KR970031137A - Overcurrent Protection Circuit of Power Semiconductor Transistor - Google Patents

Overcurrent Protection Circuit of Power Semiconductor Transistor Download PDF

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Publication number
KR970031137A
KR970031137A KR1019950046629A KR19950046629A KR970031137A KR 970031137 A KR970031137 A KR 970031137A KR 1019950046629 A KR1019950046629 A KR 1019950046629A KR 19950046629 A KR19950046629 A KR 19950046629A KR 970031137 A KR970031137 A KR 970031137A
Authority
KR
South Korea
Prior art keywords
igbt
current
overcurrent protection
protection circuit
power semiconductor
Prior art date
Application number
KR1019950046629A
Other languages
Korean (ko)
Other versions
KR0171711B1 (en
Inventor
이오재
Original Assignee
이형도
삼성전기 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 이형도, 삼성전기 주식회사 filed Critical 이형도
Priority to KR1019950046629A priority Critical patent/KR0171711B1/en
Publication of KR970031137A publication Critical patent/KR970031137A/en
Application granted granted Critical
Publication of KR0171711B1 publication Critical patent/KR0171711B1/en

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Classifications

    • H—ELECTRICITY
    • H03—ELECTRONIC CIRCUITRY
    • H03K—PULSE TECHNIQUE
    • H03K17/00—Electronic switching or gating, i.e. not by contact-making and –breaking
    • H03K17/08—Modifications for protecting switching circuit against overcurrent or overvoltage
    • H03K17/082—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit
    • H03K17/0828—Modifications for protecting switching circuit against overcurrent or overvoltage by feedback from the output to the control circuit in composite switches
    • H—ELECTRICITY
    • H02—GENERATION; CONVERSION OR DISTRIBUTION OF ELECTRIC POWER
    • H02H—EMERGENCY PROTECTIVE CIRCUIT ARRANGEMENTS
    • H02H7/00—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions
    • H02H7/20—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment
    • H02H7/205—Emergency protective circuit arrangements specially adapted for specific types of electric machines or apparatus or for sectionalised protection of cable or line systems, and effecting automatic switching in the event of an undesired change from normal working conditions for electronic equipment for controlled semi-conductors which are not included in a specific circuit arrangement

Landscapes

  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Emergency Protection Circuit Devices (AREA)
  • Power Conversion In General (AREA)

Abstract

이 발명은 일반 IGBT를 이용하여 과전류 보호 기능 및 단락전류 보호 기능을 수행하는 IGBT의 과전류 보호 회로에 관한 것으로서, 종래의 기술에 있어서는 전류 검출용 단자가 있는 특수한 고가의 IGBT를 사용해서 전류 검출용 단자인 에미터에 저항(R1)을 연결하여 과전류 또는 단락전류를 검출하기 때문에 과전류 보호회로의 원가가 상승하게 되는 결점이 있었으나, 이 발명에서는 IGBT의 콜렉터와 에미터 사이의 포화 전압을 이용하여 다이오드(D1)를 통해 IGBT 소자에 흐르는 전류를 검출함으로써 일반 IGBT 소자를 이용해서도 과전류 보호 기능을 수행할 수 있으므로 상기 결점을 개선시킬 수 있는 것이다.The present invention relates to an overcurrent protection circuit of an IGBT that performs overcurrent protection and short-circuit current protection by using a general IGBT. In the related art, a current detection terminal using a special expensive IGBT having a current detection terminal is used. The cost of the overcurrent protection circuit is increased because the resistor R1 is connected to the phosphor emitter to detect an overcurrent or short circuit current. However, in the present invention, a diode (saturation voltage) between the collector and the emitter of the IGBT is used. By detecting the current flowing through the IGBT element through D1), the overcurrent protection function can be performed even by using a general IGBT element, thereby improving the above-mentioned drawback.

Description

전력용 반도체 트랜지스터의 과전류 보호회로Overcurrent Protection Circuit of Power Semiconductor Transistor

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 이 발명에 따른 전력용 반도체 트랜지스터의 과전류 보호회로의 일 실시예를 나타낸 회로도.2 is a circuit diagram showing an embodiment of an overcurrent protection circuit of a power semiconductor transistor according to the present invention.

제3도는 제 2도의 각부를 더욱 상세하게 나타낸 상세 회로도이다.FIG. 3 is a detailed circuit diagram showing each part of FIG. 2 in more detail.

Claims (1)

전류 검출용 단자를 구비하지 않는 전력용 반도체인 IGBT와; 상기 IGBT의 콜렉터로부터 다이오드(D1)를 통해 전류를 인가 받아 과전류를 검출하는 제 1 전류 검출부(50)와; 상기 IGBT의 콜렉터로부터 다이오드(D1)를 통해 전류를 인가받아 단락전류를 검출하는 제 2 전류 검출부(60)와; 상기 제 1, 제 2 전류 검출부(50, 60)중에 어느 하나라도 과전류 또는 단락전류를 검출할 경우 IGBT를 오프시키는 전류 제어부(70)를 포함하여 이루어지는 전력용 반도체 트랜지스터의 과전류 보호회로.An IGBT which is a power semiconductor having no current detecting terminal; A first current detector (50) for detecting an overcurrent by receiving a current from the collector of the IGBT through a diode (D1); A second current detector (60) for detecting a short circuit current by receiving a current from the collector of the IGBT through a diode (D1); And a current controller (70) which turns off the IGBT when any one of the first and second current detectors (50, 60) detects an overcurrent or a short circuit current. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950046629A 1995-11-30 1995-11-30 Overcurrent protection circuit of a power semiconductor transistor KR0171711B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950046629A KR0171711B1 (en) 1995-11-30 1995-11-30 Overcurrent protection circuit of a power semiconductor transistor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950046629A KR0171711B1 (en) 1995-11-30 1995-11-30 Overcurrent protection circuit of a power semiconductor transistor

Publications (2)

Publication Number Publication Date
KR970031137A true KR970031137A (en) 1997-06-26
KR0171711B1 KR0171711B1 (en) 1999-05-01

Family

ID=19437713

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950046629A KR0171711B1 (en) 1995-11-30 1995-11-30 Overcurrent protection circuit of a power semiconductor transistor

Country Status (1)

Country Link
KR (1) KR0171711B1 (en)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100288354B1 (en) * 1999-03-16 2001-04-16 오석재 An apparatus for preventing sudden start
KR100325333B1 (en) * 1997-03-14 2002-07-12 이구택 Contactless contactor having protective circuit

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100949763B1 (en) * 2007-12-14 2010-03-25 현대로템 주식회사 Protect circuit for igbt overcurrent of train

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100325333B1 (en) * 1997-03-14 2002-07-12 이구택 Contactless contactor having protective circuit
KR100288354B1 (en) * 1999-03-16 2001-04-16 오석재 An apparatus for preventing sudden start

Also Published As

Publication number Publication date
KR0171711B1 (en) 1999-05-01

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