KR970029867A - NAND Nonvolatile Memory Devices - Google Patents

NAND Nonvolatile Memory Devices Download PDF

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Publication number
KR970029867A
KR970029867A KR1019950040257A KR19950040257A KR970029867A KR 970029867 A KR970029867 A KR 970029867A KR 1019950040257 A KR1019950040257 A KR 1019950040257A KR 19950040257 A KR19950040257 A KR 19950040257A KR 970029867 A KR970029867 A KR 970029867A
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KR
South Korea
Prior art keywords
select transistor
nonvolatile memory
ground
memory device
nand type
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KR1019950040257A
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Korean (ko)
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KR0170700B1 (en
Inventor
김동준
최정달
신왕철
Original Assignee
김광호
삼성전자 주식회사
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Priority to KR1019950040257A priority Critical patent/KR0170700B1/en
Publication of KR970029867A publication Critical patent/KR970029867A/en
Application granted granted Critical
Publication of KR0170700B1 publication Critical patent/KR0170700B1/en

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    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C16/00—Erasable programmable read-only memories
    • G11C16/02—Erasable programmable read-only memories electrically programmable
    • G11C16/04—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS
    • G11C16/0483—Erasable programmable read-only memories electrically programmable using variable threshold transistors, e.g. FAMOS comprising cells having several storage transistors connected in series
    • G—PHYSICS
    • G11—INFORMATION STORAGE
    • G11C—STATIC STORES
    • G11C29/00—Checking stores for correct operation ; Subsequent repair; Testing stores during standby or offline operation
    • G11C29/70—Masking faults in memories by using spares or by reconfiguring

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  • Engineering & Computer Science (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Semiconductor Memories (AREA)
  • Read Only Memory (AREA)

Abstract

셀 어레이(Cell Array)의 구조가 낸드(NAND)형으로 구성된 불휘발성 메모리 장치에서, 셀 스트링 잔류산포를 최소화한 낸드형 불휘발성 메모리 셀이 개시된다. 본 발명은 접지 선택 트랜지스터의 폭과 길이를 적절히 조절하여, 다시 말해 전비 선택 트랜지스터의 잔류 구동력을 각각의 메모리 셀의 상태에 따라 접지 선택 트랜지스터의 드레인 영역의 전류가 최소로 되는 때의 전류와 같거나 이보다는 조금 높게 조절함으로써, 스트링 전류를 저하시키지 않으면서 셀 전류의 분포를 균일하게 할 수 있다. 그 결과, 데이터의 오동작을 줄이고 데이터의 센싱 시간을 감소시켜 소자의 성능을 향상시키는 효과를 발휘한다.In a nonvolatile memory device having a cell array structure of a NAND type, a NAND type nonvolatile memory cell in which cell string residual dispersion is minimized is disclosed. The present invention adjusts the width and the length of the ground select transistor appropriately, that is, the residual driving force of the power select transistor is equal to the current when the current in the drain region of the ground select transistor is minimized according to the state of each memory cell. By adjusting a little higher than this, the distribution of cell current can be made uniform without reducing string current. As a result, it is possible to reduce the malfunction of the data and to reduce the sensing time of the data, thereby improving the performance of the device.

Description

낸드형 비휘발성 메모리 장치NAND Nonvolatile Memory Devices

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제3도는 본 발명의 일실시예에 의한 NAND형 메모리 셀의 평면도이다.3 is a plan view of a NAND type memory cell according to an embodiment of the present invention.

제4도는 본 발명의 다른 실시예에 의한 NAND형 메모리 셀의 평면도이다.4 is a plan view of a NAND memory cell according to another embodiment of the present invention.

Claims (6)

특정 셀을 선택하기 위한 복수 개의 스트링 선택 트랜지스터들, 데이터 기억을 위한 복수 개의 메모리 셀 트랜지스터들 및 대기상태시의 불량(fail) 구제를 위한 접지 선택(Ground Selection) 트랜지스터들이 비트라인과 접지전압단 사이에 서로 직렬회로로 구성되고, 상기 접지 선택 트랜지스터의 폭이 상기 스트링 선택 트랜지스터의 폭보다 더 좁은 폭을 갖도록 구성되는 것을 특징으로 하는 낸드(NAND)형 비휘발성 메모리 장치.A plurality of string select transistors for selecting a specific cell, a plurality of memory cell transistors for data storage, and ground selection transistors for fail relief in standby state are provided between the bit line and the ground voltage terminal. NAND type nonvolatile memory device, comprising: a series circuit in series with each other, the width of the ground select transistor being narrower than the width of the string select transistor. 제1항에 있어서, 상기 접지 선택 트랜지스터의 폭이 상기 스트링 선택 트랜지스터의 폭보다 대략 0.1-0.2㎛ 정도 작음을 특징으로 하는 낸드형 비휘발성 메모리 장치.The NAND type nonvolatile memory device of claim 1, wherein the width of the ground select transistor is about 0.1 μm to about 0.2 μm smaller than the width of the string select transistor. 제1항에 있어서, 상기 접지 선택 트랜지스터의 전류 구동력이 상기 스트링 선택 트랜지스터의 전류 구동력 보다 작음을 특징으로 하는 낸드형 비휘발성 메모리 장치.The NAND type nonvolatile memory device of claim 1, wherein a current driving force of the ground select transistor is smaller than a current driving force of the string select transistor. 특정 셀을 선택하기 위한 복수 개의 스트링 선택 트랜지스터들, 데이터 기억을 위한 복수 개의 메모리 셀 트랜지스터들 및 대기상태시의 불량(fail) 구제를 위한 접지 선택(Ground Selection) 트랜지스터들이 비트라인과 접지전압단 사이에 서로 직렬회로로 구성되고, 상기 접지 선택 트랜지스터의 게이트 길이(Length)가 상기 스트링 선택 트랜지스터의 게이트 길이보다 더 길게 구성되는 것을 특징으로 하는 낸드형 비휘발성 메모리 장치.A plurality of string select transistors for selecting a specific cell, a plurality of memory cell transistors for data storage, and ground selection transistors for fail relief in standby state are provided between the bit line and the ground voltage terminal. The NAND type nonvolatile memory device of claim 1, wherein the gate select length of the ground select transistor is longer than the gate length of the string select transistor. 제4항에 있어서, 상기 접지 선택 트랜지스터의 게이트 길이가 상기 스트링 선택 트랜지스터의 게이트 길이보다 약 0.1-0.2㎛ 정도 긴 것을 특징으로 하는 비휘발성 메모리 장치.The nonvolatile memory device of claim 4, wherein the gate length of the ground select transistor is about 0.1-0.2 μm longer than the gate length of the string select transistor. 제4항에 있어서, 상기 접지 선택 트랜지스터의 전류 구동력이 스트링 선택 트랜지스터의 전류 구동력 보다 작음을 특징으로 하는 비휘발성 메모리 장치.The nonvolatile memory device of claim 4, wherein a current driving force of the ground select transistor is smaller than a current driving force of a string select transistor.
KR1019950040257A 1995-11-08 1995-11-08 Nand-type non-volatile memory device KR0170700B1 (en)

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KR1019950040257A KR0170700B1 (en) 1995-11-08 1995-11-08 Nand-type non-volatile memory device

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Application Number Priority Date Filing Date Title
KR1019950040257A KR0170700B1 (en) 1995-11-08 1995-11-08 Nand-type non-volatile memory device

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KR970029867A true KR970029867A (en) 1997-06-26
KR0170700B1 KR0170700B1 (en) 1999-03-30

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100894788B1 (en) * 2007-11-30 2009-04-24 주식회사 하이닉스반도체 Programming method and erasing method of non volatile memory device

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100894788B1 (en) * 2007-11-30 2009-04-24 주식회사 하이닉스반도체 Programming method and erasing method of non volatile memory device

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