KR970052116A - Hmds 공급 장치 및 그 사용법 - Google Patents

Hmds 공급 장치 및 그 사용법 Download PDF

Info

Publication number
KR970052116A
KR970052116A KR1019950059509A KR19950059509A KR970052116A KR 970052116 A KR970052116 A KR 970052116A KR 1019950059509 A KR1019950059509 A KR 1019950059509A KR 19950059509 A KR19950059509 A KR 19950059509A KR 970052116 A KR970052116 A KR 970052116A
Authority
KR
South Korea
Prior art keywords
flow meter
optical sensor
hmds
light source
light
Prior art date
Application number
KR1019950059509A
Other languages
English (en)
Other versions
KR0165322B1 (ko
Inventor
문윤정
김성일
김정석
신원열
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950059509A priority Critical patent/KR0165322B1/ko
Priority to TW085106967A priority patent/TW305054B/zh
Priority to JP8202352A priority patent/JPH09186059A/ja
Priority to US08/773,060 priority patent/US5916626A/en
Publication of KR970052116A publication Critical patent/KR970052116A/ko
Application granted granted Critical
Publication of KR0165322B1 publication Critical patent/KR0165322B1/ko

Links

Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/04—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer
    • H01L21/18—Manufacture or treatment of semiconductor devices or of parts thereof the devices having potential barriers, e.g. a PN junction, depletion layer or carrier concentration layer the devices having semiconductor bodies comprising elements of Group IV of the Periodic Table or AIIIBV compounds with or without impurities, e.g. doping materials
    • H01L21/22—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities
    • H01L21/223—Diffusion of impurity materials, e.g. doping materials, electrode materials, into or out of a semiconductor body, or between semiconductor regions; Interactions between two or more impurities; Redistribution of impurities using diffusion into or out of a solid from or into a gaseous phase
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67242—Apparatus for monitoring, sorting or marking
    • H01L21/67253—Process monitoring, e.g. flow or thickness monitoring
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/22—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the deposition of inorganic material, other than metallic material
    • C23C16/30—Deposition of compounds, mixtures or solid solutions, e.g. borides, carbides, nitrides
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/52—Controlling or regulating the coating process
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/67017—Apparatus for fluid treatment

Landscapes

  • Chemical & Material Sciences (AREA)
  • Engineering & Computer Science (AREA)
  • General Chemical & Material Sciences (AREA)
  • Chemical Kinetics & Catalysis (AREA)
  • Materials Engineering (AREA)
  • Mechanical Engineering (AREA)
  • Metallurgy (AREA)
  • Organic Chemistry (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Inorganic Chemistry (AREA)
  • Exposure Of Semiconductors, Excluding Electron Or Ion Beam Exposure (AREA)
  • Geophysics And Detection Of Objects (AREA)
  • Photosensitive Polymer And Photoresist Processing (AREA)

Abstract

유량계에서 HMDS의 흐름을 감시하고, 확인하여 생산성의 저하를 방지할 수 있는 HMDS 공급 장치 및 그 사용법을 제공한다.
본 발명은 투명한 내부에 볼이 보이는 유량계를 포함하는 HMDS 공급장치에 있어서, 상기 유량계의 투명한 내부를 통하여 빛이 통과하도록 상기 유량계의 외부에 설치된 광원 및 광센서로 형성된 광학적 감지기 및 상기 광학적 감지기에 연결되어 광학적 감지의 신호를 제어하는 조절기를 포함한다. 본 발명에 의하여 감광막 도포시 HMDS 처리 공정의 불량이 대량으로 발생하는 것을 방지하여 생산성을 향상시키고, 원가를 절감하는 효과를 얻을 수 있다.

Description

HMDS공급 장치 및 그 사용법
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음
제2도는 본 발명에 의하여 유량계에서 HMDS의 흐름을 확인하기 위한 HMDS 공급 장치의 일부분을 보여주는 구성도이다.

Claims (3)

  1. 투명한 내부에 볼이 보이는 유량계를 포함하는 HMDS 공급 장치에 있어서, 상기 유량계의 투명한 내부를 통하여 빛이 통과하도록 상기 유량계의 외부에 설치된 광원과 광센서로 형성된 광학적 감지기; 및 상기 광학적 감지기에 연결되어 상기 광학적 감지의 신호를 제어하는 조절기를 포함하는 HMDS 공급 장치.
  2. 제1항에 있어서, 상기 광원은 LED 또는 레이저 다이오드인 것을 특징으로 하는 HMDS 공급 장치.
  3. 투명한 내부에 볼이 보이는 유량계 및 광학적 감지기를 포함하는 HMDS 공급 장치의 사용법에 있어서, 상기 광학적 감지기에서 광원에서 나온 빛이 상기 유량계를 통하여 광센서에서 감지되는 단계; 상기 유량계를 통하여 흐르는 HMDS에 의해서 상기 유량계 내부에서 볼이 상승하는 단계; 및 상기 볼에 의해서 상기 광원에서 나온 빛이 차단되어 광센서에서 감지되지 않는 단계를 포함하는 HMDS 공급 장치의 사용법.
    ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.
KR1019950059509A 1995-12-27 1995-12-27 Hmds 공급 장치 및 그 사용법 KR0165322B1 (ko)

Priority Applications (4)

Application Number Priority Date Filing Date Title
KR1019950059509A KR0165322B1 (ko) 1995-12-27 1995-12-27 Hmds 공급 장치 및 그 사용법
TW085106967A TW305054B (en) 1995-12-27 1996-06-10 Hexamethyldisilazane (HMDS) supplying apparatus
JP8202352A JPH09186059A (ja) 1995-12-27 1996-07-31 Ｈｍｄｓ供給装置
US08/773,060 US5916626A (en) 1995-12-27 1996-12-24 HMDS supplying apparatus

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950059509A KR0165322B1 (ko) 1995-12-27 1995-12-27 Hmds 공급 장치 및 그 사용법

Publications (2)

Publication Number Publication Date
KR970052116A true KR970052116A (ko) 1997-07-29
KR0165322B1 KR0165322B1 (ko) 1999-02-01

Family

ID=19445220

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950059509A KR0165322B1 (ko) 1995-12-27 1995-12-27 Hmds 공급 장치 및 그 사용법

Country Status (4)

Country Link
US (1) US5916626A (ko)
JP (1) JPH09186059A (ko)
KR (1) KR0165322B1 (ko)
TW (1) TW305054B (ko)

Families Citing this family (6)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US7727588B2 (en) * 2003-09-05 2010-06-01 Yield Engineering Systems, Inc. Apparatus for the efficient coating of substrates
TWI249218B (en) * 2004-08-10 2006-02-11 Powerchip Semiconductor Corp Measuring equipment and monitor method for the wet cleaning process
US11175279B2 (en) 2010-05-03 2021-11-16 Creatv Microtech, Inc. Polymer microfilters, devices comprising the same, methods of manufacturing the same, and uses thereof
US10195570B2 (en) * 2011-01-07 2019-02-05 Creative Micro Tech, Inc. Fabrication of microfilters and nanofilters and their applications
JP2017094417A (ja) * 2015-11-19 2017-06-01 株式会社ディスコ 加工装置
CN115729058A (zh) * 2022-11-14 2023-03-03 上海图双精密装备有限公司 一种用于涂胶显影设备的全自动供液系统

Family Cites Families (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
JP3115134B2 (ja) * 1992-11-27 2000-12-04 松下電器産業株式会社 薄膜処理装置および薄膜処理方法

Also Published As

Publication number Publication date
KR0165322B1 (ko) 1999-02-01
TW305054B (en) 1997-05-11
JPH09186059A (ja) 1997-07-15
US5916626A (en) 1999-06-29

Similar Documents

Publication Publication Date Title
ATE85438T1 (de) Anzeigevorrichtung vom transmissiven typ.
ATE345826T1 (de) Gerät zur überwachung einer flüssigkeitsleitung
ATE458178T1 (de) (fiber) optischer sensor mit geeigneter modulation
FI973405A0 (fi) Fluoresoiva optinen anturi
KR890015012A (ko) 광파이버 습기 감지기
ATE186396T1 (de) Vorrichtung und verfahren zur unterscheidung zwischen flüssigkeit und gas
ES2103965T3 (es) Sensor optico.
WO1998028661A3 (en) Optical height meter, surface-inspection device provided with such a height meter, and lithographic apparatus provided with the inspection device
ATE329242T1 (de) Verfahren und vorrichtung zur messung der lichtdurchlässigkeit von linsen
SE9902590L (sv) Förfarande och anordning vid optiska mätsystem
KR970052116A (ko) Hmds 공급 장치 및 그 사용법
KR960024248A (ko) 광섬유의 위치를 모니터하기 위한 방법 및 그 장치
TW200618320A (en) Flat-panel display photosensing apparatus and system
DE69920443D1 (de) Einrichtung zum teilchennachweis
TW200506264A (en) Device for monitoring the flow of a fluid flowing through or from a conduit, such as a lubricant or an article treatment fluid, and the monitoring method implemented by the device
KR970047702A (ko) 냉장고의 표시부 제어장치
JP3347013B2 (ja) オイルミストセンサ
SE9600914D0 (sv) Gassensor
ATE292806T1 (de) Optoelektronisches überwachungssystem
FR2391140A1 (fr) Dispositif opto-electronique de detection de la rupture d'un fil muni de moyen de reduire des perturbations
KR20070087297A (ko) 광원의 산포 방지 시스템 및 그 방법
WO2003100471A3 (en) Distributed contaminant optical monitoring system
JP2816702B2 (ja) 測定装置
JPS6033542A (ja) 撮影レンズ画角連動型フラッシュライト
KR970058518A (ko) 반원통형 페라이트코어 검사장치

Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
FPAY Annual fee payment

Payment date: 20080904

Year of fee payment: 11

LAPS Lapse due to unpaid annual fee