KR970019389A - Driving Method of Interline Charge Coupled Imaging Device - Google Patents

Driving Method of Interline Charge Coupled Imaging Device Download PDF

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Publication number
KR970019389A
KR970019389A KR1019950031087A KR19950031087A KR970019389A KR 970019389 A KR970019389 A KR 970019389A KR 1019950031087 A KR1019950031087 A KR 1019950031087A KR 19950031087 A KR19950031087 A KR 19950031087A KR 970019389 A KR970019389 A KR 970019389A
Authority
KR
South Korea
Prior art keywords
ccd
vertical
overflow drain
photo
imaging device
Prior art date
Application number
KR1019950031087A
Other languages
Korean (ko)
Inventor
남정현
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950031087A priority Critical patent/KR970019389A/en
Publication of KR970019389A publication Critical patent/KR970019389A/en

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Classifications

    • H—ELECTRICITY
    • H04—ELECTRIC COMMUNICATION TECHNIQUE
    • H04N—PICTORIAL COMMUNICATION, e.g. TELEVISION
    • H04N25/00—Circuitry of solid-state image sensors [SSIS]; Control thereof
    • H04N25/70—SSIS architectures; Circuits associated therewith
    • H04N25/71—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors
    • H04N25/73—Charge-coupled device [CCD] sensors; Charge-transfer registers specially adapted for CCD sensors using interline transfer [IT]

Abstract

본 발명은 인터라인 CCD형(IT-CCD)영상소자의 필드 전달게이트펄스의 높이를 줄이기 위한 반도체 영상소자의 구동 방법에 관한 것으로서 광전하축적부의 신호전하를 수직-CCD로 전달할 때에 반도체 기판에 펄스를 인가하여 수직 오버플로우 드레인용 장벽을 낮추는 단계; 상기 수직 오버플로우 드레인용 장벽을 낮추는 단계에 따라 광전하축적부의 전위우물 깊이를 얕게함으로써 수직-CCD하부의 전위우물과 광전하축적부의 전위단차를 크게하여 광전하축적부의 완전 공핍을 위한 수직-CCD의 펄스 높이를 줄이는 단계를 포함한다.BACKGROUND OF THE INVENTION 1. Field of the Invention The present invention relates to a method of driving a semiconductor imaging device for reducing the height of a field transfer gate pulse of an interline CCD (IT-CCD) imaging device. Applying a lowering barrier for vertical overflow drain; According to the step of lowering the vertical overflow drain barrier, the depth of the potential well of the photo-charge accumulator portion is made shallower to increase the potential difference of the potential well of the vertical-CCD lower part and the photo-charge accumulator portion. Reducing the pulse height.

따라서 상술한 바와 같이 본 발명에 의한 수직 오버플로우 드레인에 필드 리드-아웃시간 동안 네가티브펄스를 인가함으로써, 수직-CCD쪽으로의 전하 전달을 용이하게 하여 광전하축적부의 완전공핍을 위하여 필요한 필드 리드아웃 펄스의 높이를 줄여서 전체적으로 높은 전압의 인가없이 IT-CCD형 영상소자의 구동이 가능하게 되는 효과를 갖는다.Therefore, as described above, by applying a negative pulse during the field lead-out time to the vertical overflow drain according to the present invention, the field lead-out pulse necessary for the complete depletion of the photocharge accumulation part by facilitating charge transfer to the vertical-CCD. It is possible to drive the IT-CCD type image device without applying a high voltage as a whole by reducing the height of.

Description

인터라인 전하 결합형 영상 소자의 구동방법Driving Method of Interline Charge Coupled Imaging Device

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제2도는 본 발명에 따른 IT-CCD형 영상소자의 단위화소의 수직단면도이다.2 is a vertical sectional view of a unit pixel of an IT-CCD type image device according to the present invention.

Claims (1)

수직 오버플로우 드레인과 전자 셔터 동작이 가능한 IT-CCD형 영상소자를 구동하는 방법에 있어서, 광전하축적부의 신호전하를 수직-CCD로 전달할 때에 반도체 기판에 펄스를 인가하여 수직 오버플로우 드레인용 장벽을 낮추는 단계; 상기 수직 오버플로우 드레인용 장벽을 낮추는 단계에 따라 광전하축적부의 전위우물 깊이를 얕게 함으로써 수직-CCD하부의 전위우물과 광전하축적부의 전위단차를 크게하여 광전하측적부의 완전공핍을 위한 수직-CCD의 펄스 높이를 줄이는 단계를 포함하는 것을 특징으로 하는 IT-CCD형 영상소자 구동 방법.In a method of driving an IT-CCD type image device capable of vertical overflow drain and electronic shutter operation, a pulse is applied to a semiconductor substrate when a signal charge of a photocharge accumulator is transferred to a vertical CCD to prevent a barrier for vertical overflow drain. Lowering; According to the step of lowering the vertical overflow drain barrier, the depth of the potential well of the photo-charge accumulating portion is made shallow, thereby increasing the potential difference of the potential well of the vertical-CCD lower portion and the photo-charge accumulating portion, thereby increasing vertical potential of the photo-charge accumulating portion. IT-CCD type image device driving method comprising the step of reducing the pulse height of the. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950031087A 1995-09-21 1995-09-21 Driving Method of Interline Charge Coupled Imaging Device KR970019389A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950031087A KR970019389A (en) 1995-09-21 1995-09-21 Driving Method of Interline Charge Coupled Imaging Device

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950031087A KR970019389A (en) 1995-09-21 1995-09-21 Driving Method of Interline Charge Coupled Imaging Device

Publications (1)

Publication Number Publication Date
KR970019389A true KR970019389A (en) 1997-04-30

Family

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Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950031087A KR970019389A (en) 1995-09-21 1995-09-21 Driving Method of Interline Charge Coupled Imaging Device

Country Status (1)

Country Link
KR (1) KR970019389A (en)

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