KR970052580A - Interlayer insulating film planarization method of semiconductor device - Google Patents

Interlayer insulating film planarization method of semiconductor device Download PDF

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Publication number
KR970052580A
KR970052580A KR1019950066944A KR19950066944A KR970052580A KR 970052580 A KR970052580 A KR 970052580A KR 1019950066944 A KR1019950066944 A KR 1019950066944A KR 19950066944 A KR19950066944 A KR 19950066944A KR 970052580 A KR970052580 A KR 970052580A
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KR
South Korea
Prior art keywords
interlayer insulating
insulating film
semiconductor device
forming
planarization method
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Application number
KR1019950066944A
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Korean (ko)
Inventor
이해정
최지현
황병근
구주선
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950066944A priority Critical patent/KR970052580A/en
Publication of KR970052580A publication Critical patent/KR970052580A/en

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  • Formation Of Insulating Films (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 반도체 장치의 층간 절연막 평탄화 방법에 관한 것으로서, 본 발명에 따른 층간 절연막 형성방법은 트랜지스터가 형성된 반도체 기판상에 고온 산화막을 형성하는 단계와, 상기 고온 산화막 위에 하이드로겐 실세스퀴옥산을 기본으로 하는 유동성 산화물을 도포하여 층간 절연막을 형성하는 단계와, 상기 층간 절연막을 열처리하는 단계를 포함한다. 본 발명에 의하면, 층간 절연막을 평탄화하기 위한 공정이 단순하고, 비용이 저렴하며, 평탄도가 우수하여 후속 배선 형성공정이 용이해진다.The present invention relates to a method of planarizing an interlayer insulating film of a semiconductor device. The method of forming an interlayer insulating film according to the present invention includes forming a high temperature oxide film on a semiconductor substrate on which a transistor is formed, and using hydrogen silsesquioxane based on the high temperature oxide film. Forming an interlayer insulating film by applying a flowable oxide; and heat-treating the interlayer insulating film. According to the present invention, the process for planarizing the interlayer insulating film is simple, inexpensive, and has excellent flatness, thereby facilitating subsequent wiring forming processes.

Description

반도체 장치의 층간 절연막 평탄화 방법Interlayer insulating film planarization method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명에 따른 층간 절연막 평탄화 방법을 설명하기 위한 도면.1 is a view for explaining the interlayer insulating film planarization method according to the present invention.

Claims (2)

트랜지스터가 형성된 반도체 기판상에 고온 산화막을 형성하는 단계와, 상기 고온 산화막 위에 하이드로겐 실세스퀴옥산을 기본으로 하는 유동성 산화물을 도포하여 층간 절연막을 형성하는 단계와, 상기 층간 절연막을 열처리하는 단계를 포함하는 단계를 포함하는 것을 특징으로 하는 층간 절연막 평탄화 방법.Forming a high temperature oxide film on a semiconductor substrate on which a transistor is formed, applying a flowable oxide based on hydrogen silsesquioxane on the high temperature oxide film to form an interlayer insulating film, and heat treating the interlayer insulating film. An interlayer insulating film planarization method comprising the step of including. 제1항에 있어서, 상기 열처리 온도는 450~1000℃인 것을 특징으로 하는 층간 절연막 평탄화 방법.The method of claim 1, wherein the heat treatment temperature is 450 ~ 1000 ℃. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950066944A 1995-12-29 1995-12-29 Interlayer insulating film planarization method of semiconductor device KR970052580A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950066944A KR970052580A (en) 1995-12-29 1995-12-29 Interlayer insulating film planarization method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950066944A KR970052580A (en) 1995-12-29 1995-12-29 Interlayer insulating film planarization method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970052580A true KR970052580A (en) 1997-07-29

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Application Number Title Priority Date Filing Date
KR1019950066944A KR970052580A (en) 1995-12-29 1995-12-29 Interlayer insulating film planarization method of semiconductor device

Country Status (1)

Country Link
KR (1) KR970052580A (en)

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