KR970024322A - Photodiode and its manufacturing method - Google Patents

Photodiode and its manufacturing method Download PDF

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Publication number
KR970024322A
KR970024322A KR1019950035366A KR19950035366A KR970024322A KR 970024322 A KR970024322 A KR 970024322A KR 1019950035366 A KR1019950035366 A KR 1019950035366A KR 19950035366 A KR19950035366 A KR 19950035366A KR 970024322 A KR970024322 A KR 970024322A
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South Korea
Prior art keywords
ingaas
pattern
photodiode
inp
layer
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KR1019950035366A
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Korean (ko)
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김앙서
김남준
이재혁
신영근
김돈수
이상용
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김주용
현대전자산업 주식회사
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Priority to KR1019950035366A priority Critical patent/KR970024322A/en
Publication of KR970024322A publication Critical patent/KR970024322A/en

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Abstract

본 발명은 광 통신용 포토다이오드 및 그 제조방법에 관한 것으로, 특히 포토다이오드에 낮은 접촉저항을 갖도록 Zn 이 확산될 U-InP 윈도우층 상부에 U-InGaAs 보호층을 선택적으로 성장시키고 Zn을 확산 시킨후 p+-InP 보다 접촉 저항이 낮은 P+-InGaAs 위에 금속패턴을 형성하는 포토다이오드 및 그 제조방법이다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a photodiode for optical communication and a method for manufacturing the same. In particular, after the U-InGaAs protective layer is selectively grown on the U-InP window layer to which Zn is diffused to have a low contact resistance, the Zn diffuses therein A photodiode for forming a metal pattern on P + -InGaAs having a lower contact resistance than p + -InP and a method of manufacturing the same.

Description

포토 다이오드 및 그 제조방법Photodiode and its manufacturing method

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제 2A 도 내지 제 2E 도는 본 발명에 의해 포토 다이오드를 제조하는 단계를 도시한 단면도.2A through 2E are cross-sectional views illustrating steps of manufacturing a photodiode according to the present invention.

Claims (9)

포토다이오드 제조방법에 있어서, n+ - InP 기판상부에 n+ - InP 버퍼층, U-InGaAs 수광층, U-InP 윈도우층 및 U-InGaAs 보호층을 적층하는 단계와, 상기 딘-InGaAs 보호층 상부에 감광막패턴을 형성하고, 노출된 U-InGaAs 보호층을 식각하여 U-InGaAs 보호층 패턴을 형성하는 단계와, 상기 U-InP 윈도우층 상부에 Zn이 확산될 지역에만 노출되는 Zn 확산 방지 마스크용 산화막패턴을 형성한 단계와, 노출된 상기 U-InP 윈도우층으로 Zn을 확산시켜서 P형 도핑 영역을 형성하는 단계와, 상기 U-InGaAs 보호층 패턴 상부에 접촉 저항 금속 패턴을 형성하는 단계를 포함하는 포토다이오드 제조방법.A photodiode manufacturing method, comprising: laminating an n +-InP buffer layer, a U-InGaAs light receiving layer, a U-InP window layer, and a U-InGaAs protective layer on an n +-InP substrate, and a photoresist film on the din-InGaAs protective layer. Forming a pattern, etching the exposed U-InGaAs protective layer to form a U-InGaAs protective layer pattern, and forming an oxide film pattern for a Zn diffusion barrier mask exposed only to a region where Zn is to be diffused on the U-InP window layer Forming a P-type doped region by diffusing Zn into the exposed U-InP window layer, and forming a contact resistance metal pattern on the U-InGaAs protective layer pattern. Diode manufacturing method. 제1항에 있어서, 상기 접촉 금속 패턴은 Au/Pt/Au 적층패턴으로 형성하는 것을 특징으로 하는 포토다이오드 제조방법.The method of claim 1, wherein the contact metal pattern is formed of an Au / Pt / Au layered pattern. 제1항에 있어서, 상기 포토다이오드는 PiN 포토다이오드와 APD를 포함하는 것을 특징으로 하는 포토다이오드 제조방법.The method of claim 1, wherein the photodiode comprises a PiN photodiode and an APD. 제1항에 있어서, 상기 Zn 대신에 Cd를 확산 시키는 것을 특징으로 하는 포토다이오드 제조방법.The method of claim 1, wherein Cd is diffused instead of Zn. 제1항에 있어서, 상기 P형 도핑 영역은 p+ -InGaAs 또는 p+ - InP 인 것을 특징으로 하는 포토다이오드 제조방법.The method of claim 1, wherein the P-type doped region is p + -InGaAs or p + -InP. 포토 다이오드에 있어서, n+ - InP 기판상부에 n+ - InP 버퍼층, U-InGaAs 수광층 및 U-InP 윈도우층이 적층되고, 상기 U-InP 윈도우층 상부에 U-InGaAs 보호층 패턴이 형성되고, 상기 U-InGaAs 보호층 패턴의 주변의 하부에 있는 U-InP 윈도우층의 일정부분에 P형 도핑 영역이 형성되고, 상기 U-InGaAs 보호층 패턴 상부에 접촉 저항 금속 패턴이 구비되는 것을 특징으로 하는 포토 다이오드.In the photodiode, an n +-InP buffer layer, a U-InGaAs light receiving layer, and a U-InP window layer are stacked on an n +-InP substrate, and a U-InGaAs protective layer pattern is formed on the U-InP window layer. A P-type doped region is formed in a portion of the U-InP window layer below the periphery of the U-InGaAs protective layer pattern, and a contact resistance metal pattern is provided on the U-InGaAs protective layer pattern. diode. 제6항에 있어서, 상기 접촉 금속 패턴은 Au/Pt/Au 패턴인 것을 특징으로 하는 포토다이오드.The photodiode of claim 6, wherein the contact metal pattern is an Au / Pt / Au pattern. 제6항에 있어서, 상기 포토다이오드는 PiN 포토다이오드와 APD를 포함하는 것을 특징으로 하는 포토다이오드.The photodiode of claim 6, wherein the photodiode comprises a PiN photodiode and an APD. 제6항에 있어서, 상기 P형 도핑 영역은 p+ - InGaAs 또는 p+ - InP인 것을 특징으로 하는 포토다이오드.7. The photodiode of claim 6, wherein the p-type doped region is p +-InGaAs or p +-InP. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950035366A 1995-10-13 1995-10-13 Photodiode and its manufacturing method KR970024322A (en)

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KR1019950035366A KR970024322A (en) 1995-10-13 1995-10-13 Photodiode and its manufacturing method

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Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464367B1 (en) * 2002-01-08 2005-01-03 삼성전자주식회사 Photodiode detector and fabrication method thereof
KR100516594B1 (en) * 2002-07-27 2005-09-22 삼성전자주식회사 Photo-diode and method for fabricating thereof

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100464367B1 (en) * 2002-01-08 2005-01-03 삼성전자주식회사 Photodiode detector and fabrication method thereof
KR100516594B1 (en) * 2002-07-27 2005-09-22 삼성전자주식회사 Photo-diode and method for fabricating thereof

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