KR970052056A - Solid precursor transfer method and apparatus - Google Patents

Solid precursor transfer method and apparatus Download PDF

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Publication number
KR970052056A
KR970052056A KR1019950046196A KR19950046196A KR970052056A KR 970052056 A KR970052056 A KR 970052056A KR 1019950046196 A KR1019950046196 A KR 1019950046196A KR 19950046196 A KR19950046196 A KR 19950046196A KR 970052056 A KR970052056 A KR 970052056A
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KR
South Korea
Prior art keywords
precursor
solid
dpm
gas
cartridge
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KR1019950046196A
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Korean (ko)
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KR100239689B1 (en
Inventor
이시우
김병엽
이경일
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문정환
Lg 반도체주식회사
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Priority to KR1019950046196A priority Critical patent/KR100239689B1/en
Publication of KR970052056A publication Critical patent/KR970052056A/en
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Publication of KR100239689B1 publication Critical patent/KR100239689B1/en

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    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
    • H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
    • H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
    • H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
    • C—CHEMISTRY; METALLURGY
    • C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
    • C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
    • C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
    • C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
    • C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
    • C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
    • C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material

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  • Engineering & Computer Science (AREA)
  • Chemical & Material Sciences (AREA)
  • Materials Engineering (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Chemical Vapour Deposition (AREA)

Abstract

본 발명은 고상(SOLID STATE) 전구체(PRECURSOR) 전송방법 및 장치에 관한 것으로, 종래에는 고상의 전구체를 전송하기 위해서 솔벤트에 전송하고자 하는 고체를 녹인뒤 액체화하여 전송하므로 솔벤트에 의해 오염이 발생하는 문제점이 있었던 바, 본 발명 고상 전구체 전송방법 및 장치에 있어서는 종래와 같이 고상 전구체를 솔벤트에 녹이지 않고 캐리어 가스만으로 전송이 가능하므로 불순물이 없는 고순도의 박막을 얻을 수 있는 효과가 있다. 그리고, 전구체의 수납용기를 카트리지와 할 수 있기 때문에 사용후 교환이 용이하며, 자연성의 유독성 전구체의 사후 처리가 간단한 효과가 있다.The present invention relates to a solid state precursor (PRECURSOR) transmission method and apparatus, conventionally, to transmit the solid phase to the solvent in order to transmit the solid phase dissolved in the liquid and transmitted to the problem that the contamination occurs by the solvent As a result, in the solid-state precursor transfer method and apparatus of the present invention, since the solid-state precursor can be transferred using only a carrier gas without dissolving in a solvent, a high purity thin film free of impurities can be obtained. In addition, since the storage container of the precursor can be used with the cartridge, it is easy to exchange after use, and the post-treatment of the natural toxic precursor has a simple effect.

Description

고상 전구체 전송방법 및 장치Solid precursor transfer method and apparatus

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명 고상 전구체 전송장치의 일실시예를 보인 개략구성도.Figure 2 is a schematic diagram showing an embodiment of the present invention solid-state precursor transmission device.

제3도는 제2도의 다른 실시예를 보인개략구성도.3 is a schematic diagram showing another embodiment of FIG.

Claims (8)

분쇄한 고상의 전구체에 가열된 캐리어 가스를 흘려서 고체 상태의 전구체를 기화하여 반응기의 내로 공급하는 것을 특징으로 하는 고상 전구체 전송방법.A solid phase precursor transfer method comprising flowing a carrier gas heated to a ground solid precursor and vaporizing the precursor in a solid state into the reactor. 제1항에 있어서, 상기 고상 전구체는 Ba(DPM)2, Sr(DPM)2, TI(O-i-P)(DPM)2혹은 Ba(DPM)2, Sr(DPM)2, TI(O-i-PO)(DPM)2중 어느 하나인 것을 특징으로 하는 고상 전구체 전송방법.The method of claim 1, wherein the solid precursor is Ba (DPM) 2 , Sr (DPM) 2 , TI (OiP) (DPM) 2 or Ba (DPM) 2 , Sr (DPM) 2 , TI (Oi-PO) ( DPM) 2 , any one of the solid phase precursor transmission method characterized in that. 제1항에 있어서, 상기 캐리어 가스는 Ar가스, N2가스, He가스 중 어느 하나인 것을 특징으로 하는 고상 전구체 전송방법.The method of claim 1, wherein the carrier gas is any one of Ar gas, N 2 gas, and He gas. 제1항에 있어서, 상기 캐리어 가스의 온도는 200~300℃인 것을 특징으로 하는 고상 전구체 전송방법.The method of claim 1, wherein the temperature of the carrier gas is 200 ~ 300 ℃. 제1항에 있어서, 상기 기화된 고상 전구체의 증기압은 1~10torr인 것을 특징으로 하는 고상 전구체 전송방법.The method of claim 1, wherein the vapor pressure of the vaporized solid precursor is 1 to 10 torr. 제1항에 있어서, 상기 고상 전구체가 증착되는 웨이퍼의 가열온도는 0~500℃인 것을 특징으로 하는 고상 전구체 전송방법.The method of claim 1, wherein the heating temperature of the wafer on which the solid precursor is deposited is 0 to 500 ° C. 분쇄한 고상의 전구체가 수납되는 카트리지와, 그 카트리지의 양측에 각각 설치되는 고정구와, 그 각각의 고정구에 연결설치되는 가스라인과, 그 가스라인 상에 각각 설치되는 밸브로 구성된 것을 특징으로 하는 고상 전구체 전송장치.A solid phase comprising a cartridge in which the pulverized solid precursor is accommodated, a fixture provided on each side of the cartridge, a gas line connected to each of the fixtures, and a valve provided on the gas line, respectively. Precursor transmitter. 제7항에 있어서, 상기 카트리지의 외측에 캐리어 가스를 가열하기 위한 히팅코일이 감겨져 있고, 상기 각각의 가스라인을 연결하기 위하여 유량조절기가 구비된 연결라인이 치된 것을 특징으로 하는 고상 전구체 전송장치.8. The solid-state precursor transmission device according to claim 7, wherein a heating coil for heating a carrier gas is wound on the outside of the cartridge, and a connection line having a flow regulator is connected to connect each gas line. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950046196A 1995-12-02 1995-12-02 Transfer device of solid state precursor KR100239689B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950046196A KR100239689B1 (en) 1995-12-02 1995-12-02 Transfer device of solid state precursor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950046196A KR100239689B1 (en) 1995-12-02 1995-12-02 Transfer device of solid state precursor

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KR970052056A true KR970052056A (en) 1997-07-29
KR100239689B1 KR100239689B1 (en) 2000-01-15

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