KR970030867A - Charge Coupled Solid State Imaging Device - Google Patents
Charge Coupled Solid State Imaging Device Download PDFInfo
- Publication number
- KR970030867A KR970030867A KR1019950042633A KR19950042633A KR970030867A KR 970030867 A KR970030867 A KR 970030867A KR 1019950042633 A KR1019950042633 A KR 1019950042633A KR 19950042633 A KR19950042633 A KR 19950042633A KR 970030867 A KR970030867 A KR 970030867A
- Authority
- KR
- South Korea
- Prior art keywords
- ground voltage
- voltage
- imaging device
- state imaging
- solid state
- Prior art date
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- Solid State Image Pick-Up Elements (AREA)
- Transforming Light Signals Into Electric Signals (AREA)
Abstract
고체촬상 소자에 관해 기재하고 있다. 광 입력부, 전송부 및 출력부로 구성된 인터라인 전하결합소자(IT-CCD)형 고체촬상소자에 있어서, 접지 전압과 상기 접지 전압보다 낮은 전압을 화소가 형성되는 웰 부위에 선택적으로 인가하는 수단을 구비하여 상기 광 입력부의 광 다이오드 내에 신호전하가 잔류되는 잔상현상을 억제하는 것을 특징으로 하는 고체촬상소자가 제공된다. 따라서, 읽어내기 동작을 더 강하게 해서, 광 다이오드에 신호전하가 남은 현상, 즉 잔상 현상을 충분히 억제할 수 있다.It describes a solid state imaging device. 1. An interline charge-coupled device (IT-CCD) type solid-state imaging device comprising an optical input unit, a transmission unit, and an output unit, comprising: a means for selectively applying a ground voltage and a voltage lower than the ground voltage to a well portion where a pixel is formed; Thus, a solid-state imaging device is provided, which suppresses afterimages in which signal charge remains in the photodiode of the light input unit. Therefore, the read operation can be made stronger to sufficiently suppress the phenomenon in which signal charge remains in the photodiode, that is, the afterimage phenomenon.
Description
본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.
제1도는 본 발명의 일 실시예에 따라 전압인가 방법을 설명하기 위해 도시한 도면.1 is a diagram for explaining a voltage application method according to an embodiment of the present invention.
Claims (5)
Priority Applications (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950042633A KR970030867A (en) | 1995-11-21 | 1995-11-21 | Charge Coupled Solid State Imaging Device |
Applications Claiming Priority (1)
Application Number | Priority Date | Filing Date | Title |
---|---|---|---|
KR1019950042633A KR970030867A (en) | 1995-11-21 | 1995-11-21 | Charge Coupled Solid State Imaging Device |
Publications (1)
Publication Number | Publication Date |
---|---|
KR970030867A true KR970030867A (en) | 1997-06-26 |
Family
ID=66587941
Family Applications (1)
Application Number | Title | Priority Date | Filing Date |
---|---|---|---|
KR1019950042633A KR970030867A (en) | 1995-11-21 | 1995-11-21 | Charge Coupled Solid State Imaging Device |
Country Status (1)
Country | Link |
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KR (1) | KR970030867A (en) |
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100377599B1 (en) * | 2000-02-22 | 2003-03-29 | 이노텍 가부시기가이샤 | Method of storing optically generated charges by optical signal in solid state imaging device |
-
1995
- 1995-11-21 KR KR1019950042633A patent/KR970030867A/en not_active Application Discontinuation
Cited By (1)
Publication number | Priority date | Publication date | Assignee | Title |
---|---|---|---|---|
KR100377599B1 (en) * | 2000-02-22 | 2003-03-29 | 이노텍 가부시기가이샤 | Method of storing optically generated charges by optical signal in solid state imaging device |
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