KR970051336A - Flash memory device - Google Patents

Flash memory device Download PDF

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Publication number
KR970051336A
KR970051336A KR1019950051288A KR19950051288A KR970051336A KR 970051336 A KR970051336 A KR 970051336A KR 1019950051288 A KR1019950051288 A KR 1019950051288A KR 19950051288 A KR19950051288 A KR 19950051288A KR 970051336 A KR970051336 A KR 970051336A
Authority
KR
South Korea
Prior art keywords
memory device
flash memory
memory cell
cell string
select signal
Prior art date
Application number
KR1019950051288A
Other languages
Korean (ko)
Inventor
심현수
Original Assignee
김주용
현대전자산업 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김주용, 현대전자산업 주식회사 filed Critical 김주용
Priority to KR1019950051288A priority Critical patent/KR970051336A/en
Publication of KR970051336A publication Critical patent/KR970051336A/en

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Abstract

본 발명은 플래쉬 메모리 장치(Flash Memory device)에 관한 것으로서, 낸드구조의 멀티레벨 셀의 프로그램 확인시 선택되는 모메리 셀 스트링의 접지전압을 지역적으로 인접한 바로 다음단의 메모리셀 스트링을 통해 공급되도록 한 플래쉬 메모리 장치에 관한 것이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a flash memory device, wherein a ground voltage of a memory cell string selected during program check of a multilevel cell of a NAND structure is supplied through a memory cell string immediately next to a region adjacent thereto. A flash memory device.

※ 선택도 : 제2도※ Selectivity: 2nd

Description

플래쉬 메모리 장치Flash memory device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 플래쉬 메모리 장치의 회로도,2 is a circuit diagram of a flash memory device according to the present invention;

제3도는 제2도의 메모리셀 스트링의 상세 회로도.3 is a detailed circuit diagram of the memory cell string of FIG.

Claims (2)

플래쉬 메모리 장치에 있어서, 각각의 워드라인을 입력으로 하는 메모리셀들이 직렬로 접속되는 메모리셀 스트링의 어느 한쪽끝은 분할 선택신호에 따라 동작되는 패스 트랜지스터를 통해 비트라인에 각각 접속되고, 상기 메모리셀 스트링의 다른 한쪽끝은 또다른 분할 선택신호에 따라 동작되는 패스 트랜지스터를 통해 지역적으로 인접한 메모리셀 스트링에 접속되며, 상기 지역적으로 인접한 메모리셀 스트링의 다른 한쪽끝은 분할 선택신호에 따라 동작되는 패스 트랜지스터를 통해 또다른 비트라인에 접속되도록 구성되는 것을 특징으로 하는 플래쉬 메모리 장치.In a flash memory device, one end of a memory cell string in which memory cells that input each word line is connected in series is connected to a bit line through a pass transistor operated according to a division select signal, respectively. The other end of the string is connected to a locally adjacent memory cell string via a pass transistor operated according to another split select signal, and the other end of the locally adjacent memory cell string is a pass transistor operated according to a split select signal. Flash memory device, characterized in that configured to be connected to another bit line through. 제1항에 있어서, 상기 다수의 메모리셀 스트링은 다수의 워드라인을 각각 입력으로 하는 다수의 메모리셀들이 직렬로 구성되는 것을 특징으로 하는 플래쉬 메모리 장치.The flash memory device as set forth in claim 1, wherein the plurality of memory cell strings comprise a plurality of memory cells each having a plurality of word lines as inputs. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임※ Note: The disclosure is based on the initial application.
KR1019950051288A 1995-12-18 1995-12-18 Flash memory device KR970051336A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950051288A KR970051336A (en) 1995-12-18 1995-12-18 Flash memory device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950051288A KR970051336A (en) 1995-12-18 1995-12-18 Flash memory device

Publications (1)

Publication Number Publication Date
KR970051336A true KR970051336A (en) 1997-07-29

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950051288A KR970051336A (en) 1995-12-18 1995-12-18 Flash memory device

Country Status (1)

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KR (1) KR970051336A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100413893B1 (en) * 2000-05-26 2004-01-07 인피니언 테크놀로지스 아게 Method for reading electric fuses/antifuses

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100413893B1 (en) * 2000-05-26 2004-01-07 인피니언 테크놀로지스 아게 Method for reading electric fuses/antifuses

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