KR970051995A - SOI transistor with an insulating layer on part of the channel - Google Patents
SOI transistor with an insulating layer on part of the channel Download PDFInfo
- Publication number
- KR970051995A KR970051995A KR1019950057025A KR19950057025A KR970051995A KR 970051995 A KR970051995 A KR 970051995A KR 1019950057025 A KR1019950057025 A KR 1019950057025A KR 19950057025 A KR19950057025 A KR 19950057025A KR 970051995 A KR970051995 A KR 970051995A
- Authority
- KR
- South Korea
- Prior art keywords
- insulating layer
- soi transistor
- soi
- channel
- transistor
- Prior art date
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- Thin Film Transistor (AREA)
Abstract
채널 일부에 절연층을 형성하여 플로팅 바디 효가(floating body effect)를 제거한 SOI 트랜지스터에 관하여 개시한다. 본 발명은 그 위에 산화막이 형성된 실리콘 기판 상에 제2의 실리콘층 및 게이트 절연막 및 게이트 전극이 있는 SOI(Silicon-On-Insulator) 트랜지스터에 있어서, 상기 산화막 상에 위치하고, 상기 제2의 실리콘층의 일부에 절연층이 형성되어 있는 것을 특징으로 하는 SOI 트랜지스터를 제공한다. 상기 절연층은 상기 SOI 트랜지스터의 채널로 이용되는 상기 게이트 전극의 하부 중간에 형성된다. 또한, 상기 절연층은 그 중앙 윗 부분이 얇도록 타원형으로 형성된다. 본 발명에 의하면, SOI 트랜지스터의 채널 영역 일부에 절연층을 만들어 기생 바이폴라 트랜지스터 형성을 방지함으로써 플로팅 바디 효과를 억제할 수 있다.Disclosed is an SOI transistor in which an insulating layer is formed on a portion of a channel to remove floating body effects. The present invention provides a silicon-on-insulator (SOI) transistor having a second silicon layer, a gate insulating film, and a gate electrode on a silicon substrate on which an oxide film is formed, wherein the second silicon layer is disposed on the oxide film. An SOI transistor comprising an insulating layer formed on a portion thereof is provided. The insulating layer is formed in the lower middle of the gate electrode used as a channel of the SOI transistor. In addition, the insulating layer is formed in an oval shape so that its upper portion is thinner. According to the present invention, the floating body effect can be suppressed by forming an insulating layer in a portion of the channel region of the SOI transistor to prevent parasitic bipolar transistor formation.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도는 본 발명에 의한 SLI 트랜지스터의 단면도이다.1 is a cross-sectional view of an SLI transistor according to the present invention.
Claims (3)
Priority Applications (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950057025A KR970051995A (en) | 1995-12-26 | 1995-12-26 | SOI transistor with an insulating layer on part of the channel |
Applications Claiming Priority (1)
| Application Number | Priority Date | Filing Date | Title |
|---|---|---|---|
| KR1019950057025A KR970051995A (en) | 1995-12-26 | 1995-12-26 | SOI transistor with an insulating layer on part of the channel |
Publications (1)
| Publication Number | Publication Date |
|---|---|
| KR970051995A true KR970051995A (en) | 1997-07-29 |
Family
ID=66618281
Family Applications (1)
| Application Number | Title | Priority Date | Filing Date |
|---|---|---|---|
| KR1019950057025A KR970051995A (en) | 1995-12-26 | 1995-12-26 | SOI transistor with an insulating layer on part of the channel |
Country Status (1)
| Country | Link |
|---|---|
| KR (1) | KR970051995A (en) |
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100373851B1 (en) * | 2001-03-30 | 2003-02-26 | 삼성전자주식회사 | Soi type semiconductor device and method of forming the same |
| KR100835522B1 (en) * | 2006-12-27 | 2008-06-04 | 동부일렉트로닉스 주식회사 | Semiconductor device and method for manufacturing thereof |
-
1995
- 1995-12-26 KR KR1019950057025A patent/KR970051995A/en not_active Application Discontinuation
Cited By (2)
| Publication number | Priority date | Publication date | Assignee | Title |
|---|---|---|---|---|
| KR100373851B1 (en) * | 2001-03-30 | 2003-02-26 | 삼성전자주식회사 | Soi type semiconductor device and method of forming the same |
| KR100835522B1 (en) * | 2006-12-27 | 2008-06-04 | 동부일렉트로닉스 주식회사 | Semiconductor device and method for manufacturing thereof |
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Legal Events
| Date | Code | Title | Description |
|---|---|---|---|
| WITN | Withdrawal due to no request for examination |