KR970025296A - Planar High Frequency Inductively Coupled Plasma Treatment System - Google Patents

Planar High Frequency Inductively Coupled Plasma Treatment System Download PDF

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Publication number
KR970025296A
KR970025296A KR1019950035711A KR19950035711A KR970025296A KR 970025296 A KR970025296 A KR 970025296A KR 1019950035711 A KR1019950035711 A KR 1019950035711A KR 19950035711 A KR19950035711 A KR 19950035711A KR 970025296 A KR970025296 A KR 970025296A
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KR
South Korea
Prior art keywords
antenna
magnetic field
high frequency
chamber
deposition
Prior art date
Application number
KR1019950035711A
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Korean (ko)
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KR0178847B1 (en
Inventor
황기웅
이호준
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황기웅
이호준
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Publication date
Application filed by 황기웅, 이호준 filed Critical 황기웅
Priority to KR1019950035711A priority Critical patent/KR0178847B1/en
Publication of KR970025296A publication Critical patent/KR970025296A/en
Application granted granted Critical
Publication of KR0178847B1 publication Critical patent/KR0178847B1/en

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Classifications

    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32431—Constructional details of the reactor
    • H01J37/3266—Magnetic control means
    • H—ELECTRICITY
    • H01—ELECTRIC ELEMENTS
    • H01J—ELECTRIC DISCHARGE TUBES OR DISCHARGE LAMPS
    • H01J37/00—Discharge tubes with provision for introducing objects or material to be exposed to the discharge, e.g. for the purpose of examination or processing thereof
    • H01J37/32—Gas-filled discharge tubes
    • H01J37/32009—Arrangements for generation of plasma specially adapted for examination or treatment of objects, e.g. plasma sources
    • H01J37/32082—Radio frequency generated discharge
    • H01J37/321—Radio frequency generated discharge the radio frequency energy being inductively coupled to the plasma
    • H01J37/3211—Antennas, e.g. particular shapes of coils

Abstract

본 발명은 유도기전력이 처리용 챔버내로 깊숙이 침투하지 못함에 따라 균일한 대면적의 플라즈마를 고밀도로 발생시킬 수 없는 플라즈마 처리장치의 결점을 해소하기 위한 것으로서, 나선형으로 수회 감겨진 평면형 안테나(11), 안테나(11)에 전력을 인가하는 전력공급원(12), 낮은 압력의 처리(식각 또는 증착)용 챔버(13), 안테나(11)와 처리용 챔버(13)를 격리시키되 안테나(11)의 유도기전력은 통과시키는 석영창(14), 식각 또는 증착을 위한 전극(15), 안테나(11)의 임피던스 정합회로(16), 전극(15)에 바이어스를 인가하기 위한 라디오 주파수 전력공급원(17), 그 안테나(11)에 대한 라디오 주파수 차폐막(18), 그리고 안테나(11)의 평면과 수직을 이루는 외부자장 발생용의 2쌍의 전자석(19)을 포함하는 본 발명의 외부자장이 가해지는 평면형 고주파 유도결합 플라즈마 처리장치를 제공한다.The present invention is to solve the shortcomings of the plasma processing apparatus that can not generate a high density of uniformly large plasma as the induced electromotive force does not penetrate deep into the processing chamber, the planar antenna 11 wound several times in a spiral The power supply 12 for applying power to the antenna 11, the chamber 13 for low pressure treatment (etching or deposition), the antenna 11 and the processing chamber 13 is isolated from the antenna 11 The induced electromotive force is passed through a quartz window 14, an electrode 15 for etching or deposition, an impedance matching circuit 16 of the antenna 11, and a radio frequency power supply 17 for applying a bias to the electrode 15. A planar type to which the external magnetic field of the present invention is applied, including a radio frequency shielding film 18 for the antenna 11 and two pairs of electromagnets 19 for generating an external magnetic field perpendicular to the plane of the antenna 11. High frequency inductive coupling Provide a treatment device.

Description

외부자장이 가해지는 평면형 고주파 유도결합 플라즈마 처리장치Planar High Frequency Inductively Coupled Plasma Treatment System

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제1도는 본 발명의 실시예의 평면형 고주파 유도결합 플라즈마 처리장치의 개략적인 구성을 보여주는 도면.1 is a view showing a schematic configuration of a planar high frequency inductively coupled plasma processing apparatus of an embodiment of the present invention.

Claims (2)

나선형으로 수회 감겨진 평면형 안테나(11), 상기 안테나(l1)에 전력을 인가하는 전력공급원(12), 낮은 압력의 처리(시각 또는 증착)용 챔버(13), 상기 안테나(11)와 처리용 챔버(13)를 격리시키되 상기 안테나(11)의 유도기전력은 통과시키는 석영창(14), 상기 처리용 챔버(13)내에서의 식각 또는 증착을 위한 전극(15), 상기 안테나(11)의 임피던스 정합회로(16), 상기 전극(15)에 바이어스를 인가하기 위한 라디오 주파수 전력공급원(17), 상기 안테나(1])의 평면과 수직을 이루는 의부자장발생용의 적어도 2쌍의 전자석(19)을 포함하는 것을 특징으로 하는, 외부자장이 가해지는 평면형 고주파 유도결합 플라즈마 발생장치.Helically wound planar antenna 11, power source 12 for applying power to the antenna 11, chamber 13 for low pressure treatment (visual or deposition), and for processing with the antenna 11 A quartz window 14 which isolates the chamber 13 but passes the induced electromotive force of the antenna 11, an electrode 15 for etching or deposition in the processing chamber 13, and the antenna 11. At least two pairs of electromagnets 19 for generating a false magnetic field perpendicular to the plane of the impedance matching circuit 16, the radio frequency power supply 17 for applying a bias to the electrode 15, and the plane of the antenna 1. A planar high frequency inductively coupled plasma generator is applied to the external magnetic field, characterized in that it comprises a). 제1항에 있어서, 상기 전자석(19)이 자장의 방향이 상기 처리용 챔버(13)의 벽과 평행을 이루는 것을 특징으로 하는, 외부자장이 가해지는 평면형 고주파 유도결합 플라즈마 발생장치.2. The planar high frequency inductively coupled plasma generator according to claim 1, wherein the direction of the magnetic field is parallel to the wall of the processing chamber (13).
KR1019950035711A 1995-10-13 1995-10-13 Planar type high frequency induction coupled plasma processing apparatus with external magnetic field KR0178847B1 (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950035711A KR0178847B1 (en) 1995-10-13 1995-10-13 Planar type high frequency induction coupled plasma processing apparatus with external magnetic field

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950035711A KR0178847B1 (en) 1995-10-13 1995-10-13 Planar type high frequency induction coupled plasma processing apparatus with external magnetic field

Publications (2)

Publication Number Publication Date
KR970025296A true KR970025296A (en) 1997-05-30
KR0178847B1 KR0178847B1 (en) 1999-05-15

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KR1019950035711A KR0178847B1 (en) 1995-10-13 1995-10-13 Planar type high frequency induction coupled plasma processing apparatus with external magnetic field

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Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100318690B1 (en) * 1999-03-19 2001-12-28 염근영 Inductively coupled plasma apparatus

Families Citing this family (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR101629214B1 (en) 2013-11-29 2016-06-13 서울대학교산학협력단 Plasma processing apparatus for shaping plasma with controlling magnetic field

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100318690B1 (en) * 1999-03-19 2001-12-28 염근영 Inductively coupled plasma apparatus

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KR0178847B1 (en) 1999-05-15

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