KR970051442A - Test Mode Sensing Device for Semiconductor Memory Device - Google Patents
Test Mode Sensing Device for Semiconductor Memory Device Download PDFInfo
- Publication number
- KR970051442A KR970051442A KR1019950065961A KR19950065961A KR970051442A KR 970051442 A KR970051442 A KR 970051442A KR 1019950065961 A KR1019950065961 A KR 1019950065961A KR 19950065961 A KR19950065961 A KR 19950065961A KR 970051442 A KR970051442 A KR 970051442A
- Authority
- KR
- South Korea
- Prior art keywords
- high voltage
- memory device
- output signal
- test mode
- semiconductor memory
- Prior art date
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- For Increasing The Reliability Of Semiconductor Memories (AREA)
- Tests Of Electronic Circuits (AREA)
Abstract
본 발명은 반도체 메모리 장치의 테스트 모드 감지 장치에 관한 것으로, 특히 반도체 테스트 장비상의 제약을 극복하고 누설 전류를 방지하고 고전압 감지 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a test mode sensing device for a semiconductor memory device, and more particularly, to overcomes limitations on semiconductor test equipment, prevents leakage current, and relates to a high voltage sensing device.
본 발명의 목적을 위하여 메모리 소자의 입력 핀을 통해 고전압이 인가되고 인가된 전압이 저항 분배 수단을 통해 출력되어 제1출력 신호를 발생하는 제2출력 신호에 의해 고전압 발생수단에서 발생하는 제1출력 신호를 제어하는 고전압 감지 수단을 포함하는 것을 특징으로 한다.For the purposes of the present invention, a first output is generated in the high voltage generating means by a second output signal in which a high voltage is applied through the input pin of the memory element and the applied voltage is output through the resistor distribution means to generate the first output signal. And high voltage sensing means for controlling the signal.
상술한 바와 같이 본 발명에 의하면 반도체 장치의 테스터 모드의 진입시에 누설전류의 문제를 해결하였고, 또한 어드레스 핀에서부터 연결된 MOS 다이오드 개수도 필요 이상으로 증가시킬 필요가 없는 잇점이 있다.As described above, the present invention solves the problem of leakage current when the semiconductor device enters the tester mode, and does not need to increase the number of MOS diodes connected from the address pin more than necessary.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제3도는 본 발명에 따른 고전압 감지 장치르 ㄹ보이는 회로도이다.3 is a circuit diagram showing a high voltage sensing device according to the present invention.
Claims (2)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950065961A KR970051442A (en) | 1995-12-29 | 1995-12-29 | Test Mode Sensing Device for Semiconductor Memory Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950065961A KR970051442A (en) | 1995-12-29 | 1995-12-29 | Test Mode Sensing Device for Semiconductor Memory Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970051442A true KR970051442A (en) | 1997-07-29 |
Family
ID=66624281
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950065961A KR970051442A (en) | 1995-12-29 | 1995-12-29 | Test Mode Sensing Device for Semiconductor Memory Device |
Country Status (1)
Country | Link |
---|---|
KR (1) | KR970051442A (en) |
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1995
- 1995-12-29 KR KR1019950065961A patent/KR970051442A/en not_active Application Discontinuation
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Legal Events
Date | Code | Title | Description |
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WITN | Withdrawal due to no request for examination |