KR970030410A

KR970030410A - Cleaning apparatus and method of a semiconductor device

Info

Publication number: KR970030410A
Application number: KR1019950039209A
Authority: KR
Inventors: 유정식; 김창욱; 우용진; 조영민
Original assignee: 김광호; 삼성전자 주식회사
Priority date: 1995-11-01
Filing date: 1995-11-01
Publication date: 1997-06-26

Abstract

본 발명은 반도체 장치의 제조 공정중 포토리소그라피 공정에서 웨이퍼의 표면에 폴리머의 형태로 잔류하게 되는 현상액의 잔류물을 제거하는 방법 및 그 세정장치에 관한 것으로, 웨이퍼의 표면에 잔류하는 폴리머 형태의 현상액을 제거하기 위한 혼합용액을 약품조에 담고, 상기 웨이퍼를 혼합용액 내에 넣는 공정과; 상기 약품조 내로 고주파를 전달시켜 상기 약품조를 진동시키는 공정과; 상기 약품조에 물을 공급하여 현상액이 제거된 상기 웨이퍼의 표면의 혼합용액 잔류물을 씻어내는 공정과; 혼합용액의 잔류물을 씻어낸 상기 웨이퍼를 건조기에 넣고 고속회전시켜 건조시키는 공정을 포함한다. 또한 본 발명은 웨이퍼 표면의 현상액의 잔류물을 제거하기 의한 혼합용액을 담고 있는 약품조와; 상기 약품조의 하부에 설치되어 고주파에 의한 진동을 약품조 내로 전달시키는 역할을 맡는 진동판과; 고수파를 발생시켜 상기 진동판을 진동시키는 발진기를 포함하고 있다. 이와 같은 방법과 구조에 의하면, 종래 공정에 있어서, 약품조에서 제거되지 않고 표면에 잔존하는 폴리머 형태의 경화된 현상액 잔류물은 고주파를 발생시키는 발진기와 상기 발진기에서 발생한 고주파에 의해 진동을 일으켜 상기 약품조에 물리적인 힘을 전달시켜 주는 진동판이 부착된 약품조를 사용함으로써 쉽게 제거할 수 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention [0001] The present invention relates to a method for removing residues of a developer remaining in the form of a polymer on the surface of a wafer in a photolithography process during a manufacturing process of a semiconductor device, and to a cleaning apparatus thereof. Placing a mixed solution in a chemical bath to remove the wafer and placing the wafer into the mixed solution; Vibrating the medicine tank by transmitting a high frequency into the medicine tank; Supplying water to the chemical bath to wash away the mixed solution residue on the surface of the wafer from which the developer is removed; The process of drying the said wafer which wash | cleaned the residue of the mixed solution in a dryer, and rotating by high speed. The present invention also provides a chemical bath containing a mixed solution for removing the residue of the developer on the wafer surface; A diaphragm installed at a lower portion of the chemical tank to serve to transmit vibrations due to high frequency into the chemical tank; It includes an oscillator for generating a high frequency to vibrate the diaphragm. According to this method and structure, in the conventional process, the cured developer residue in the form of polymer which is not removed from the chemical bath and remains on the surface vibrates by the oscillator generating high frequency and the high frequency generated by the oscillator. It can be easily removed by using a chemical tank with a diaphragm to transfer the physical force to the tank.

Description

Cleaning apparatus and method of a semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1a도 내지 제1c도는 종래 반도체 장치의 현상액 세정 방법을 보여주는 공정도.1A to 1C are process charts showing a developer cleaning method of a conventional semiconductor device.

제2도는 본 발명의 실시예에 따른 반도체 장치의 현상액의 세정 방법 및 그 장치의 구성을 보여주는 도면.2 is a view showing a cleaning method of a developer of a semiconductor device according to an embodiment of the present invention, and a configuration of the device.

Claims

A cleaning apparatus for a semiconductor device, comprising: a chemical bath (10) containing a mixed solution (12) for removing residues of a developing solution on a surface of a wafer (14); An oscillator 24 for generating a high frequency wave; And a diaphragm (22) disposed below the chemical bath (10) to transmit vibrations at high frequency to the wafer (14) in the chemical bath (10).

The diaphragm 22 is installed at a predetermined distance within a range in which the vibration 20 by the high frequency can reach the wafer 14 in the chemical bath 10. The cleaning apparatus of a semiconductor device.

CLAIMS 1. A method for cleaning a semiconductor device, comprising: placing a wafer (14) in which a developer residue in polymer form on a surface thereof is placed in a chemical bath (10) containing a mixed solution (12); And transmitting the vibration by the high frequency into the chemical bath (10) to vibrate the chemical bath (10).

4. The apparatus of claim 3, wherein said high frequency is used in the range of about 950 KHz to 1.5 MHz.

4. The apparatus of claim 3, wherein the high frequency wave uses a low frequency of about 50 KHz.