KR970011228U - 고체촬상소자 - Google Patents

고체촬상소자

Info

Publication number
KR970011228U
KR970011228U KR2019950020076U KR19950020076U KR970011228U KR 970011228 U KR970011228 U KR 970011228U KR 2019950020076 U KR2019950020076 U KR 2019950020076U KR 19950020076 U KR19950020076 U KR 19950020076U KR 970011228 U KR970011228 U KR 970011228U
Authority
KR
South Korea
Prior art keywords
imaging device
solid state
state imaging
solid
state
Prior art date
Application number
KR2019950020076U
Other languages
English (en)
Other versions
KR0134811Y1 (ko
Inventor
윤성혁
Original Assignee
엘지반도체주식회사
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed by 엘지반도체주식회사 filed Critical 엘지반도체주식회사
Priority to KR2019950020076U priority Critical patent/KR0134811Y1/ko
Publication of KR970011228U publication Critical patent/KR970011228U/ko
Application granted granted Critical
Publication of KR0134811Y1 publication Critical patent/KR0134811Y1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/148Charge coupled imagers
    • H01L27/14806Structural or functional details thereof
    • H01L27/14812Special geometry or disposition of pixel-elements, address lines or gate-electrodes
    • H01L27/14818Optical shielding

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Transforming Light Signals Into Electric Signals (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR2019950020076U 1995-08-03 1995-08-03 고체촬상소자 KR0134811Y1 (ko)

Priority Applications (1)

Application Number Priority Date Filing Date Title
KR2019950020076U KR0134811Y1 (ko) 1995-08-03 1995-08-03 고체촬상소자

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR2019950020076U KR0134811Y1 (ko) 1995-08-03 1995-08-03 고체촬상소자

Publications (2)

Publication Number Publication Date
KR970011228U true KR970011228U (ko) 1997-03-29
KR0134811Y1 KR0134811Y1 (ko) 1999-01-15

Family

ID=19420132

Family Applications (1)

Application Number Title Priority Date Filing Date
KR2019950020076U KR0134811Y1 (ko) 1995-08-03 1995-08-03 고체촬상소자

Country Status (1)

Country Link
KR (1) KR0134811Y1 (ko)

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100399938B1 (ko) * 2001-11-19 2003-09-29 주식회사 하이닉스반도체 암전류를 측정하기 위한 이미지센서
KR100592448B1 (ko) * 1997-06-03 2006-08-30 소니 가부시끼 가이샤 고체 촬상 디바이스 구동 방법 및 측정 방법

Cited By (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
KR100592448B1 (ko) * 1997-06-03 2006-08-30 소니 가부시끼 가이샤 고체 촬상 디바이스 구동 방법 및 측정 방법
KR100399938B1 (ko) * 2001-11-19 2003-09-29 주식회사 하이닉스반도체 암전류를 측정하기 위한 이미지센서

Also Published As

Publication number Publication date
KR0134811Y1 (ko) 1999-01-15

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Legal Events

Date Code Title Description
A201 Request for examination
E902 Notification of reason for refusal
E701 Decision to grant or registration of patent right
REGI Registration of establishment
FPAY Annual fee payment

Payment date: 20050923

Year of fee payment: 8

LAPS Lapse due to unpaid annual fee