemical etching
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D7/00—Compositions of detergents based essentially on non-surface-active compounds
    • C11D7/02—Inorganic compounds
    • C11D7/04—Water-soluble compounds
    • C11D7/06—Hydroxides
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67028—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like
    • H01L21/6704—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing
    • H01L21/67057—Apparatus for fluid treatment for cleaning followed by drying, rinsing, stripping, blasting or the like for wet cleaning or washing with the semiconductor substrates being dipped in baths or vessels
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment
    • H01L21/67063—Apparatus for fluid treatment for etching
    • H01L21/67075—Apparatus for fluid treatment for etching for wet etching
    • H01L21/67086—Apparatus for fluid treatment for etching for wet etching with the semiconductor substrates being dipped in baths or vessels
    • C—CHEMISTRY; METALLURGY
    • C11—ANIMAL OR VEGETABLE OILS, FATS, FATTY SUBSTANCES OR WAXES; FATTY ACIDS THEREFROM; DETERGENTS; CANDLES
    • C11D—DETERGENT COMPOSITIONS; USE OF SINGLE SUBSTANCES AS DETERGENTS; SOAP OR SOAP-MAKING; RESIN SOAPS; RECOVERY OF GLYCEROL
    • C11D2111/00—Cleaning compositions characterised by the objects to be cleaned; Cleaning compositions characterised by non-standard cleaning or washing processes
    • C11D2111/10—Objects to be cleaned
    • C11D2111/14—Hard surfaces
    • C11D2111/22—Electronic devices, e.g. PCBs or semiconductors

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  • Chemical & Material Sciences (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
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  • Condensed Matter Physics & Semiconductors (AREA)
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  • General Chemical & Material Sciences (AREA)
  • Inorganic Chemistry (AREA)
  • Life Sciences & Earth Sciences (AREA)
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Abstract

수산화칼륨 용액 0.5∼5.0 부피% : 이소프로필알코올 3.0∼20.0 부피% : 탈이온수 75.0∼96.5 부피%의 비율로 혼합하여 텍스쳐 에칭 용액을 제조하고, 상기 에칭 용액에 실리콘 웨이퍼를 담그어 에칭한 후, 상기 에칭한 웨이퍼를 수세하고, 중화한 뒤, 세정 및 건조하는 공정을 포함하는 실리콘 웨이퍼의 텍스쳐에칭 방법은 태양전지용 실리콘 웨이퍼 표면을 빛흡수가 잘되는 미세피라미드 구조로 효과적으로 만들 수 있다. 또한, 상기한 방법으로 제조된 텍스쳐 에칭용액으로 에칭을 1회 실시한 후 각 성분을 일정 비율로 다시 첨가하면 용액을 반복하여 사용할 수 있어, 용액의 준비시간을 줄이고 사용 횟수를 증가시킬 수 있는 효과가 있다.0.5 to 5.0% by volume of potassium hydroxide solution: 3.0 to 20.0% by volume of isopropyl alcohol: 75.0 to 99.5% by volume of deionized water to prepare a texture etching solution, and then immersed and etched a silicon wafer in the etching solution, The texture etching method of a silicon wafer including washing, etching, and neutralizing the etched wafer can effectively make the silicon wafer surface for solar cells into a fine pyramid structure with good light absorption. In addition, after the etching is performed once with the texture etching solution prepared by the method described above, if each component is added again at a predetermined ratio, the solution may be repeatedly used, thereby reducing the preparation time of the solution and increasing the number of times of use. have.

Description

실리콘 웨이퍼의 텍스쳐 에칭 방법 및 텍스쳐 용액Texture etching method and texture solution of silicon wafer

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제1도는 본 발명에 따른 실리콘 웨이퍼의 텍스쳐 에칭방법을 개략적으로 나타낸 공정도.1 is a process diagram schematically showing a texture etching method of a silicon wafer according to the present invention.

Claims (11)

수산화칼륨 용액 0.5∼5.0 % : 이소프로필알코올 3.0∼20.0 부피% : 탈이온수 75.0∼96.5 부피%의 비율로 혼합하여 텍스쳐 에칭 용액을 제조하고; 상기 에칭 용액에 실리콘 웨이퍼를 담그어 에칭한 후; 상기 에칭한 웨이퍼를 수세하고, 중화한 뒤, 세정 및 건조하는; 공정을 포함하는 실리콘 웨이퍼의 텍스쳐 에칭 방법.0.5 to 5.0% potassium hydroxide solution: 3.0 to 20.0% by volume of isopropyl alcohol: 75.0 to 99.5% by volume of deionized water to prepare a texture etching solution; Dipping and etching a silicon wafer in the etching solution; Washing the washed wafer with water, neutralizing it, and then washing and drying the etched wafer; A method of etching a texture of a silicon wafer comprising a process. 제1항에 있어서, 상기 텍스쳐 에칭 용액은 수산화칼륨 용액과 상기 이소프로필 알코올 및 상기 탈이온수를 각각 1∼3 부피% : 5∼10 부피% : 87∼94%의 비율로 포함하는 텍스쳐 에칭 방법.The texture etching method of claim 1, wherein the texture etching solution comprises potassium hydroxide solution, isopropyl alcohol, and deionized water in a ratio of 1 to 3% by volume: 5 to 10% by volume: 87 to 94%, respectively. 제1항에 있어서, 상기 텍스쳐 에칭 용액은 상온의 수산화칼륨 용액과 50∼70℃의 이소프로필알코올 및 80∼99℃의 탈이온수를 혼합하여 제조하는 것인 텍스쳐 에칭 방법.The texture etching method of claim 1, wherein the texture etching solution is prepared by mixing a potassium hydroxide solution at room temperature, isopropyl alcohol at 50 ° C. to 70 ° C., and deionized water at 80 ° C. to 99 ° C. 3. 제1항에 있어서, 상기 텍스쳐 에칭 용액의 온도가 80∼85℃로 유지된 상태에서 상기 웨이퍼를 상하로 움직이면서 25∼60분간 실시하는 것인 텍스쳐 에칭 방법.The texture etching method according to claim 1, wherein the wafer is operated for 25 to 60 minutes while the wafer is moved up and down while the temperature of the texture etching solution is maintained at 80 to 85 ° C. 제1항에 있어서, 상기 웨이퍼를 탈이온수에 5분이상 담그어 수세하고, 묽은 염산 용액에 5분이상 담그어 중화한 후, 다시 탈이온수에 5분이상 담그어 세정하는 것인 텍스쳐 에칭 방법.The texture etching method according to claim 1, wherein the wafer is immersed in deionized water for 5 minutes or more, washed with water, diluted in dilute hydrochloric acid solution for 5 minutes or more, and then immersed in deionized water for 5 minutes or more. 제5항에 있어서, 상기 염산 용액의 농도는 용매와의 부피 비율로 1∼10%인 텍스쳐 에칭 방법.The method of claim 5, wherein the concentration of the hydrochloric acid solution is 1-10% by volume with the solvent. 수산화칼륨 용액 0.5∼5 부피% : 이소프로필알코올 3∼20 부피% : 탈이온수 75.0∼96.5 부피%의 비율로 포함하는 텍스쳐 에칭 용액.0.5-5% by volume of potassium hydroxide solution: 3-20% by volume of isopropyl alcohol: Texture etching solution containing 75.0-9.5% by volume of deionized water. 제7항에 있어서, 상기 수산화칼륨 용액 1∼3 부피% : 이소프로필알코올 5∼10 부피% : 탈이온수 87∼94 부피%의 비율로 포함하는 텍스쳐 에칭 용액.The texture etching solution according to claim 7, wherein the potassium hydroxide solution is contained in a ratio of 1 to 3% by volume: 5 to 10% by volume of isopropyl alcohol: 87 to 94% by volume of deionized water. 제7항에 있어서, 상기 이소프로필알코올의 온도는 50∼70℃이고, 상기 탈이온수의 온도는 80∼99℃인 텍스쳐 에칭 용액.The texture etching solution according to claim 7, wherein the temperature of the isopropyl alcohol is 50 to 70 ° C. and the temperature of the deionized water is 80 to 99 ° C. 9. 수산화칼륨 용액 0.5∼5.0% : 이소프로필알코올 3.0∼20.0 부피% : 탈이온수 75.0∼96.5 부피%의 비율로 혼합하여 텍스쳐 에칭 용액을 제조하고 ; 상기 에칭 용액에 실리콘 웨이퍼를 담그어 에칭한 후; 상기 에칭을 실시한 용액에 수산화칼륨 용액 0.0∼1.0 부피% : 이소프로필알코올 1.0∼10.0 부피% : 탈이온수 1.0∼10.0 부피%의 비율로 혼합한 용액을 더 첨가하는; 공정을 포함하는 텍스쳐 에칭 용액의 재생 방법.Potassium hydroxide solution 0.5-5.0%: isopropyl alcohol 3.0-20.0 volume%: Deionized water mixed at a ratio of 75.0 to 96.5 volume% to prepare a texture etching solution; Dipping and etching a silicon wafer in the etching solution; Adding a solution mixed at a ratio of 0.0 to 1.0% by volume of potassium hydroxide solution: 1.0 to 10.0% by volume of isopropyl alcohol: 1.0 to 10.0% by volume of deionized water to the solution subjected to the etching; A method of regenerating a texture etching solution comprising a step. 제10항에 있어서, 상기 수산화칼륨 용액, 이소프로필알코올 및 탈이온수를 혼합한 용액의 첨가량은 상기 텍스쳐 에칭 용액의 2∼20 부피%인 텍스쳐 에칭 용액의 재생 방법.The method for regenerating a texture etching solution according to claim 10, wherein the amount of the potassium hydroxide solution, isopropyl alcohol, and deionized water mixed is 2-20% by volume of the texture etching solution. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950046032A 1995-12-01 1995-12-01 Texture etching method of silicon wafer and texture solution KR0180621B1 (en)

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012021025A2 (en) 2010-08-12 2012-02-16 동우 화인켐 주식회사 Texture-etchant composition for crystalline silicon wafer and method for texture-etching (2)
WO2012021026A2 (en) 2010-08-12 2012-02-16 동우 화인켐 주식회사 Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1)

Families Citing this family (8)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101994084B1 (en) 2012-12-24 2019-06-28 동우 화인켐 주식회사 Texture etching solution composition and texture etching method of crystalline silicon wafers
KR102122049B1 (en) 2013-07-19 2020-06-11 동우 화인켐 주식회사 Texture etching solution composition and texture etching method of crystalline silicon wafers
KR101863536B1 (en) 2014-03-07 2018-06-01 동우 화인켐 주식회사 Texture etching solution composition and texture etching method of crystalline silicon wafers
KR101956352B1 (en) 2014-03-20 2019-03-08 동우 화인켐 주식회사 Texture etching solution composition and texture etching method of crystalline silicon wafers
KR101731497B1 (en) 2015-06-11 2017-04-28 한국과학기술연구원 Method for texturing of semiconductor substrate, semiconductor substrate manufactured by the method and solar cell comprising the same
KR101919487B1 (en) 2017-09-14 2018-11-19 한국과학기술연구원 Method for texturing semiconductor substrate, semiconductor substrate manufactured by the method and solar cell comprising the same
KR102307936B1 (en) 2019-11-29 2021-10-05 한국과학기술연구원 Silicon wafer structures textured with quasi-hexagonal nano-pyramids and method for manufacturing the silicon wafer, and a solar cell comprising the same
KR102307791B1 (en) 2019-11-29 2021-10-05 한국과학기술연구원 Method of texturing a silicon wafer with quasi-random nanostructures and the silicon wafer manufactured by the method, and a solar cell comprising the same

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2012021025A2 (en) 2010-08-12 2012-02-16 동우 화인켐 주식회사 Texture-etchant composition for crystalline silicon wafer and method for texture-etching (2)
WO2012021026A2 (en) 2010-08-12 2012-02-16 동우 화인켐 주식회사 Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1)
US9305792B2 (en) 2010-08-12 2016-04-05 Dongwoo Fine-Chem Co., Ltd. Texture-etchant composition for crystalline silicon wafer and method for texture-etching (1)

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