KR970030207A - Wafer coating method - Google Patents

Wafer coating method Download PDF

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Publication number
KR970030207A
KR970030207A KR1019950040050A KR19950040050A KR970030207A KR 970030207 A KR970030207 A KR 970030207A KR 1019950040050 A KR1019950040050 A KR 1019950040050A KR 19950040050 A KR19950040050 A KR 19950040050A KR 970030207 A KR970030207 A KR 970030207A
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KR
South Korea
Prior art keywords
wafer
flattening
reflowing
cup
rotating
Prior art date
Application number
KR1019950040050A
Other languages
Korean (ko)
Other versions
KR0167263B1 (en
Inventor
홍영준
Original Assignee
문정환
엘지반도체 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 문정환, 엘지반도체 주식회사 filed Critical 문정환
Priority to KR1019950040050A priority Critical patent/KR0167263B1/en
Publication of KR970030207A publication Critical patent/KR970030207A/en
Application granted granted Critical
Publication of KR0167263B1 publication Critical patent/KR0167263B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/02—Manufacture or treatment of semiconductor devices or of parts thereof
    • H01L21/02104—Forming layers
    • H01L21/02107—Forming insulating materials on a substrate
    • H01L21/02225—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer
    • H01L21/0226—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process
    • H01L21/02282—Forming insulating materials on a substrate characterised by the process for the formation of the insulating layer formation by a deposition process liquid deposition, e.g. spin-coating, sol-gel techniques, spray coating
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01L—SEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L21/00—Processes or apparatus adapted for the manufacture or treatment of semiconductor or solid state devices or of parts thereof
    • H01L21/67—Apparatus specially adapted for handling semiconductor or electric solid state devices during manufacture or treatment thereof; Apparatus specially adapted for handling wafers during manufacture or treatment of semiconductor or electric solid state devices or components ; Apparatus not specifically provided for elsewhere
    • H01L21/67005—Apparatus not specifically provided for elsewhere
    • H01L21/67011—Apparatus for manufacture or treatment
    • H01L21/6715—Apparatus for applying a liquid, a resin, an ink or the like

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  • Engineering & Computer Science (AREA)
  • Physics & Mathematics (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Manufacturing & Machinery (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Power Engineering (AREA)
  • Internal Circuitry In Semiconductor Integrated Circuit Devices (AREA)

Abstract

본 발명은 웨이퍼 코팅방법에 관한 것으로, 종래에는 DLM(DOUBLE LEVEL METALLIZATION)을 채택한 디램 디바이스(DRAM DEVICE)에서는 큰 문제가 없으나, TLM(TRIPLE LEVEL METALLIZATION)을 채택하고 있는 0.6㎛급 이하 ASIC 또는 16M DRAM급 이상의 디바이스에서는 만족할 만한 평탄화를 이루어 내고 있지 못하며, 이로 인하여 특히 에치 백(ETCH BACK)공정을 적용해야만 하는 유기 에스오지 용액을 사용시에 평탄화를 이루기는 더욱 어려운 문제점이 있었던 바, 본 발명은 에스오지 도포 공정 이후에 컵에 에탄올을 공급하고 일정시간 유지시켜 주는 솔벤트 분위기 형성공정과 웨이퍼(W)를 역회전 시켜서 1차 형성되어 있는 코팅막을 리플로우하는 리플로우 공정을 실시하여 코팅막의 평탄화를 향상시키는 효과가 있다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a wafer coating method. Conventionally, there is no big problem in a DRAM device employing DLM (DOUBLE LEVEL METALLIZATION), but an ASIC or 16M DRAM of 0.6 µm or less that adopts a triple level metering (TLM) is used. In the above-mentioned devices, satisfactory flattening is not achieved, and thus, the flattening is more difficult to achieve flattening when using an organic SOH solution, which requires the application of an ETCH BACK process. After the coating process, a solvent atmosphere forming process for supplying ethanol to the cup and maintaining it for a predetermined time and a reflow process for reflowing the coating film formed by first rotating the wafer W to improve the planarization of the coating film It works.

Description

웨이퍼 코팅방법Wafer coating method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명에 의한 코팅공정을 보인 공정 진행표.3 is a process progress table showing the coating process according to the present invention.

Claims (2)

웨이퍼가 회전하지 않는 상태에서 에스오지 용액을 웨이퍼의 상면에 분산시키는 에스오지 분산공정과, 상기와 같이 웨이퍼의 상면에 분산된 에스오지 용액을 정회전시켜 도포하는 에스오지 도포 공정과, 컵에 에탄올을 공급하고 배출시키지 않은 상태에서 소정시간 유지시켜 컵의 내부를 솔벤트 분위기로 형성하는 솔벤트 분위기 형성공정과, 웨이퍼를 역회전시켜서 1차형성되어 있는 에스오지 막을 리플로우되게하여 평탄화를 개선하는 리플로우 공정과, 에탄올을 이용하여 웨이퍼의 뒷면과 에지 부분을 린스하는 린스 공정 및 웨이퍼를 고속회전시켜서 건조시키는 웨이퍼 드라이 공정의 순서로 진행되는 것을 특징으로 하는 웨이퍼 코팅방법.Swoji dispersion process for dispersing the Eoji solution on the upper surface of the wafer in the state that the wafer does not rotate, Swoji coating process for applying the Eoji solution dispersed on the upper surface of the wafer by forward rotation and ethanol in the cup Solvent atmosphere formation process to maintain the inside of the cup in a solvent atmosphere by maintaining a predetermined time without supplying and discharging the gas, and reflowing to improve planarization by reflowing the primary formed Suji film by rotating the wafer in reverse. And a rinsing step of rinsing the back and edge portions of the wafer using ethanol and a wafer drying step of drying the wafer by rotating the wafer at a high speed. 제1항에 있어서, 상기 리플로우 공정시 웨이퍼의 역회전은 3,000rpm으로 20초 동안 실시하는 것을 특징으로 하는 웨이퍼 코팅방법.The method of claim 1, wherein the reverse rotation of the wafer during the reflow process is performed at 3,000 rpm for 20 seconds.
KR1019950040050A 1995-11-07 1995-11-07 Wafer coating method KR0167263B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950040050A KR0167263B1 (en) 1995-11-07 1995-11-07 Wafer coating method

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950040050A KR0167263B1 (en) 1995-11-07 1995-11-07 Wafer coating method

Publications (2)

Publication Number Publication Date
KR970030207A true KR970030207A (en) 1997-06-26
KR0167263B1 KR0167263B1 (en) 1999-02-01

Family

ID=19433213

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950040050A KR0167263B1 (en) 1995-11-07 1995-11-07 Wafer coating method

Country Status (1)

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KR (1) KR0167263B1 (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100365042B1 (en) * 1998-11-30 2002-12-16 다이닛뽕스크린 세이조오 가부시키가이샤 Coating solution applying method and apparatus

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100365042B1 (en) * 1998-11-30 2002-12-16 다이닛뽕스크린 세이조오 가부시키가이샤 Coating solution applying method and apparatus

Also Published As

Publication number Publication date
KR0167263B1 (en) 1999-02-01

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