KR970016751A

KR970016751A - How to form a mask pattern

Info

Publication number: KR970016751A
Application number: KR1019950028823A
Authority: KR
Inventors: 윤용혁
Original assignee: 김주용; 현대전자산업 주식회사
Priority date: 1995-09-04
Filing date: 1995-09-04
Publication date: 1997-04-28

Abstract

본 발명은 종래의 다층 감광막 기술에서 하층 감광막을 기존의 감광액을 사용하는 대신에 탄소 성분의 아몰퍼스 카본막을 사용하여 미세 마스크 패턴을 형성하는 기술에 관한 것으로, 식각마스크는 물론 이온주입 마스크 등에 적용 가능하며, 아몰퍼스 카본막을 하층 감광막으로 사용하면 패턴을 형성하려는 하부 물질과의 식각선택비가 크게 증가하여, 상대적으로 종래 기술에서 사용하던 하층 감광막보다 두께를 낮출 T 있어 0.25㎛ 이하의 미세 패턴을 형성하는 데 장점이 있다.The present invention relates to a technique of forming a fine mask pattern using an amorphous carbon film of a carbon component instead of using a conventional photoresist for a lower photoresist in the conventional multilayer photoresist technology, and is applicable to an etching mask as well as an ion implantation mask. When the amorphous carbon film is used as the lower photoresist film, the etching selectivity with the lower material to form the pattern is greatly increased, which is relatively lower in thickness than the lower photoresist film used in the prior art, thereby forming a fine pattern of 0.25 μm or less. There is this.

Description

How to form a mask pattern

본 내용은 요부공개 건이므로 전문내용을 수록하지 않았음Since this is an open matter, no full text was included.

제 1c도는 본 발명의 일실시예에 따른 미세패턴 형성 공정도.Figure 1c is a micropattern forming process according to an embodiment of the present invention.

Claims

In the mask pattern formation method at the time of semiconductor element manufacture; Stacking an amorphous carbon film, an insulating film, and a photosensitive film on top of the mask film; Patterning the photosensitive film by a photolithography process; Patterning the insulating film using the patterned photoresist as an etch barrier; Removing the patterned photoresist and patterning the amorphous amorphous carbon film using the patterned insulating film as an etch barrier; And removing the patterned insulating film.

The method of claim 1; The patterned amorphous carbon film is a mask pattern forming method, characterized in that the etching mask of the mask film.

The method of claim 1; The patterned amorphous carbon film is a mask pattern forming method, characterized in that the ion implantation mask of the mask film.

In the mask pattern formation method at the time of semiconductor element manufacture; Stacking an amorphous carbon film and a photosensitive film on top of the mask film; Patterning the photosensitive film by a photolithography process; Patterning the amorphous carbon film using the patterned photoresist as an etch barrier; And removing the patterned photoresist.

The method of claim 4; The patterned amorphous carbon film is a mask pattern forming method, characterized in that the etching mask of the mask film.

The method of claim 4; The patterned amorphous carbon film is a mask pattern forming method, characterized in that the ion implantation mask of the mask film.

※ Note: The disclosure is based on the initial application.