KR970030820A

KR970030820A - Wiring layer formation method of a semiconductor device

Info

Publication number: KR970030820A
Application number: KR1019950040738A
Authority: KR
Inventors: 이권재
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1995-11-10
Filing date: 1995-11-10
Publication date: 1997-06-26

Abstract

반도체 장치에 있어서 이중층 구조의 도전막으로 구성된 배선층의 형성방법이 개시되었다. 본 발명은 질소가 주입된 다결정 실리콘막을 도펀트가 주입된 다결정 실리콘막의 상부 또는 하부에 형성한 이중층 구조이 도전막으로 구성된 배선층의 형성방법을 제공한다. 본 발명에 의하여 후속 열처리 공정에 의하여 도펀트가 주입된 다결정 실리콘막 내의 도펀트가 밖으로 확산하는 것을 방지하여 전기적 특성을 향상시켰다.A method of forming a wiring layer composed of a conductive film of a double layer structure in a semiconductor device has been disclosed. The present invention provides a method for forming a wiring layer in which a double layer structure in which a polycrystalline silicon film into which a nitrogen is injected is formed on or under a polycrystalline silicon film into which a dopant is injected is formed of a conductive film. According to the present invention, the dopant in the polycrystalline silicon film into which the dopant is implanted is prevented from diffusing out by a subsequent heat treatment process, thereby improving electrical characteristics.

Description

Wiring layer formation method of a semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 종래의 배선층 형성방법을 설명하기 위한 단면도이다.1 is a cross-sectional view for explaining a conventional wiring layer forming method.

Claims

Semiconductor substrates; Forming an insulating film on the semiconductor substrate; Forming an insulating film pattern having a contact hole exposing a predetermined region of the semiconductor substrate, and forming a first polycrystalline silicon film deposited on the entire surface of the resultant and implanted with nitrogen in contact with the semiconductor substrate through the contact hole; ; And forming a second polycrystalline silicon film implanted with a dopant on the first polycrystalline silicon film.

Semiconductor substrates; Forming a first insulating film on the semiconductor substrate; Forming a conductive film on the first insulating film; Forming a second insulating film on the conductive film; Forming a second insulating film pattern having a contact hole exposing a predetermined region of the conductive film; Forming a first polycrystalline silicon film deposited on the entire surface of the resultant and implanted with nitrogen contacting the conductive film through the contact hole; And forming a second polycrystalline silicon film implanted with a dopant on the first polycrystalline silicon film.

Semiconductor substrates; Forming a first insulating film on the semiconductor substrate; Forming a first polycrystalline silicon film implanted with a dopant on the first insulating film; Forming a second polycrystalline silicon film implanted with nitrogen on the first polycrystalline silicon film; Forming a second insulating film on the second polycrystalline silicon film; Forming an insulating film pattern composed of a second insulating film having a contact hole exposing a predetermined region of the second polycrystalline silicon film; And forming a conductive film deposited on the entire surface of the resultant material and in contact with the second polycrystalline silicon film through the contact hole.

※ Note: The disclosure is based on the initial application.