CN206562453U - A kind of metal organic source doper for MOCVD - Google Patents
A kind of metal organic source doper for MOCVD Download PDFInfo
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- CN206562453U CN206562453U CN201720175665.5U CN201720175665U CN206562453U CN 206562453 U CN206562453 U CN 206562453U CN 201720175665 U CN201720175665 U CN 201720175665U CN 206562453 U CN206562453 U CN 206562453U
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Abstract
The utility model discloses a kind of metal organic source doper for MOCVD, including：Constant-temp. electronic heater；Material pot, in constant-temp. electronic heater, including cylindrical stainless steel pot and cover plate, intake interface and outlet interface are provided with the pot；Argon bottle, pressure-reducing valve, first throttle valve, flexible pipe, intake interface are sequentially connected by pipeline；Constant temperature steel pipe, is connected with thermostat circuit, the outlet interface is sequentially connected by constant temperature steel pipe, flowmeter, second throttle, three-way switch valve, coating machine settling chamber；Returnable bottle, passes through another constant temperature fastener for connection three-way switch valve.The utility model has the functions such as temperature control, the discharge of miscellaneous gas；Small volume, not by organic source state limit, is applicable to solid or liquid, is also applied for the presoma of low boiling, highly volatile；Inexpensive lightweight；It is passed through stable gas flow, charging simplicity, without air pollution.
Description
Technical field
The utility model is related to incrustation coating or tool coating manufacture field, more particularly to a kind of for MOCVD's
Metal organic source doper.
Background technology
MOCVD（Metal-organicChemicalVaporDeposition- metallo-organic compound chemical vapor depositions
Form sediment) be a kind of new vapour phase epitaxy growing technology grown up on the basis of vapor phase epitaxial growth (VPE), be with III race,
The organic compound and V of II race's element, the hydride of VI race's element etc. are as crystal growth source material, in pyrolysis mode
In the enterprising promoting the circulation of qi phase epitaxy of substrate, various III-V races, group Ⅱ-Ⅵ compound semiconductor and their multivariate solid solution are grown
Thin layer monocrystal material.The organic source of heat resolve includes the supply of III race's metallo-organic compound, V races hydride and doped source.
Doped source has two classes, and a class is metallo-organic compound, and another kind of is hydride, and its transportation method is closed with Organometallic respectively
Transporting for material resource and hydride source is identical.Usually used source is inflammable, explosive, toxicity very big material, therefore in heating dress
In the design philosophy put, system sealing is generally considered, flow, temperature control are accurate, component conversion is rapid, and system will
It is compact etc.., it is necessary to which heat resolve is typically organic solid and liquid, after gas can be directly or through dilution in current application
Settling chamber is entered by pipeline.
Utility model content
For above-mentioned technical problem, the utility model, which devises one kind, to be used for MOCVD devices or reequips other ion film platings
The metal organic source doper of machine equipment.
The technical solution adopted in the utility model is as follows：
A kind of metal organic source doper for MOCVD, including：
Constant-temp. electronic heater；
Material pot, in constant-temp. electronic heater, including cylindrical stainless steel pot and cover plate, is set in the pot
There are intake interface and outlet interface；
Argon bottle, pressure-reducing valve, first throttle valve, flexible pipe, intake interface are sequentially connected by pipeline；
Constant temperature steel pipe, is connected with thermostat circuit, the outlet interface is sequentially connected by constant temperature steel pipe, flowmeter,
Two choke valves, three-way switch valve, coating machine settling chamber；
Returnable bottle, passes through another constant temperature fastener for connection three-way switch valve.
The remnants that first throttle valve and second throttle in this programme are used to when emptying initial exist in gas pipeline are empty
Gas, it is ensured that be passed through the gas purity of cvd furnace.According to the registration difference of flowmeter and electromagnetic valve switch, it can calculate and be passed through organic source
Gas volume, so as to control metal organic source addition.Before the mixed gas of organic source and argon gas is passed through coating machine settling chamber
Certain pipeline at three-way change-over valve is installed, can have good luck doper and coating machine settling chamber by insantaneous break metal as needed
Connection, can play protection coating machine purpose, while can be by unnecessary organic source cooling of discharge, collection.
Further, described constant temperature steel pipe includes insulating tape, heat insulating asbestos shingle, adding thermal resistance successively from outside to inside
Temperature sensor is set in silk, stainless steel tube, the stainless steel tube, and described resistive heater connects temperature controller by circuit.
Temperature controller is heated stainless-steel pipe by resistive heater, so as to reach the organic source gas heat insulating that will be evaporated, in gas
The purpose not condensed in transmitting procedure.
Further, quartz glass plate is provided with the middle of described cover plate, with resistance to pressure is strong, good endurance, be not easy to
Raw material reaction, visual advantage.
Further, it is provided with seal washer between described cover plate and pot.
Further, the bottom of pot body is provided with material holding chamber.
Compared with prior art, the utility model has advantages below：
1st, the utility model has the functions such as temperature control, the discharge of miscellaneous gas, the control of organic source flux, will by being passed through argon gas
Heating evaporation decomposites the organic source gas come and brought into settling chamber, so that realizing needs the doping of element；
2nd, do not limited by presoma state categories, while suitable for solid and liquid, can meet before low boiling, highly volatile
Drive the use condition of body；
3rd, the utility model heater is passed through gas flow stabilization, noresidue air pollution；
4th, device volume is smaller, with charging the visual design, facilitates raw material to supply；
5th, meeting inexpensive light-weight design, cost is relatively low simultaneously, simple and easy to apply.
Brief description of the drawings
Fig. 1 is the overall structure diagram of the utility model embodiment.
Fig. 2 the utility model material pot structural representations.
Fig. 3 be in Fig. 2 A-A to schematic diagram.
Fig. 4 is the utility model constant temperature steel tube section schematic diagram.
Shown in figure：1- first throttle valves；2- pressure-reducing valves；3- argon bottles；4- flexible pipes；5- constant-temp. electronic heaters；6- is contained
Expect pot；7- constant temperature steel pipes；8- second throttle；9- coating machines settling chamber；10- three-way switch valves；11- returnable bottles；12- cover plates；
13- quartz glass plates；14- seal washers；15- intake interfaces；16- material holding chamber；17- outlet interfaces；18- insulating tapes；19- every
Hot asbestos shingle；20- resistive heaters；21- stainless steel tubes.
Embodiment
It is with reference to technical scheme, accompanying drawing and thin with the DLC for depositing copper doped to be best understood from the utility model
Exemplified by film, the operating method and principle of this heater are elaborated.
Embodiment one
As shown in Figure 1 to Figure 3, a kind of metal organic source doper for MOCVD, including：
Constant-temp. electronic heater 5, material pot 6, argon bottle 3, constant temperature steel pipe 7, returnable bottle 11,
The material pot 6 is in constant-temp. electronic heater 5, including cylindrical stainless steel pot and cover plate 12, the pot
Intake interface 15 and outlet interface 17 are provided with body；Seal washer 14, the pot are provided between described cover plate and pot
Body bottom is provided with material holding chamber 16.Quartz glass plate 13 is provided with the middle of described cover plate 12, with resistance to pressure is strong, durability
Well, raw material reaction, visual advantage (see Fig. 2 and Fig. 3) are not easy to, by visualization, the design of high withstand voltage, can intuitively be seen
Remaining presoma, convenient supply are observed, while low boiling, the use condition of volatile liquid precursors are met, even in Sheng
Boiling point is reached in material pot 6, its high withstand voltage characteristic can ensure use intensity, the steam pressure in material pot 6 is higher than liquid precursor
Boiling, the appearance of unnecessary volatilization are then prevented effectively from after the saturated vapour pressure of body；
The argon bottle 3 is sequentially connected pressure-reducing valve 2, first throttle valve 1, flexible pipe 4, intake interface 15 by pipeline；
The constant temperature steel pipe 7 is connected with thermostat circuit, and the outlet interface 17 is sequentially connected by constant temperature steel pipe 7, flowed
Gauge, second throttle 8, three-way switch valve 10, coating machine settling chamber 9；
The returnable bottle 11 connects three-way switch valve 10 by another constant temperature steel pipe 7.
First throttle valve 1 and second throttle 8 in the present embodiment is residual in gas pipeline for existing when emptying initial
Remaining air, it is ensured that be passed through the gas purity of cvd furnace.According to the registration difference of flowmeter and electromagnetic valve switch, it can calculate and be passed through
Machine source gas volume, so as to control metal organic source addition.Coating machine deposition is passed through in the mixed gas of organic source and argon gas
Three-way change-over valve is installed at certain pipeline before room, there can be good luck doper to be sunk with coating machine by insantaneous break metal as needed
The connection of product room, can play the purpose of protection coating machine, while can be by unnecessary organic source cooling of discharge, collection.
Specifically, as shown in figure 4, described constant temperature steel pipe 7 includes insulating tape 18, heat-insulated asbestos successively from outside to inside
Watts 19, temperature sensor, described resistive heater are set in resistive heater 20, stainless steel tube 21, the stainless steel tube 21
20 connect temperature controller by circuit.Temperature controller is heated stainless-steel pipe by resistive heater 20, so that reaching to evaporate
Organic source gas heat insulating, the purpose that is not condensed during gas transport.
Embodiment two
A kind of organic source doping method based on the metal organic source doper, including step：
(1) before coating machine starts depositing diamond-like, constant-temp. electronic heater 5 and temperature controller is opened, makes material pot
6 and constant temperature steel pipe 7 heat up, be preheated to temperature in use, the temperature-controlled precision of the constant-temp. electronic heater 5 and temperature controller is ± 0.1
DEG C, ensure the metal organic source Cu (tmhd) of the metallic copper after heat resolve evaporation by being preheated to temperature in use2Not in constant temperature
Condensed during being transmitted in steel pipe 7；
(2) reach after temperature in use, first throttle valve 1 is closed, second throttle 8 is opened, now the gas of material pot 6
Coating machine settling chamber 9 is then evacuated to 5*10 by pressure equal to the air pressure of coating machine settling chamber 9 with vavuum pump-3Pa, metal is had
The residual air discharge that machine source doping installs pipes interior；
(3) first throttle valve 1 is opened, second throttle 8 is closed, it is slow logical respectively to material pot 6 and coating machine settling chamber 9
Enter argon gas and reacting gas to operating air pressure 10-1Pa, the step disconnects coating machine deposition after air is excluded by closing valve
Room 9 and the connection of organic source doper, independence is heated to material pot 6 and constant temperature steel pipe 7, air inlet, it is ensured that coating machine sinks
The product early stage of room 9 etching, the process of transition zone deposition are unaffected；
(4) first throttle valve 1, second throttle 8, by the mobilization of argon gas, the metal that decomposition evaporation is gone out are opened
The metal organic source Cu (tmhd) of copper2Gas is delivered to the doping that diamond-like coating is participated in settling chamber by gas pipeline,
Prepare the metal organic source Cu (tmhd) for being doped with metallic copper2Diamond-like coating；
(5) no longer need to be passed through metal organic source gas in deposition process or occurring emergency needs insantaneous break to have
When machine source doping device and the connection of coating machine settling chamber 9, switching valve is closed, makes coating machine settling chamber 9 closed, metal is had
The mixed gas of machine source gas and argon gas is passed through cooling in returnable bottle, collected, and turns off second throttle 8, when remaining in pipeline
After metal organic source gas in interior and material pot is drained only, the valve of argon bottle 3 and first throttle valve 1 are closed.
Above-described embodiment can be by heating various III-V races, II-VI race's organic compound material, after evaporation thermal decomposition
Organic source gas, which is passed through vacuum drying oven intracavitary, to carry out the mode of ionization and realizes the required element doping of coated film, with temperature control
System, the discharge of miscellaneous gas, the control of organic source flux, charging visualization function；While small volume, can not by organic source state limit
Suitable for solid or liquid, the presoma of low boiling, highly volatile is also applied for；Meet inexpensive light-weight design；This practicality
New Heating is passed through stable gas flow, charging simplicity, without air pollution, while simple and easy to apply, cost is relatively low.
Above-described embodiment of the present utility model is only intended to clearly illustrate the utility model example, and is not
Restriction to embodiment of the present utility model.For those of ordinary skill in the field, on the basis of described above
On can also make other changes in different forms.There is no necessity and possibility to exhaust all the enbodiments.
All any modifications, equivalent substitutions and improvements made within spirit of the present utility model and principle etc., should be included in this reality
Within new scope of the claims.
Claims (5)
1. a kind of metal organic source doper for MOCVD, it is characterised in that including：
Constant-temp. electronic heater；
Material pot, in constant-temp. electronic heater, including cylindrical stainless steel pot and cover plate, be provided with the pot into
Gas interface and outlet interface；
Argon bottle, pressure-reducing valve, first throttle valve, flexible pipe, intake interface are sequentially connected by pipeline；
Constant temperature steel pipe, is connected with thermostat circuit, and the outlet interface is sequentially connected by constant temperature steel pipe, flowmeter, second section
Flow valve, three-way switch valve, coating machine settling chamber；
Returnable bottle, passes through another constant temperature fastener for connection three-way switch valve.
2. the metal organic source doper according to claim 1 for MOCVD, it is characterised in that：Described constant temperature
Steel pipe includes setting in insulating tape, heat insulating asbestos shingle, resistive heater, stainless steel tube, the stainless steel tube from outside to inside successively
Temperature sensor is put, described resistive heater connects temperature controller by circuit.
3. the metal organic source doper according to claim 1 for MOCVD, it is characterised in that：Described cover plate
Centre is provided with quartz glass plate.
4. the metal organic source doper according to claim 1 for MOCVD, it is characterised in that：Described cover plate
Seal washer is provided between pot.
5. the metal organic source doper according to claim 1 for MOCVD, it is characterised in that：The pot bottom
Portion is provided with material holding chamber.
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| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| CN201720175665.5U CN206562453U (en) | 2017-02-27 | 2017-02-27 | A kind of metal organic source doper for MOCVD |
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| Application Number | Priority Date | Filing Date | Title |
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| CN201720175665.5U CN206562453U (en) | 2017-02-27 | 2017-02-27 | A kind of metal organic source doper for MOCVD |
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| CN206562453U true CN206562453U (en) | 2017-10-17 |
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Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106676496A (en) * | 2017-02-27 | 2017-05-17 | 华南理工大学 | Metal organic source doping device and method for MOCVD |
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2017
- 2017-02-27 CN CN201720175665.5U patent/CN206562453U/en active Active
Cited By (1)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| CN106676496A (en) * | 2017-02-27 | 2017-05-17 | 华南理工大学 | Metal organic source doping device and method for MOCVD |
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