KR970051442A - Test Mode Sensing Device for Semiconductor Memory Device - Google Patents

Test Mode Sensing Device for Semiconductor Memory Device Download PDF

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Publication number
KR970051442A
KR970051442A KR1019950065961A KR19950065961A KR970051442A KR 970051442 A KR970051442 A KR 970051442A KR 1019950065961 A KR1019950065961 A KR 1019950065961A KR 19950065961 A KR19950065961 A KR 19950065961A KR 970051442 A KR970051442 A KR 970051442A
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KR
South Korea
Prior art keywords
high voltage
memory device
output signal
test mode
semiconductor memory
Prior art date
Application number
KR1019950065961A
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Korean (ko)
Inventor
박찬석
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950065961A priority Critical patent/KR970051442A/en
Publication of KR970051442A publication Critical patent/KR970051442A/en

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  • For Increasing The Reliability Of Semiconductor Memories (AREA)
  • Tests Of Electronic Circuits (AREA)

Abstract

본 발명은 반도체 메모리 장치의 테스트 모드 감지 장치에 관한 것으로, 특히 반도체 테스트 장비상의 제약을 극복하고 누설 전류를 방지하고 고전압 감지 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a test mode sensing device for a semiconductor memory device, and more particularly, to overcomes limitations on semiconductor test equipment, prevents leakage current, and relates to a high voltage sensing device.

본 발명의 목적을 위하여 메모리 소자의 입력 핀을 통해 고전압이 인가되고 인가된 전압이 저항 분배 수단을 통해 출력되어 제1출력 신호를 발생하는 제2출력 신호에 의해 고전압 발생수단에서 발생하는 제1출력 신호를 제어하는 고전압 감지 수단을 포함하는 것을 특징으로 한다.For the purposes of the present invention, a first output is generated in the high voltage generating means by a second output signal in which a high voltage is applied through the input pin of the memory element and the applied voltage is output through the resistor distribution means to generate the first output signal. And high voltage sensing means for controlling the signal.

상술한 바와 같이 본 발명에 의하면 반도체 장치의 테스터 모드의 진입시에 누설전류의 문제를 해결하였고, 또한 어드레스 핀에서부터 연결된 MOS 다이오드 개수도 필요 이상으로 증가시킬 필요가 없는 잇점이 있다.As described above, the present invention solves the problem of leakage current when the semiconductor device enters the tester mode, and does not need to increase the number of MOS diodes connected from the address pin more than necessary.

Description

반도체 메모리 장치의 테스트 모드 감지 장치Test Mode Sensing Device for Semiconductor Memory Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 따른 고전압 감지 장치르 ㄹ보이는 회로도이다.3 is a circuit diagram showing a high voltage sensing device according to the present invention.

Claims (2)

메모리 소자내에 구비되는 테스트 장치의 동작을 제어하는 반도체 메모리 장치에 있어서, 메모리 소자의 입력 핀을 통해 고전압이 인가되고 인가된 전압이 저항 분배 수단을 통해 출력되어 제1출력 신호를 발생하는 고전압 발생 수단; 메모리 소자의 다른 입력핀의 정보에 의해 발생하는 제2출력 신호에 의해 상기 고전압 발생 수단에서 발생하는 제1출력 신호를 제어하는 고전압 감지 수단을 포함하는 것을 특징으로 하는 반도체 메모리 장치의 테스트 모드 감지 장치.A semiconductor memory device for controlling the operation of a test device provided in a memory device, comprising: a high voltage generating means for applying a high voltage through an input pin of a memory element and outputting the applied voltage through a resistance distribution means to generate a first output signal; ; And a high voltage sensing means for controlling a first output signal generated by the high voltage generating means by a second output signal generated by information of another input pin of a memory device. . 제1항에 있어서, 상기 고전압 감지 수단은 메모리 소자의 입력핀 정보에 의해 내부에 해당 정보의 입력을 알리는 신호를 발생하는 수단을 구비하는 것을 특징으로 하는 반도체 메모리 장치의 테스트 모드 감지 장치.The test mode sensing apparatus of claim 1, wherein the high voltage sensing means comprises a means for generating a signal for notifying input of corresponding information therein by input pin information of the memory device. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950065961A 1995-12-29 1995-12-29 Test Mode Sensing Device for Semiconductor Memory Device KR970051442A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950065961A KR970051442A (en) 1995-12-29 1995-12-29 Test Mode Sensing Device for Semiconductor Memory Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950065961A KR970051442A (en) 1995-12-29 1995-12-29 Test Mode Sensing Device for Semiconductor Memory Device

Publications (1)

Publication Number Publication Date
KR970051442A true KR970051442A (en) 1997-07-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950065961A KR970051442A (en) 1995-12-29 1995-12-29 Test Mode Sensing Device for Semiconductor Memory Device

Country Status (1)

Country Link
KR (1) KR970051442A (en)

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