KR970017999A - Sputtering device with improved collimator - Google Patents

Sputtering device with improved collimator Download PDF

Info

Publication number
KR970017999A
KR970017999A KR1019950032999A KR19950032999A KR970017999A KR 970017999 A KR970017999 A KR 970017999A KR 1019950032999 A KR1019950032999 A KR 1019950032999A KR 19950032999 A KR19950032999 A KR 19950032999A KR 970017999 A KR970017999 A KR 970017999A
Authority
KR
South Korea
Prior art keywords
collimator
sputtering apparatus
wafer
heated
sputtered particles
Prior art date
Application number
KR1019950032999A
Other languages
Korean (ko)
Inventor
정우상
최길현
박지순
김병준
Original Assignee
김광호
삼성전자 주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 김광호, 삼성전자 주식회사 filed Critical 김광호
Priority to KR1019950032999A priority Critical patent/KR970017999A/en
Publication of KR970017999A publication Critical patent/KR970017999A/en

Links

Landscapes

  • Physical Vapour Deposition (AREA)
  • Physical Deposition Of Substances That Are Components Of Semiconductor Devices (AREA)
  • Electrodes Of Semiconductors (AREA)

Abstract

스퍼터된 입자가 증착되는 것을 방지하는 구조를 갖는 콜리메이터를 구비하는 스퍼터장치가 개시된다.Disclosed is a sputtering apparatus having a collimator having a structure for preventing the sputtered particles from being deposited.

본 발명에 따른 스퍼터링장치는 챔버, 웨이퍼를 지지하는 지지대, 스퍼터소스, 상기 스퍼터소스로부터 스퍼터링된 입자의 직선성을 향상시켜 상기 웨이퍼에 투사시키기 위한 벌집모양의 콜리메이터를 갖는 스퍼터링장치에 있어서, 상기 콜리메이터는 전류도전에 의해 가열되는 가열체로 제조된 것임을 특징으로 한다.The sputtering apparatus according to the present invention is a sputtering apparatus having a chamber, a support for supporting a wafer, a sputter source, and a honeycomb collimator for projecting onto the wafer by improving the linearity of the sputtered particles from the sputter source. Is characterized in that it is made of a heating body heated by current conduction.

본 발명에 따른 스퍼터링장치에서는 콜리메이터에 증착되는 알루미늄이 다시 기화되거나 증착속도가 감소되어 웨이퍼에 증착되는 알루미늄이 감소되는 것을 방지하는 효과가 있다.The sputtering apparatus according to the present invention has the effect of preventing the aluminum deposited on the collimator is vaporized again or the deposition rate is reduced to reduce the aluminum deposited on the wafer.

Description

개선된 구조의 콜리메이터를 갖는 스퍼터링장치Sputtering device with improved collimator

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제6도는 본 발명의 스퍼터링장치에 사용된 콜리에메터를 위에서 본 구조를 보이는 도면이다.6 is a view showing the structure of the collimator used in the sputtering apparatus of the present invention seen from above.

Claims (4)

챔버, 웨이퍼를 지지하는 지지대, 스퍼터소스, 상기 스퍼터소스로부터 스퍼터링된 입자의 직선성을 향상시켜 상기 웨이퍼에 투사시키기 위한 벌집모양의 콜리메이터를 갖는 스퍼터링장치에 있어서, 상기 콜리메이터는 전류도전에 의해 가열되는 가열체로 제조된 것이며, 전기전도에 의해 가열되는 것임을 특징으로 하는 스퍼터링 장치.A sputtering apparatus having a chamber, a support for supporting a wafer, a sputter source, and a honeycomb collimator for projecting onto the wafer by improving the linearity of sputtered particles from the sputter source, wherein the collimator is heated by current conduction. A sputtering apparatus, which is made of a heating body and is heated by electric conduction. 제1항에 있어서, 상기 콜리메이터의 측벽은 스퍼터링된 입자가 유입되는 입구측이 얇고 출구측이 두꺼운 것임을 특징으로 하는 스퍼터링장치.The sputtering apparatus according to claim 1, wherein the sidewall of the collimator has a thin inlet side and a thicker outlet side into which sputtered particles are introduced. 제1항에 있어서, 상기 콜리메이터는 전기절연이 우수한 산화물 혹은 질화물로 피복된 것임을 특징으로 하는 스퍼터링장치.The sputtering apparatus according to claim 1, wherein the collimator is coated with an oxide or nitride having excellent electrical insulation. 제1항에 있어서, 상기 콜리메이터는 소정의 기압하에서 알루미늄의 융점보다도 높고 상기 가열체의 융점보다는 낮은 온도로 가열됨을 특징으로 하는 스퍼터링장치.The sputtering apparatus according to claim 1, wherein the collimator is heated to a temperature higher than the melting point of aluminum and lower than the melting point of the heating body under a predetermined air pressure. ※ 참고사항 : 최초출원 내용에 의하여 공개하는 것임.※ Note: The disclosure is based on the initial application.
KR1019950032999A 1995-09-29 1995-09-29 Sputtering device with improved collimator KR970017999A (en)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR1019950032999A KR970017999A (en) 1995-09-29 1995-09-29 Sputtering device with improved collimator

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950032999A KR970017999A (en) 1995-09-29 1995-09-29 Sputtering device with improved collimator

Publications (1)

Publication Number Publication Date
KR970017999A true KR970017999A (en) 1997-04-30

Family

ID=66616118

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950032999A KR970017999A (en) 1995-09-29 1995-09-29 Sputtering device with improved collimator

Country Status (1)

Country Link
KR (1) KR970017999A (en)

Cited By (1)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017074633A1 (en) * 2015-10-27 2017-05-04 Applied Materials, Inc. Biasable flux optimizer/collimator for pvd sputter chamber

Cited By (4)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
WO2017074633A1 (en) * 2015-10-27 2017-05-04 Applied Materials, Inc. Biasable flux optimizer/collimator for pvd sputter chamber
US10347474B2 (en) 2015-10-27 2019-07-09 Applied Materials, Inc. Biasable flux optimizer / collimator for PVD sputter chamber
US10727033B2 (en) 2015-10-27 2020-07-28 Applied Materials, Inc. Biasable flux optimizer / collimator for PVD sputter chamber
US11309169B2 (en) 2015-10-27 2022-04-19 Applied Materials, Inc. Biasable flux optimizer / collimator for PVD sputter chamber

Similar Documents

Publication Publication Date Title
EP0738788A3 (en) Thin-Film vapor deposition apparatus
KR910007536B1 (en) High temperature heating sputtering process
FR2514033B1 (en) PLASMA REACTIVE VAPOR VAPOR THIN FILM DEPOSITION SYSTEM
US4339300A (en) Process for smoothing surfaces of crystalline materials
AU2328399A (en) Apparatus and method for depositing a semiconductor material
EP0855735A3 (en) A high temperature, high flow rate chemical vapor deposition apparatus and related methods
KR910001911A (en) Film Forming Apparatus and Method
US4690872A (en) Ceramic heater
US6083360A (en) Supplemental heating of deposition tooling shields
JPH11350048A (en) Elliptical ceramic evaporator
WO2003079420A8 (en) Evaporation source for deposition process and insulation fixing plate, and heating wire winding plate and method for fixing heating wire
KR970017999A (en) Sputtering device with improved collimator
JP2000273635A5 (en)
TW243470B (en) Film layer forming device and method for forming a film layer
TW367543B (en) Reactive PVD with NEG pump
DE69332355D1 (en) METHOD AND DEVICE FOR VACUUM COATING
JPH06158301A (en) Sputtering device
JPS5963699A (en) Film forming device
JPS6429815A (en) Optical switching element
EP0846785A3 (en) A method of metalizing ceramic members
JP2753654B2 (en) Moisture sensitive element
JPS6353262B2 (en)
JPH01242778A (en) Device for heating substrate
JPH0666297B2 (en) Decompression device and its insulating container
JPH02185965A (en) Vacuum thin film forming device

Legal Events

Date Code Title Description
WITN Withdrawal due to no request for examination