KR970024181A - Capacitor and resistor formation method of semiconductor device - Google Patents

Capacitor and resistor formation method of semiconductor device Download PDF

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Publication number
KR970024181A
KR970024181A KR1019950034927A KR19950034927A KR970024181A KR 970024181 A KR970024181 A KR 970024181A KR 1019950034927 A KR1019950034927 A KR 1019950034927A KR 19950034927 A KR19950034927 A KR 19950034927A KR 970024181 A KR970024181 A KR 970024181A
Authority
KR
South Korea
Prior art keywords
capacitor
semiconductor device
resistor
formation method
resistor formation
Prior art date
Application number
KR1019950034927A
Other languages
Korean (ko)
Inventor
양원석
최창식
황창규
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
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Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950034927A priority Critical patent/KR970024181A/en
Publication of KR970024181A publication Critical patent/KR970024181A/en

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Abstract

반도체소자의 캐패시터 및 레지스터 형성방법에 대해 기재되어 있다. 이는, 셀 어래이 내에 형성된 메모리 셀과 동일한 구조의 셀을 주변회로 영역에 형성하여, 시간 지연용 커패시터 및 레지스터로 이용하는 것을 특징으로 한다. 따라서, 종래의 캐패시터보다 약 3∼5배 이상의 면적을 줄일 수 있을 뿐만 아니라, 차세대 대응에도 매우 적합한 구조를 갖는다.A method of forming a capacitor and a resistor of a semiconductor device is described. This is characterized in that a cell having the same structure as the memory cell formed in the cell array is formed in the peripheral circuit area and used as a time delay capacitor and a resistor. Therefore, the area can be reduced by about 3 to 5 times or more than the conventional capacitor, and has a structure that is very suitable for the next generation.

Description

반도체소자의 커패시터 및 레지스터 형성방법Capacitor and resistor formation method of semiconductor device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음As this is a public information case, the full text was not included.

제2A도 내지 제2C도는 본 발명에 의한 커패시터 및 레지스터 형성방법을 설명하기 위해 도시한 레이아웃도들이다.2A to 2C are layout views illustrating a method of forming a capacitor and a resistor according to the present invention.

Claims (1)

셀 어래이 내에 형성된 메모리 셀과 동일한 구조의 셀을 주변회로 영역에 형성하여, 시간 지연용 커패시터 및 레지스터로 이용하는 것을 특징으로 하는 반도체소자의 커패시터 및 레지스터 형성방법.A method of forming a capacitor and a resistor of a semiconductor device, comprising forming a cell having the same structure as a memory cell formed in a cell array in a peripheral circuit region, and using the same as a time delay capacitor and a resistor. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950034927A 1995-10-11 1995-10-11 Capacitor and resistor formation method of semiconductor device KR970024181A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950034927A KR970024181A (en) 1995-10-11 1995-10-11 Capacitor and resistor formation method of semiconductor device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950034927A KR970024181A (en) 1995-10-11 1995-10-11 Capacitor and resistor formation method of semiconductor device

Publications (1)

Publication Number Publication Date
KR970024181A true KR970024181A (en) 1997-05-30

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ID=66582538

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950034927A KR970024181A (en) 1995-10-11 1995-10-11 Capacitor and resistor formation method of semiconductor device

Country Status (1)

Country Link
KR (1) KR970024181A (en)

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