KR970004047A - 고체촬상소자 - Google Patents

고체촬상소자 Download PDF

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Publication number
KR970004047A
KR970004047A KR1019950016930A KR19950016930A KR970004047A KR 970004047 A KR970004047 A KR 970004047A KR 1019950016930 A KR1019950016930 A KR 1019950016930A KR 19950016930 A KR19950016930 A KR 19950016930A KR 970004047 A KR970004047 A KR 970004047A
Authority
KR
South Korea
Prior art keywords
imaging device
solid state
state imaging
solid
state
Prior art date
Application number
KR1019950016930A
Other languages
English (en)
Other versions
KR0151266B1 (ko
Priority date (The priority date is an assumption and is not a legal conclusion. Google has not performed a legal analysis and makes no representation as to the accuracy of the date listed.)
Filing date
Publication date
Application filed filed Critical
Priority to KR1019950016930A priority Critical patent/KR0151266B1/ko
Priority to US08/507,205 priority patent/US5661317A/en
Publication of KR970004047A publication Critical patent/KR970004047A/ko
Application granted granted Critical
Publication of KR0151266B1 publication Critical patent/KR0151266B1/ko

Links

Classifications

    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • HELECTRICITY
    • H01ELECTRIC ELEMENTS
    • H01LSEMICONDUCTOR DEVICES NOT COVERED BY CLASS H10
    • H01L27/00Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate
    • H01L27/14Devices consisting of a plurality of semiconductor or other solid-state components formed in or on a common substrate including semiconductor components sensitive to infrared radiation, light, electromagnetic radiation of shorter wavelength or corpuscular radiation and specially adapted either for the conversion of the energy of such radiation into electrical energy or for the control of electrical energy by such radiation
    • H01L27/144Devices controlled by radiation
    • H01L27/146Imager structures
    • H01L27/14643Photodiode arrays; MOS imagers

Landscapes

  • Physics & Mathematics (AREA)
  • Engineering & Computer Science (AREA)
  • Power Engineering (AREA)
  • Electromagnetism (AREA)
  • Condensed Matter Physics & Semiconductors (AREA)
  • General Physics & Mathematics (AREA)
  • Computer Hardware Design (AREA)
  • Microelectronics & Electronic Packaging (AREA)
  • Solid State Image Pick-Up Elements (AREA)
KR1019950016930A 1995-06-22 1995-06-22 고체촬상소자 KR0151266B1 (ko)

Priority Applications (2)

Application Number Priority Date Filing Date Title
KR1019950016930A KR0151266B1 (ko) 1995-06-22 1995-06-22 고체촬상소자
US08/507,205 US5661317A (en) 1995-06-22 1995-07-26 Solid state image sensor

Applications Claiming Priority (1)

Application Number Priority Date Filing Date Title
KR1019950016930A KR0151266B1 (ko) 1995-06-22 1995-06-22 고체촬상소자

Publications (2)

Publication Number Publication Date
KR970004047A true KR970004047A (ko) 1997-01-29
KR0151266B1 KR0151266B1 (ko) 1998-10-01

Family

ID=19417920

Family Applications (1)

Application Number Title Priority Date Filing Date
KR1019950016930A KR0151266B1 (ko) 1995-06-22 1995-06-22 고체촬상소자

Country Status (2)

Country Link
US (1) US5661317A (ko)
KR (1) KR0151266B1 (ko)

Families Citing this family (7)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
DE19533061C2 (de) * 1995-09-07 1997-07-03 Leica Ag Photoelektrische Halbleiter-Lichterfassungseinrichtung mit programmierbarem Offset-Strom und Bildsensor mit einer solchen Einrichtung
KR100209758B1 (ko) 1996-06-26 1999-07-15 구본준 고체 촬상 소자 및 그의 제조 방법
US6072204A (en) * 1997-06-23 2000-06-06 Scientific Imaging Technologies, Inc. Thinned CCD
JP4725049B2 (ja) * 2004-07-29 2011-07-13 ソニー株式会社 固体撮像装置およびその製造方法
JP4710305B2 (ja) * 2004-11-15 2011-06-29 ソニー株式会社 固体撮像素子
JP4680655B2 (ja) * 2005-04-01 2011-05-11 パナソニック株式会社 固体撮像装置及びその製造方法
US9726841B1 (en) * 2016-07-12 2017-08-08 Inphi Corporation Integrated photo detector, method of making the same

Family Cites Families (2)

* Cited by examiner, † Cited by third party
Publication number Priority date Publication date Assignee Title
US5210433A (en) * 1990-02-26 1993-05-11 Kabushiki Kaisha Toshiba Solid-state CCD imaging device with transfer gap voltage controller
JPH06268192A (ja) * 1993-03-12 1994-09-22 Toshiba Corp 固体撮像装置

Also Published As

Publication number Publication date
KR0151266B1 (ko) 1998-10-01
US5661317A (en) 1997-08-26

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Legal Events

Date Code Title Description
A201 Request for examination
E701 Decision to grant or registration of patent right
GRNT Written decision to grant
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Year of fee payment: 8

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