KR970051802A - Exhaust Treatment Apparatus and Exhaust Treatment Method of Semiconductor Device Using the Apparatus - Google Patents

Exhaust Treatment Apparatus and Exhaust Treatment Method of Semiconductor Device Using the Apparatus Download PDF

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Publication number
KR970051802A
KR970051802A KR1019950046903A KR19950046903A KR970051802A KR 970051802 A KR970051802 A KR 970051802A KR 1019950046903 A KR1019950046903 A KR 1019950046903A KR 19950046903 A KR19950046903 A KR 19950046903A KR 970051802 A KR970051802 A KR 970051802A
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KR
South Korea
Prior art keywords
exhaust
inflow
exhaust treatment
valve
semiconductor device
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Application number
KR1019950046903A
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Korean (ko)
Inventor
박준식
김덕중
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김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950046903A priority Critical patent/KR970051802A/en
Publication of KR970051802A publication Critical patent/KR970051802A/en

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Abstract

본 발명은 배기물 처리장치 및 이 장치를 이용하는 반도체장치의 배기물 처리방법에 관해 개시한다. 본 발명에 의한 배기물 처리장치는 배기물 발생원에 상기 배기물 발생원에 유입되는 유입물에 따라 자동적으로 해당 유입물의 배기물을 조절할 수 있는 수단을 구비한다. 상기 수단은 상기 배기물 발생원과 병렬로 연결된 복수개의 배기물 조절 밸브와 상기 각 배기물 조절 밸브에 직렬로 연결된 배기 개폐용 밸브를 구비한다. 본 발명에 의한 배기물 처리장치는 배기 개폐용 밸브 구동을 위한 별도의 시스템이 필요하지 않으며, 배기물질 발생원(예컨대, 반응챔버)에 유입되는 물질(가스)의 유입밸브가 설치된 공급라인에 배기 개폐용 밸브가 함께 설치되어 있고, 자동화된 배기물 처리장치의 구성이 간단하고 고나리가 쉬워 매우 경제적이다. 이와 같은 장치를 이용하는 반도체장치의 배기물 처리방법은 배기물의 가변이 용이하고 민감하여 안정적인 공정진행과 품질향상을 기할 수 있다.The present invention relates to an exhaust treatment apparatus and an exhaust treatment method for a semiconductor device using the apparatus. The exhaust treatment apparatus according to the present invention includes means for automatically controlling the exhaust of the inflow of the exhaust in accordance with the inflow of the exhaust inflow source. The means has a plurality of exhaust control valves connected in parallel with the exhaust generating source and an exhaust opening / closing valve connected in series with the respective exhaust control valves. The exhaust treatment apparatus according to the present invention does not require a separate system for driving the valve for opening and closing the exhaust, and opens and closes the exhaust line in a supply line in which an inlet valve for a substance (gas) flowing into an exhaust material generating source (eg, a reaction chamber) is installed. The valve is installed together, and the configuration of the automated exhaust treatment device is simple and easy to handle, which is very economical. The exhaust treatment method of a semiconductor device using such a device is easy and variable in exhaust, so that stable process progress and quality improvement can be achieved.

Description

배기물 처리장치 및 이 장치를 이용하는 반도체 장치의 배기물 처리방법Exhaust Treatment Apparatus and Exhaust Treatment Method of Semiconductor Device Using the Apparatus

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 의한 배기물 처리장치를 나타낸 도면이다.2 is a view showing an exhaust treatment apparatus according to the present invention.

Claims (8)

하나의 배기물 발생원에 하나의 배기물 조절용 밸브를 구비하는 배기물 처리장치에 있어서, 상기 배기물 발생원에는 상기 배기물 발생원에 유입되는 유입물에 따라 자동적으로 해당 유입물의 배기물을 조절할 수 있는 수단을 구비하는 것을 특징으로 하는 배기물 처리장치.An exhaust treatment apparatus comprising an exhaust emission control valve in one exhaust emission source, wherein the exhaust emission source has means for automatically adjusting the exhaust emission of the inflow in accordance with the inflow flowing into the exhaust emission source. Exhaust treatment apparatus comprising a. 제1항에 있어서, 상기 배기물 발생원은 반응 챔버인 것을 특징으로 하는 배기물 처리장치.An exhaust treatment apparatus according to claim 1, wherein the exhaust generation source is a reaction chamber. 제1항에 있어서, 상기 수단은 상기 배기물 발생원에 병렬로 연결된 복수개의 배기물 조절밸브와 상기 각 배기물 조절밸브에 직렬로 연결된 배기 개폐용 밸브를 구비하는 것을 특징으로 하는 배기물 처리장치.2. An exhaust treatment apparatus according to claim 1, wherein said means comprises a plurality of exhaust control valves connected in parallel to said exhaust generating source and an exhaust opening / closing valve connected in series with said exhaust control valve. 제1항에 있어서, 상기 배기물은 가스성 물질인 것을 특징으로 하는 배기물 처리장치.The apparatus of claim 1, wherein the exhaust is a gaseous material. 배기물질 발생원으로부터 배기물질을 배출시키기 위하여 배기물질 발생원에 하나의 배기물 조절용 밸브를 직렬로 연결하는 반도체장치의 배기물 처리방법에 있어서, 상기 배기물 발생원에 유입되는 유입물에 따라 자동적으로 해당 유입물의 배기물을 조절하는 수단을 설치하는 것을 특징으로 하는 반도체 장치의 배기물 처리방법.An exhaust treatment method of a semiconductor device in which one exhaust control valve is connected in series to an exhaust generation source in order to discharge the exhaust material from the exhaust generation source, wherein the inflow is automatically performed according to the inflow flowing into the exhaust generation source. A method for treating exhaust gas of a semiconductor device, comprising means for regulating the exhaust of water. 제5항에 있어서, 상기 수단으로는 상기 배기물 발생원에 병렬로 연결된 복수개의 배기물 조절용 밸브와 상기 각 배기물 조절용 밸브에 직렬로 연결된 배기 개폐용 밸브를 사용하는 것을 특징으로 하는 반도체 장치의 배기물 처리방법.6. The exhaust gas of the semiconductor device according to claim 5, wherein the means uses a plurality of exhaust valves connected in parallel to the exhaust generating source and an exhaust valve for opening and closing connected in series to the respective exhaust control valves. Water treatment method. 제6항에 있어서, 상기 배기 개폐용 밸브는 상기 배기물 발생원에 유입되는 유입물 공급라인과 연결되는 것을 특징으로 하는 반도체장치의 배기물 처리방법.The method of claim 6, wherein the exhaust opening / closing valve is connected to an inflow supply line flowing into the exhaust generation source. 제7항에 있어서, 상기 배기 개폐용 밸브는 상기 유입물 공급라인에 설치된 유입밸브의 동작에 따라 자동적으로 개폐되는 것을 특징으로 하는 반도체 장치의 배기물 처리방법.The method of claim 7, wherein the exhaust opening / closing valve is opened and closed automatically according to the operation of the inlet valve installed in the inflow supply line. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950046903A 1995-12-05 1995-12-05 Exhaust Treatment Apparatus and Exhaust Treatment Method of Semiconductor Device Using the Apparatus KR970051802A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950046903A KR970051802A (en) 1995-12-05 1995-12-05 Exhaust Treatment Apparatus and Exhaust Treatment Method of Semiconductor Device Using the Apparatus

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KR1019950046903A KR970051802A (en) 1995-12-05 1995-12-05 Exhaust Treatment Apparatus and Exhaust Treatment Method of Semiconductor Device Using the Apparatus

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KR970051802A true KR970051802A (en) 1997-07-29

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100434493B1 (en) * 2001-10-05 2004-06-05 삼성전자주식회사 Apparatus for atomic layer deposition and method for operating the same
WO2013134151A1 (en) * 2012-03-09 2013-09-12 Novellus Systems, Inc. Split pumping method, apparatus, and system

Cited By (3)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100434493B1 (en) * 2001-10-05 2004-06-05 삼성전자주식회사 Apparatus for atomic layer deposition and method for operating the same
WO2013134151A1 (en) * 2012-03-09 2013-09-12 Novellus Systems, Inc. Split pumping method, apparatus, and system
US20130237063A1 (en) * 2012-03-09 2013-09-12 Seshasayee Varadarajan Split pumping method, apparatus, and system

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