KR970030867A - Charge Coupled Solid State Imaging Device - Google Patents

Charge Coupled Solid State Imaging Device Download PDF

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Publication number
KR970030867A
KR970030867A KR1019950042633A KR19950042633A KR970030867A KR 970030867 A KR970030867 A KR 970030867A KR 1019950042633 A KR1019950042633 A KR 1019950042633A KR 19950042633 A KR19950042633 A KR 19950042633A KR 970030867 A KR970030867 A KR 970030867A
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KR
South Korea
Prior art keywords
ground voltage
voltage
imaging device
state imaging
solid state
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Application number
KR1019950042633A
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Korean (ko)
Inventor
박상식
Original Assignee
김광호
삼성전자 주식회사
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Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950042633A priority Critical patent/KR970030867A/en
Publication of KR970030867A publication Critical patent/KR970030867A/en

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  • Solid State Image Pick-Up Elements (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)

Abstract

고체촬상 소자에 관해 기재하고 있다. 광 입력부, 전송부 및 출력부로 구성된 인터라인 전하결합소자(IT-CCD)형 고체촬상소자에 있어서, 접지 전압과 상기 접지 전압보다 낮은 전압을 화소가 형성되는 웰 부위에 선택적으로 인가하는 수단을 구비하여 상기 광 입력부의 광 다이오드 내에 신호전하가 잔류되는 잔상현상을 억제하는 것을 특징으로 하는 고체촬상소자가 제공된다. 따라서, 읽어내기 동작을 더 강하게 해서, 광 다이오드에 신호전하가 남은 현상, 즉 잔상 현상을 충분히 억제할 수 있다.It describes a solid state imaging device. 1. An interline charge-coupled device (IT-CCD) type solid-state imaging device comprising an optical input unit, a transmission unit, and an output unit, comprising: a means for selectively applying a ground voltage and a voltage lower than the ground voltage to a well portion where a pixel is formed; Thus, a solid-state imaging device is provided, which suppresses afterimages in which signal charge remains in the photodiode of the light input unit. Therefore, the read operation can be made stronger to sufficiently suppress the phenomenon in which signal charge remains in the photodiode, that is, the afterimage phenomenon.

Description

전하결합소자형 고체촬상소자Charge Coupled Solid State Imaging Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 일 실시예에 따라 전압인가 방법을 설명하기 위해 도시한 도면.1 is a diagram for explaining a voltage application method according to an embodiment of the present invention.

Claims (5)

광 입력부, 전송부 및 출력부로 구성된 인터라인 전하결합소자(IT-CCD)형 고체촬상소자에 있어서, 접지 전압과 상기 접지 전압보다 낮은 전압을 화소가 형성되는 웰 부위에 선택적으로 인가하는 수단을 구비하여 상기 광 입력부의 광 다이오드 내에 신호전하가 잔류되는 잔상현상을 억제하는 것을 특징으로 하는 고체촬상소자.1. An interline charge-coupled device (IT-CCD) type solid-state imaging device comprising an optical input unit, a transmission unit, and an output unit, comprising: a means for selectively applying a ground voltage and a voltage lower than the ground voltage to a well portion where a pixel is formed; To suppress afterimages in which signal charge remains in the photodiode of the optical input unit. 제1항에 있어서, 상기 접지전압은 상기 웰 부위와 접지 전압 사이에 P형 모스 트랜지스터를 형성하여 인가하며, 상기 접지 전압보다 낮은 전압은 상기 웰 부위와 접지전압보다 낮은 전압원 사이에 N형 모스 트랜지스터를 형성하여 인가하는 것을 특징으로 하는 고체촬상소자.The MOS transistor of claim 1, wherein the ground voltage is formed by applying a P-type MOS transistor between the well portion and the ground voltage, and a voltage lower than the ground voltage is formed between the well portion and a voltage source lower than the ground voltage. Solid-state imaging device, characterized in that for applying. 제2항에 있어서, 상기 P형 및 N형 모스 트랜지스터의 게이트에 수직 전송신호가 인가되는 것을 특징으로 하는 고체촬상소자.The solid state image pickup device according to claim 2, wherein a vertical transfer signal is applied to gates of the P-type and N-type MOS transistors. 제2항에 있어서, 상기 N형 및 P형 모스 트랜지스터의 문턱 전압이 수직전송 신호의 수직전송 '하이' 레벨과, 읽어내기 신호 레벨 사이에 있도록 조절되는 것을 특징으로 하는 고체촬상소자.3. The solid state image pickup device of claim 2, wherein the threshold voltages of the N-type and P-type MOS transistors are adjusted to be between the vertical transfer 'high' level of the vertical transfer signal and the read signal level. 제1항에 있어서, 상기 접지 전압보다 낮은 전압의 전원으로서 수직 전송 게이트 전압 입력부의 보호 회로용 웰 전압을 이용하는 것을 특징으로 하는 고체촬상소자.The solid state image pickup device according to claim 1, wherein the protection circuit well voltage is used as a power supply having a voltage lower than the ground voltage. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950042633A 1995-11-21 1995-11-21 Charge Coupled Solid State Imaging Device KR970030867A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950042633A KR970030867A (en) 1995-11-21 1995-11-21 Charge Coupled Solid State Imaging Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950042633A KR970030867A (en) 1995-11-21 1995-11-21 Charge Coupled Solid State Imaging Device

Publications (1)

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KR970030867A true KR970030867A (en) 1997-06-26

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KR1019950042633A KR970030867A (en) 1995-11-21 1995-11-21 Charge Coupled Solid State Imaging Device

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100377599B1 (en) * 2000-02-22 2003-03-29 이노텍 가부시기가이샤 Method of storing optically generated charges by optical signal in solid state imaging device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100377599B1 (en) * 2000-02-22 2003-03-29 이노텍 가부시기가이샤 Method of storing optically generated charges by optical signal in solid state imaging device

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