KR100239689B1 - Transfer device of solid state precursor - Google Patents
Transfer device of solid state precursor Download PDFInfo
- Publication number
- KR100239689B1 KR100239689B1 KR1019950046196A KR19950046196A KR100239689B1 KR 100239689 B1 KR100239689 B1 KR 100239689B1 KR 1019950046196 A KR1019950046196 A KR 1019950046196A KR 19950046196 A KR19950046196 A KR 19950046196A KR 100239689 B1 KR100239689 B1 KR 100239689B1
- Authority
- KR
- South Korea
- Prior art keywords
- precursor
- solid
- cartridge
- solvent
- solid phase
- Prior art date
Links
Classifications
-
- H—ELECTRICITY
- H01—ELECTRIC ELEMENTS
- H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
- H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
- H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
- H01L21/02104—Forming layers
- H01L21/02107—Forming insulating materials on a substrate
- H01L21/02109—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates
- H01L21/02112—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer
- H01L21/02172—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides
- H01L21/02197—Forming insulating materials on a substrate characterised by the type of layer, e.g. type of material, porous/non-porous, pre-cursors, mixtures or laminates characterised by the material of the layer the material containing at least one metal element, e.g. metal oxides, metal nitrides, metal oxynitrides or metal carbides the material having a perovskite structure, e.g. BaTiO3
-
- C—CHEMISTRY; METALLURGY
- C23—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; CHEMICAL SURFACE TREATMENT; DIFFUSION TREATMENT OF METALLIC MATERIAL; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL; INHIBITING CORROSION OF METALLIC MATERIAL OR INCRUSTATION IN GENERAL
- C23C—COATING METALLIC MATERIAL; COATING MATERIAL WITH METALLIC MATERIAL; SURFACE TREATMENT OF METALLIC MATERIAL BY DIFFUSION INTO THE SURFACE, BY CHEMICAL CONVERSION OR SUBSTITUTION; COATING BY VACUUM EVAPORATION, BY SPUTTERING, BY ION IMPLANTATION OR BY CHEMICAL VAPOUR DEPOSITION, IN GENERAL
- C23C16/00—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes
- C23C16/44—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating
- C23C16/448—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials
- C23C16/4481—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material
- C23C16/4482—Chemical coating by decomposition of gaseous compounds, without leaving reaction products of surface material in the coating, i.e. chemical vapour deposition [CVD] processes characterised by the method of coating characterised by the method used for generating reactive gas streams, e.g. by evaporation or sublimation of precursor materials by evaporation using carrier gas in contact with the source material by bubbling of carrier gas through liquid source material
Landscapes
- Engineering & Computer Science (AREA)
- Chemical & Material Sciences (AREA)
- Materials Engineering (AREA)
- Physics & Mathematics (AREA)
- Condensed Matter Physics & Semiconductors (AREA)
- General Physics & Mathematics (AREA)
- Manufacturing & Machinery (AREA)
- Computer Hardware Design (AREA)
- Microelectronics & Electronic Packaging (AREA)
- Power Engineering (AREA)
- Chemical Vapour Deposition (AREA)
Abstract
본 발명은 고상(SOLID STATE) 전구체(PRECURSOR) 전송장치에 관한 것으로, 종래에는 고상의 전구체를 전송하기 위해서 솔벤트에 전송하고자 하는 고체를 녹인뒤 액체화하여 전송하므로 솔벤트에 의해 오염이 발생하는 문제점이 있었던 바, 본 발명 고상 전구체 전송장치는 종래와 같이 고상 전구체를 솔벤트에 녹이지 않고 캐리어 가스만으로 전송이 가능하므로 불순물이 없는 고순도의 박막을 얻을 수 있는 효과가 있다. 그리고, 전구체의 수납용기를 카트리지화 할 수 있기 때문에 사용후 교환이 용이하며, 직렬형태로 카트리지가 배치되므로 반응기내로 충분한 전구체의 공급이 이루어진다.The present invention relates to a solid phase precursor (PRECURSOR) transmission device, in the prior art, since the solid to be transmitted to the solvent to be transmitted to the solvent in order to transfer the solid phase precursor has a problem that the contamination occurs by the solvent Bar solid-state precursor transmission device of the present invention can transmit the solid-state precursor using only a carrier gas without dissolving in a solvent as in the prior art has the effect of obtaining a high purity thin film free of impurities. In addition, since the precursor container can be cartridgeized, exchange after use is easy, and since the cartridges are arranged in series, sufficient precursor is supplied into the reactor.
Description
제1도는 종래 고상 전구체 전송장치를 보인 것으로,1 shows a conventional solid-state precursor transmitter,
(a)는 버블링 시스템을 보인 개략구성도.(a) is a schematic diagram showing a bubbling system.
(b)는 고상반응기를 보인 개략구성도.(b) is a schematic diagram showing a solid phase reactor.
제2도는 본 발명 고상 전구체 전송장치의 일실시례를 보인 개략구성도.Figure 2 is a schematic diagram showing an embodiment of the solid-state precursor transmission device of the present invention.
제3도는 제3도의 다른 실시례를 보인 개략구성도.3 is a schematic diagram showing another embodiment of FIG.
* 도면의 주요부분에 대한 부호의 설명* Explanation of symbols for main parts of the drawings
10 : 카트리지 11,11' : 고정구10: cartridge 11,11 ': fixture
12,12' : 가스공급/가스배출 라인 13,13' : 밸브12,12 ': Gas supply / gas discharge line 13,13': Valve
20 : 히팅코일 21 : 유량조절기20: heating coil 21: flow regulator
22 : 연결라인22: connection line
본 발명은 고상 전구체 전송장치에 관한 것으로, 특히 고상(SOLID STATE)의 전구체(PRECURSOR)를 기화시켜 반응기 내로 반입하여 반도체 웨이퍼에 증착할 수 있도록 하는데 적합한 고상 전구체 전송장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a solid state precursor transfer apparatus, and more particularly, to a solid state precursor transfer apparatus suitable for vaporizing a precursor (PRECURSOR) of a solid phase (SOLID STATE) into a reactor to be deposited on a semiconductor wafer.
최근들어 반도체 기술의 발전에 따라 소자의 집적도가 증가하고, 컨택트(CONTACT), 바이어 홀(VIA HOLE)등의 종횡비(ASPECT RATIO)가 커지면서 화학기상증착(CHEMICAL VAPOR DEPOSITION)의 중요성이 더욱 커지고 있다.In recent years, with the development of semiconductor technology, the integration of devices has increased, and the importance of chemical vapor deposition has increased as the contact ratio and contact hole (VIA HOLE) have increased.
금속배선 공정에서도 화학기상증착법에 의한 기술이 시도되고 있는데, 지금까지 알려진 금속박막의 증착원(SOURCE)은 대개가 액상(LIQUID)이거나 고상(SOLID)이다.In the metallization process, a technique using a chemical vapor deposition method has been attempted. The source (SOURCE) of metal thin films so far known is usually liquid phase (LIQUID) or solid phase (SOLID).
액상(LOQUID) 증착원(SOURCE)의 경우 공급하는 방법 및 장치가 많이 개발되어 있으나 고상(SOLID STATE)의 경우 아직까지 일정한 양을 재현성(REPRODUCIBILITY)있게 기화하여 반입시킬 수 있는 방법 및 장치는 없다.Although a lot of methods and apparatuses for supplying a LOQUID deposition source have been developed, there are no methods and apparatuses capable of vaporizing a certain amount of REPRODUCIBILITY and bringing it into a solid phase.
제1도는 종래 고상 전구체의 공급장치를 보인 것으로, (a)는 버블링 시스템의 개략구성도이고, (b)는 고상 반응기의 개략구성도이다.1 shows a conventional solid phase precursor supply apparatus, (a) is a schematic diagram of a bubbling system, and (b) is a schematic diagram of a solid phase reactor.
먼저, 일반적으로 가장 많이 사용되는 버블링 시스템(BUBLING SYSTEM)을 설명하겠다.First, the most commonly used bubbling system will be described.
버블링 시스템은 액체가 수납된 용기(1)의 일측에 캐리어 가스를 공급하기 위한 공급라인(2)과 전구체를 전송하기 위한 전송라인(3)으로 구성되어, 캐리어 가스를 이용하여 주로 액체 전구체를 전송시 사용한다. 이 시스템의 경우 장치가 간단한 반면 액체 전구체에만 사용이 가능하며 고상 전구체의 전송을 위해서는 고체를 솔벤트(SOLVENT)를 녹여 버블링 시스템을 이용하는 방법이 있다. 이방법은 고체의 전송이 가능하다는 장점은 있으나 솔벤트에 의한 고체의 오염가능성이 높다는 단점이 있다. 버블링 시스템 이외에 상품화된 액체 공급장치(LIQUID DELIVERY SYSTEM)들이 있으나(LDS, DLI), 이들 모두 기본적으로 액체 또는 솔벤트에 고체를 녹인 액체를 전송한다는 측면에서 고상 전구체의 전송에 있어서 같은 문제를 가지고 있다.The bubbling system is composed of a supply line 2 for supplying a carrier gas to one side of the container 1 containing the liquid and a transmission line 3 for transmitting the precursor. Used for transmission. While the device is simple, it can only be used for liquid precursors, and there is a method of using a bubbling system by dissolving a solid solvent to dissolve solids. This method has the advantage of being able to transfer solids, but has the disadvantage that the possibility of contamination of solids by solvent is high. In addition to the bubbling system, there are commercially available liquid supply systems (LDS, DLI), but they all share the same problems with the transport of solid-state precursors in terms of transporting liquids dissolved in solids or solvents. .
다음은 고상 반응기의 내부에서 고상 전구체의 이동하는 방법을 설명하면 다음과 같다.Next, a method of moving the solid precursor inside the solid phase reactor is as follows.
제1도의 (b)는 종래 고상 반응기의 구조를 보인 개략구성도로서, 고상 반응기는 앞에서 언급한 바와 같이 고상 전구체를 기화시켜 반응기 내로 반입하기 위한 목적이 아니라 고상 반응기에 반응가스(REACTANT GAS)를 유입시켜 그 안에서 실제 반응이 일어난 뒤 반응물을 시편이 있는 곳으로 이동시키는 장치로서 그 목적은 고상 전구체의 공급장치와 다르다.(B) of FIG. 1 is a schematic diagram showing the structure of a conventional solid phase reactor. The solid phase reactor, as mentioned above, is not intended to vaporize the solid precursor and bring it into the reactor, but to introduce a reactive gas into the solid phase reactor. It is a device that moves the reactants to where the specimen is after the actual reaction takes place in it, and the purpose is different from that of the solid phase precursor supply.
이상에서 상세히 설명한 바와 같이 고상의 전구체를 전송하기 위해서는 솔벤트에 전송하고자 하는 고체를 녹인뒤 액체화하여 전송하므로 솔벤트에 의해 오염이 발생할뿐만 아니라 전구체가 충분히 공급되지 못하는 문제점이 있었다.As described in detail above, in order to transmit the solid phase precursor, since the solid to be transmitted to the solvent is dissolved and then liquefied and transmitted, there is a problem that the precursor is not sufficiently supplied as well as contamination occurs by the solvent.
상기와 같은 문제점을 감안하여 안출한 본 발명의 목적은 고체를 액체화하지 않고 전송함과 아울러 충분한 전구체를 반응기로 공급할 수 있도록 하는데 적합한 고상 전구체 전송장치를 제공함에 있다.SUMMARY OF THE INVENTION An object of the present invention devised in view of the above problems is to provide a solid phase precursor transmission device suitable for transporting a solid without liquefying and supplying sufficient precursor to the reactor.
상기와 같은 본 발명의 목적을 달성하기 위하여 직렬형태로 설치됨과 아울러 분쇄한 고상의 전구체가 수납되어 있는 카트리지와, 그 카트리지의 양측에 위치되어 카트리지를 고정할 수 있도록 설치되어 있는 한쌍의 고정구와, 그 고정구들의 양측으로 각각 연결되어 있는 가스공급/가스배출라인과, 그 가스공급/가스배출 라인 상에 각각 설치되는 밸브들을 구비하여서 구성되는 것을 특징으로 하는 고상 전구체 전송장치가 제공된다.In order to achieve the object of the present invention as described above, the cartridge is installed in a series, and the pulverized solid precursor is housed, and a pair of fasteners which are positioned on both sides of the cartridge to fix the cartridge, Provided is a solid-state precursor transmission device comprising a gas supply / gas discharge line connected to both sides of the fixtures, and valves respectively provided on the gas supply / gas discharge line.
이하, 상기와 같은 본 발명 고상 전구체 전송방법 및 장치의 일실시례를 상세히 설명하면 다음과 같다.Hereinafter, an embodiment of the present invention the solid-state precursor transmission method and apparatus as described above in detail.
본 발명은 분쇄한 알갱이로 된 고상의 전구체인 Ba(DPM)2, Sr(DPM)2, TiO(DPM)2에 가열된 캐리어 가스(CARRIER GAS)인 Ar 가스를 흘려서 고상 전구체의 기화(SUBLOMATION)를 이용해 고상의 전구체를 반응기의 내부로 공급함으로써 웨이퍼에 BST(BARIUM STRONTIUM TITANATE)박막을 증착시키는 것이다.The present invention is a gaseous solid precursor (SUBLOMATION) by flowing Ar gas, which is heated carrier gas (CARIER GAS), to Ba (DPM) 2, Sr (DPM) 2, TiO (DPM) 2, which are solid precursors It is to deposit a BARI (BARIUM STRONTIUM TITANATE) thin film on the wafer by supplying a solid precursor to the inside of the reactor using.
또한, 상기 전구체로는 Ba(DPM)2, Sr(DPM)2, TI(O-i-P)(DPM)2를 사용하여도 무방하고, 캐리어 가스로 Ar 가스를 예로 설명하였으나 꼭 그에 한정하는 것을 아니고 N2 가스 혹은 He 가스를 사용하여도 무방하다.In addition, Ba (DPM) 2, Sr (DPM) 2, TI (OiP) (DPM) 2 may be used as the precursor, and Ar gas is described as an example of a carrier gas, but the present invention is not limited thereto. Alternatively, He gas may be used.
그리고, 상기 캐리어 가스의 온도는 200~300℃가 적당하고, 기화된 고상 전구체의 증기압은 1~10Torr정도가 바람직하며, 증착되는 웨이퍼의 가열온도는 0~500℃로 유지하는 것이 바람직하다.The temperature of the carrier gas is preferably 200 to 300 ° C., the vapor pressure of the vaporized solid precursor is preferably about 1 to 10 Torr, and the heating temperature of the deposited wafer is preferably maintained at 0 to 500 ° C.
상기와 같이 생성된 박막을 BST(BARIUM STRONTIUM TITANATE)박막이라고 하며 이러한 BST박막이 증착된 웨이퍼는 고유전율을 이용한 디램의 캐패시터(CAPACITOR)등에 사용된다.The thin film produced as described above is called a BST (BARIUM STRONTIUM TITANATE) thin film, and the wafer on which the BST thin film is deposited is used for a capacitor of a DRAM using a high dielectric constant.
그리고, 상기와 같은 방법을 구현하기 위한 본 발명의 고상 전구체 전송장치실시례를 설명하면 다음과 같다.In addition, the embodiment of the solid-state precursor transmission device of the present invention for implementing the above method is as follows.
제2도는 본 발명 고상 전구체 전송장치의 일실시례를 보인 개략구성도로서, 도시된 바와 같이, 분쇄한 고상의 전구체가 수납됨과 아울러 직렬형태로 설치되는 카트리지(10)의 양측에 고정구(11)(11')가 설치되어 있고, 그 각각의 고정구(11)(11')들에는 각각 가스공급/가스배출 라인(12)(12')이 연결설치도어 있으며, 그 가스공급/가스배출 라인(12)(12')상에 각각 설치되는 밸브(13)(13')들이 설치되어 있다.2 is a schematic configuration diagram showing an embodiment of the solid-state precursor transmission device of the present invention, as shown in the figure, the fasteners 11 are provided on both sides of the cartridge 10 which is installed in series as well as receiving the pulverized solid precursors. 11 'is provided, and each of the fixtures 11 and 11' is provided with a gas supply / gas discharge line 12 and 12 ', respectively, and the gas supply / gas discharge line ( 12 and 12 'are provided with valves 13 and 13' respectively provided.
제3도는 제2도의 다른 실시례를 보인 개략구성도로서, 도시된 바와 같이, 카트리지(10)의 외측에 캐리어 가스를 가열하기 위한 히팅코일(20)이 감겨져 있고, 상기 각각의 가스공급/가스배출 라인(12)(12')을 연결하기 위하여 유량조절기(21)가 구비된 연결라인(22)이 설치되어 있다.FIG. 3 is a schematic structural view showing another embodiment of FIG. 2, and as shown, a heating coil 20 for heating a carrier gas is wound on the outside of the cartridge 10, and the respective gas supply / gas In order to connect the discharge lines 12 and 12 ', a connection line 22 having a flow regulator 21 is provided.
즉, 상기와 같이 고상의 전구체를 분쇄한 알갱이가 수납된 카트리지(10)를 고정구(11)(11')들의 사이에 장착하고, 상기 실시례에서와 같이 가열된 캐리어 가스나 카트리지(10)의 외부벽을 히팅코일(20)로 가열하는 상태에서 가스공급 라인(12)으로 캐리어 가스를 통과시키면 고상의 전구체가 기화되고, 이와 같이 기화된 고상전구체들은 캐리어가스와 함께 가스배출 라인(12')을 통하여 반응기의 내부로 공급되어 증착이 이루어지며, 이러한 경우 기화되는 전구체의 양은 전구체 주위의 온도뿐만 아니라, 전구체의 표면적(알갱이들의 표면적 총합)과 관계가 있으므로 사용시간이 지남에 따라 기화되는 전구체의 양이 작아지게 된다.That is, the cartridge 10 containing the granulated pulverized solid precursor is accommodated between the fixtures 11 and 11 ', and the heated carrier gas or cartridge 10 as in the above embodiment is mounted. When the carrier gas is passed through the gas supply line 12 while the outer wall is heated by the heating coil 20, the solid phase precursor is vaporized, and the vaporized solid precursors are gas discharge line 12 ′ together with the carrier gas. The deposition is supplied to the inside of the reactor through the deposition, in which case the amount of precursor vaporized is related not only to the temperature around the precursor, but also to the surface area of the precursor (total surface area of the grains) and thus the vaporization of the precursor vaporized over time. The amount becomes smaller.
이와 같은 본 발명의 구조에서는 전구체의 알갱이가 항상 최적의 상태로 패킹(PACKING) 되어 있으므로 전구체의 양변화가 적으며, 전구체의 사용에 따른 반응기 내부로의 반입량 변화를 없애기 위해 카트리지(10)의 양쪽에 일정한 압력을 가해 항상 일정한 충진상태를 유지할 수 있도록 한다.In the structure of the present invention, since the grains of the precursor are always packed in an optimal state, the amount of the precursor is small, and both sides of the cartridge 10 are removed in order to eliminate the change in the amount of the precursor into the reactor according to the use of the precursor. Apply constant pressure to ensure constant filling at all times.
이상에서 상세히 설명한 바와 같이 본 발명의 고상 전구체 전송 장치에 있어서는 종래와 같이 고상 전구체를 솔벤트에 녹이지 않고 캐리어 가스만으로 전송이 가능하므로 불순물이 없는 고순도의 박막을 얻을 수 있는 효과가 있다. 그리고, 전구체의 수납용기를 카트리지화하여 직렬형태로 설치함으로써 기화된 전구체가 충분하게 반응기내로 공급되어 재형성을 확보하는 효과가 있을뿐아니라, 카트리지의 외측에 설치된 히팅코일로 카트리지를 가열함으로써 카트리지내의 전구체의 기화를 촉진하게 된다.As described in detail above, in the solid-state precursor transmission device of the present invention, since the solid-state precursor can be transferred using only a carrier gas without dissolving in a solvent, a high purity thin film free of impurities can be obtained. In addition, by cartridgeizing the precursor container and installing the cartridge in series, the vaporized precursor is sufficiently supplied into the reactor to ensure remodeling, and the cartridge is heated by a heating coil installed outside the cartridge. It will promote the vaporization of the precursor in the interior.
Claims (2)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950046196A KR100239689B1 (en) | 1995-12-02 | 1995-12-02 | Transfer device of solid state precursor |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950046196A KR100239689B1 (en) | 1995-12-02 | 1995-12-02 | Transfer device of solid state precursor |
Publications (2)
| Publication Number | Publication Date |
|---|---|
| KR970052056A KR970052056A (en) | 1997-07-29 |
| KR100239689B1 true KR100239689B1 (en) | 2000-01-15 |
Family
ID=19437456
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950046196A KR100239689B1 (en) | 1995-12-02 | 1995-12-02 | Transfer device of solid state precursor |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR100239689B1 (en) |
-
1995
- 1995-12-02 KR KR1019950046196A patent/KR100239689B1/en not_active IP Right Cessation
Also Published As
| Publication number | Publication date |
|---|---|
| KR970052056A (en) | 1997-07-29 |
Similar Documents
| Publication | Publication Date | Title |
|---|---|---|
| US6454860B2 (en) | Deposition reactor having vaporizing, mixing and cleaning capabilities | |
| KR100397015B1 (en) | Metal oxide film formation method and apparatus | |
| US7547003B2 (en) | Vaporizing apparatus and semiconductor processing system | |
| US5629229A (en) | Metalorganic chemical vapor deposition of (Ba1-x Srx)RuO3 /(Ba1-x Srx)TIO3 /(Ba1-x Srx)TiO3 /(Ba1- Srx)RuO3 capacitors for high dielectric materials | |
| US6338759B1 (en) | Metal organic chemical vapor deposition apparatus and deposition method | |
| TW531796B (en) | Apparatus and method for depositing thin film on wafer using atomic layer deposition | |
| WO2011070945A1 (en) | Thin film manufacturing apparatus, thin film manufacturing method, and method for manufacturing semiconductor device | |
| JPH0789544B2 (en) | Steam generator for chemical vapor deposition equipment | |
| US5648113A (en) | Aluminum oxide LPCVD system | |
| WO2001098556A3 (en) | Temperature controlled gas feedthrough | |
| US20060070575A1 (en) | Solution-vaporization type CVD apparatus | |
| US6863021B2 (en) | Method and apparatus for providing and integrating a general metal delivery source (GMDS) with atomic layer deposition (ALD) | |
| CN101569841B (en) | Reagent dispensing apparatus and delivery method | |
| KR101156305B1 (en) | METHOD FOR FORMING SrTiO3 FILM AND STORAGE MEDIUM | |
| KR100239689B1 (en) | Transfer device of solid state precursor | |
| KR100756626B1 (en) | Gas mixing port and liquid reagent delivery system using the same | |
| US20120071001A1 (en) | Vaporizing and feed apparatus and vaporizing and feed method | |
| KR100428877B1 (en) | Method of manufacturing insulating layer of semiconductor device using en solution | |
| KR20020009215A (en) | Vaporization apparatus for supplying source gas to chemical vapor deposition chamber | |
| US20240133033A1 (en) | Reactant delivery system and reactor system including same | |
| US20230175127A1 (en) | Remote solid source reactant delivery systems for vapor deposition reactors | |
| JP2795868B2 (en) | CVD equipment | |
| KR20010110909A (en) | Apparatus for Supplying a Precursor | |
| JP4542641B2 (en) | Semiconductor manufacturing apparatus and barrier metal film forming method using this apparatus | |
| JPH07211644A (en) | Method and equipment for depositing thin film |
Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| A201 | Request for examination | ||
| E902 | Notification of reason for refusal | ||
| AMND | Amendment | ||
| E801 | Decision on dismissal of amendment | ||
| E601 | Decision to refuse application | ||
| AMND | Amendment | ||
| J201 | Request for trial against refusal decision | ||
| B701 | Decision to grant | ||
| GRNT | Written decision to grant | ||
| FPAY | Annual fee payment |
Payment date: 20050923 Year of fee payment: 7 |
|
| LAPS | Lapse due to unpaid annual fee |